Application Note 20
Issue 1 April 1996
Magnetoresistive Sensors
Principles of Operation and Applications
Stefan Hübschmann
Matthias Schneider
This a pplication note provides an
overview of the Zetex range of
Magnetoresistive sensors.
The layout of a typical magnetoresistive
chip (parent device 174B) is shown in
Figure 1, and is for example the chip
used in the ZMY20 sensor. Thin film
stripes are a characteristic feature of a
magnetoresistive chip. These stripes are
made by photolithography and consist
of Permalloy (Ni81Fe19), a magnetic
material evaporated on an oxidised
silicon wafer. The electrical resistivity of
the stripes is changed by a magnetic
field Hy due to the magnetoresistive
effect. The field Hy causes a rotation of
Figure 1
Magnetoresistive Magnetic Field Sensor,
(Parent Device 174B).
AN20 - 1
the magnetisation in the stripe. This is
shown in Figure 2. The resistivity R of a
permalloy stripe depends on the angle
betwe en the directions of electric
current (I) and magnetisation (M):
R = Ro + ∆Ro cos2α
where ∆R0 describes the strength of the
magnetoresistive effect.
T h e m a x i m u m r e l a t iv e cha n g e o f
resistivity ∆R0/R is approximately 2 to 3%
for permalloy. The relationship between
an external field Hy and angle α is
Figure 2
The magnetoresistive effect depends on
the angle between the direction of electric
current (I) and magnetisation (M). A
rotation of the magnetisation in a
permalloy stripe takes place when a
magnetic field in the y-direction is applied.
Without an external field the
magnetisation is along the x-direction
due the shape of the stripe.

determined by the geometrical
di m e n s io ns of the s tri pe and the
magnetic anisotropy of permalloy. This
is taken into account by introducing a
f i e l d H0 t h a t r e p r e s e n t s t h e
demagnetising and anisotropic field.
One obtains
Hy2
sin2 α = for H < H0
H02
sin2 α = 1 for H > H0
The characteristic of a magnetoresistive
stripe as a field sensor is:
 Hy 2 
R = R0 + ∆R0 1− 2  for H < H0
 H0 
A linear characteristic of the
magnetoresistive sensor is required to
measure a small magnetic field. The
linear behaviour of the magnetoresistive
sensor is achieved by using a “Barber
pole” geometry. The stripes in Figure 1
are covered with aluminium bars having
an inclination of 45° to the stripe axis.
Aluminum has a low resistivity
compared to permalloy. Therefore the
Barber poles cause a change of the
current direction. The angle between
current and magnetisation is shifted by
45° as shown in Figure 3. The
relationship between resistance and
magnetic field is now
 Hy 

√1− 
2
R =Ro + ∆R0 ± ∆Ro  
H y
2 2
 Ho  H 0
A linear characteristic of the sensor is
given around Hy2/H20 = 0. The sign in this
equation is determined by the
inclination of the “Barber poles” (±45°)
AN20 - 2
Application Note 20
Issue 1 April 1996
Figure 3
Covering the stripe with “Barber poles”
consisting of aluminium changes the
direction of the current. This does not
influence the direction of magnetisation.
to the stripe axis. The characteristic of a
sensor with and without Barber poles is
presented in Figure 4.
The stripes of the magnetoresistive chip
are arranged as a meandering pattern.
They form a Wheatstone bridge which is
shown schematically in Figure 5. The
applied voltage is Vb. Each half bridge
consists of two resistors with different
“Barber pole” orientations. The voltage
between the resistors of a half bridge
changes upon application of a magnetic
field.
R bridge. The voltage difference V0 is the
R0+∆R0
with Barber poles
without Barber poles
R0
Hy
-1 -0,5 0 0,5 1 H0
Figure 4
Characteristics of magnetoresistive
sensors. The Barber pole structure
enables a linear behaviour of the sensor
for a small magnetic field.
Figure 5
Wheatstone bridge of a magnetoresistive
sensor with “Barber pole” structure. The
bridge is balanced by laser trimming.
The resistance of one resistor increases,
whilst the other resistor has a lower
resistance due to the differing field
characteristic. Adding a second half
bridge with an opposite arrangement of
“Barber poles” provides a Wheatstone
output signal of the sensor. Each half
bridge is trimmed to Vb/2 w ith an
additional resistor in order to get an
output voltage close to zero when no
external field is applied. The trimming
structures of the resistors in Figure 1
mark off the meander stripes on the left
and right side of the chips.
Operating conditions and
parameters
The shape of the stripe and the
anisotropy of permalloy only define an
ax is along the x-direction for the
magnetisation without external field Hy.
AN20 - 3
Application Note 20
Issue 1 April 1996
Figure 6
Safe operating area of ZMY20/ZMZ20.
Hxtot=Hx + Hd ; Tamb = 25°C
Hd = disturbing field.
This means that in this state the stripe
can have areas with a different direction
of magnetisation (magnetic domains)
and the sensor does not work in a stable
way. A safe operation of the sensor is
achieved by applying an auxiliary field
Hx. This field defines the direction of the
magnetisation. The range of Hy for safe
sensor operation is determined by the
strength of the auxiliary field. The safe
operating area (SOA) of the sensor is
demonstrated in Figure 6.
The field Hxtot = Hy + Hd determines the
allowed field values for Hy, where Hd is
an external disturbing field in the
x-direction.
There is no limitation for Hy in the case of
Hxtot ≥ 2.6 kA/m (ZMY20/ZMZ20). A small
permanent magnet is sufficient to create
the auxiliary field. The magnet can be
glued on the sensor package (ZMZ 20/30
or ZMY 20/30). Another option is the
ZMY20M which provides a very compact
sensor including an integrated magnet,
and is available in a surface mount
package.

