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Features
Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation
TO-220AB/5
5
5 1 Straight leads
1 5
Standard
SMD
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads Most suitable for inductive loads Replaces electromechanical relays, fuses and discrete circuits
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Overvoltage protection
Current limit
Gate protection
OUT
IN
Temperature sensor
ESD
Logic
Load
ST
PROFET
Load GND
1
Signal GND
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load.
Semiconductor Group
1 of 15
2003-Oct-01
BTS 410 F2
Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V 3) RI = 2 , RL= 6.6 , td= 400 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 1.8 A, ZL = 2.3 H, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Symbol Vbb VLoad dump4) IL Tj Tstg Ptot EAS VESD VIN IIN IST
Values 65 100 self-limited -40 ...+150 -55 ...+150 50 4.5 1 2 -0.5 ... +6 5.0 5.0
Unit V V A C W J kV V mA
Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min ---Values typ max -2.5 -75 35 -Unit K/W
chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5):
3) 4) 5
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.
Semiconductor Group
2003-Oct-01
Symbol
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.6 A Tj=25 C: RON -190 390 IL(ISO) IL(GNDhigh) 1.6 -1.8 -220 440 -1 A mA s m
Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Operating Parameters Operating voltage 6) Undervoltage shutdown
12 5 ---
-----
125 85 3 6
V/s V/s
Tj =-40...+150C: Tj =25C: Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page 13 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: 7) Overvoltage protection Tj =-40...+150C: Ibb=4 mA Standby current (pin 3) Tj=-40...+25C: VIN=0 Tj= 150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND
V V V V V V V V V A A mA
) )
7) 8
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
2003-Oct-01
BTS 410 F2
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Unit
Protection Functions9) Initial peak short circuit current limit (pin 3 to 5)10), IL(SCp) ( max 450 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Overload shutdown current limit IL(SCr) VON= 8 V, Tj = Tjt (see timing diagrams, page 11) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC)
min value valid only, if input "low" time exceeds 60 s
11 10 7.5 -450
A s V V C K V
Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: IL= 1 A, Tj =-40..+150C: Short circuit shutdown detection voltage(pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 11) Diagnostic Characteristics Open load detection current
(on-condition)
61 --150 ---
68 -8.5 -10 --
73 75 ---32
mA
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as outside normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Short circuit current limit for max. duration of td(SC) max=450 s, prior to shutdown 11) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).
Semiconductor Group
2003-Oct-01
BTS 410 F2
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Unit
Input and Status Feedback12) Input turn-on threshold voltage Tj =-40..+150 VIN(T+) Input turn-off threshold voltage Tj =-40..+150 VIN(T-) Input threshold hysteresis VIN(T) Off state input current (pin 2), VIN = 0.4 V IIN(off) On state input current (pin 2), VIN = 5 V IIN(on) td(ST SC) Status invalid after positive input slope (short circuit) Tj=-40 ... +150C: Status invalid after positive input slope td(ST) (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +50 uA: VST(high) ST low voltage Tj =-40...+150C, IST = +1.6 mA: VST(low)
V V V A A s s
5.0 --
6 --
-0.4
12)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
2003-Oct-01
Status 412 B2 H H L H H L L H L L L15) L15) L L 410 D2 H H H L H L H 14 H (L )) L L 15 L ) 15) L L L 410 E2/F2 H H H L H L H H (L14)) L L H H H H 410 G2 H H H L H H H H (L14)) L L H H H H 410 H2 H H L H H L L H L L H H H H
H L L H H L L L L L L
X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
Terms
Ibb I IN 2 I ST V V bb IN V ST 4 ST GND 1 R GND IGND V OUT IN 3 Vbb IL PROFET OUT 5 VON
ZDI1 6 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 14) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection 15) No current sink capability during undervoltage shutdown
13
Semiconductor Group
2003-Oct-01
BTS 410 F2
Overvolt. and reverse batt. protection Status output
+5V
R IN
IN V Z2 + V bb
R ST(ON)
ST
R ST
ST V
Logic
GND
ESDZD
Z1
PROFET
GND
ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
R GND
Signal GND
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN high
+ V bb
V ON
ON
VON
OUT
Logic unit
OUT
Logic unit
GND disconnect
Z
VON
OUT GND
PROFET
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.
Semiconductor Group
2003-Oct-01
BTS 410 F2
GND disconnect with GND pull up
3 IN Vbb PROFET 4 ST GND 1 V V bb V IN ST V OUT
IN
ST GND
GND
ZL
L RL
ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
Energy stored in load inductance: EL = 1/2LI L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)iL(t) dt,
2
with an approximate solution for RL > 0 : EAS= IL L ILRL (V + |VOUT(CL)|) ln (1+ ) |VOUT(CL)| 2RL bb
bb
1000
bb
If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.
Semiconductor Group
2003-Oct-01
BTS 410 F2
Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T ZthJC [K/W] 10
0.1
0.01 1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1 tp [s]
Semiconductor Group
2003-Oct-01
Overtemperature protection with hysteresis Tj >150 C, latch function16)17) Tj >150 C, with auto-restart on cooling Short circuit to GND protection
switches off when VON>3.5 V typ. and Vbb> 7 V typ16) (when first turned on after approx. 150 s) switches off when VON>8.5 V typ.16) (when first turned on after approx. 150 s) Achieved through overtemperature protection
X X
X X
X X
X X X X X X X X X X X X X X X X X X X X X X -19) X X X X X X X X X X X X X X 19)
Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart )
18
X -
) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V OUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 17) With latch function. Reseted by a) Input low, b) Undervoltage 18) No auto restart after overvoltage in case of short circuit 19) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
Semiconductor Group
10
2003-Oct-01
BTS 410 F2
Timing diagrams
Figure 1a: Vbb turn on: IN
IN
t V bb
ST d(bb IN)
VOUT V td(SC)
OUT
A ST open drain
t t A
in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s td(SC) approx. -- s if Vbb - VOUT > 8.5 V typ.
IN
IN
t ST
*)
IL
d(ST)
I L(SCp) I L(SCr)
OUT
ST
IL I L(OL) t
Heating up may require several seconds, Vbb - VOUT < 8.5 V typ. *) if the time constant of load is too large, open-load-status may occur
Semiconductor Group
11
2003-Oct-01
BTS 410 F2
Figure 3c: Short circuit while on: Figure 5a: Open load: detection in ON-state, turn on/off to open load
IN
IN
ST
ST
t d(ST)
V V OUT
OUT
I IL **) t
**) current peak approx. 20 s
open t
Figure 5b: Open load: detection in ON-state, open load occurs in on-state
IN IN ST ST V V
OUT
t d(ST OL1)
d(ST OL2)
OUT
I T
J
normal
L
open
normal
t t
td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ
Semiconductor Group
12
2003-Oct-01
BTS 410 F2
Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN Vbb bb
V
bb(under)
V ON(CL)
Vbb(over)
V bb(o rst)
Vbb(u cp) V
bb(u rst)
V V OUT
OUT
ST ST open drain t Figure 9a: Overvoltage at short circuit shutdown: Figure 6b: Undervoltage restart of charge pump V on VON(CL) IN
Vbb
V bb(o rst)
off-state
on-state
off-state
bb(over)
bb(u rst)
IL
bb(o rst)
V V
bb(under)
bb(u cp)
ST t V bb
Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown.
Semiconductor Group
13
2003-Oct-01
BTS 410 F2
Standard TO-220AB/5
BTS 410 F2
Changed since 04.96 Date Change Mar. EAS maximum rating and diagram 1997 and ZthJC diagram added ESD capability (except Input) specified to 2kV, RthJA SMD specified IL(GND high) max reduced from 10 to 1 mA Option Overview table columns for BTS307/308 added Fig. 1a: Vout-spike at Vbb-turn-on added
Semiconductor Group
14
2003-Oct-01
BTS 410 F2
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Mnchen Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Semiconductor Group
15
2003-Oct-01