determined by the geometrical
di m e n s io ns of the s tri pe and the
magnetic anisotropy of permalloy. This
is taken into account by introducing a
f i e l d H0 t h a t r e p r e s e n t s t h e
demagnetising and anisotropic field.
One obtains
Hy2
sin2 α = for H < H0
H02
sin2 α = 1 for H > H0
The characteristic of a magnetoresistive
stripe as a field sensor is:
 Hy 2 
R = R0 + ∆R0 1− 2  for H < H0
 H0 
A linear characteristic of the
magnetoresistive sensor is required to
measure a small magnetic field. The
linear behaviour of the magnetoresistive
sensor is achieved by using a “Barber
pole” geometry. The stripes in Figure 1
are covered with aluminium bars having
an inclination of 45° to the stripe axis.
Aluminum has a low resistivity
compared to permalloy. Therefore the
Barber poles cause a change of the
current direction. The angle between
current and magnetisation is shifted by
45° as shown in Figure 3. The
relationship between resistance and
magnetic field is now
 Hy 

√1− 
2
R =Ro + ∆R0 ± ∆Ro  
H y
2 2
 Ho  H 0
A linear characteristic of the sensor is
given around Hy2/H20 = 0. The sign in this
equation is determined by the
inclination of the “Barber poles” (±45°)
AN20 - 2
Application Note 20
Issue 1 April 1996
Figure 3
Covering the stripe with “Barber poles”
consisting of aluminium changes the
direction of the current. This does not
influence the direction of magnetisation.
to the stripe axis. The characteristic of a
sensor with and without Barber poles is
presented in Figure 4.
The stripes of the magnetoresistive chip
are arranged as a meandering pattern.
They form a Wheatstone bridge which is
shown schematically in Figure 5. The
applied voltage is Vb. Each half bridge
consists of two resistors with different
“Barber pole” orientations. The voltage
between the resistors of a half bridge
changes upon application of a magnetic
field.
R bridge. The voltage difference V0 is the
R0+∆R0
with Barber poles
without Barber poles
R0
Hy
-1 -0,5 0 0,5 1 H0
Figure 4
Characteristics of magnetoresistive
sensors. The Barber pole structure
enables a linear behaviour of the sensor
for a small magnetic field.
Figure 5
Wheatstone bridge of a magnetoresistive
sensor with “Barber pole” structure. The
bridge is balanced by laser trimming.
The resistance of one resistor increases,
whilst the other resistor has a lower
resistance due to the differing field
characteristic. Adding a second half
bridge with an opposite arrangement of
“Barber poles” provides a Wheatstone
output signal of the sensor. Each half
bridge is trimmed to Vb/2 w ith an
additional resistor in order to get an
output voltage close to zero when no
external field is applied. The trimming
structures of the resistors in Figure 1
mark off the meander stripes on the left
and right side of the chips.
Operating conditions and
parameters
The shape of the stripe and the
anisotropy of permalloy only define an
ax is along the x-direction for the
magnetisation without external field Hy.
AN20 - 3
Application Note 20
Issue 1 April 1996
Figure 6
Safe operating area of ZMY20/ZMZ20.
Hxtot=Hx + Hd ; Tamb = 25°C
Hd = disturbing field.
This means that in this state the stripe
can have areas with a different direction
of magnetisation (magnetic domains)
and the sensor does not work in a stable
way. A safe operation of the sensor is
achieved by applying an auxiliary field
Hx. This field defines the direction of the
magnetisation. The range of Hy for safe
sensor operation is determined by the
strength of the auxiliary field. The safe
operating area (SOA) of the sensor is
demonstrated in Figure 6.
The field Hxtot = Hy + Hd determines the
allowed field values for Hy, where Hd is
an external disturbing field in the
x-direction.
There is no limitation for Hy in the case of
Hxtot ≥ 2.6 kA/m (ZMY20/ZMZ20). A small
permanent magnet is sufficient to create
the auxiliary field. The magnet can be
glued on the sensor package (ZMZ 20/30
or ZMY 20/30). Another option is the
ZMY20M which provides a very compact
sensor including an integrated magnet,
and is available in a surface mount
package.
 Application Note 20
Issue 1 April 1996
The operating datasheet parameters of external field for -1 kA/m ≤ Hy ≤1 kA/m. The Wheatstone bridge is balanced
the Wheatstone bridge are referred to an This parameter depends on the without the application of an external
input voltage Vb= 1V, due to the linear geometry of the permalloy meander and field (Hy≤ 0.1 kA/m). In this case the
relationship between input and output t h e a u x i l i a r y f i e l d . T h e l a t te r i s output voltage of the sensor is close to
voltage in this region. demonstrated in Figure 7 for Hx = 3 kA/m zero at room temperature. The deviation
a n d Hx = 6 k A / m . N o te t h e s m a l l of the output voltage from zero is called
The sensitivity S [mV/V/kA/m] of the operating area in the case of Hy = 0 kA/m. the offset voltage V0ff/Vb [mV/V]. The
magnetoresistive sensor is defined as A high sensitivity of the sensor leads to offset is caused by small geometric
the slope of the output voltage versus a small operating area for H y. variations of the bridge which occur
during the photolithographic process.
The offset of the bridge is adjusted by
Further details and complete Magnetoresistive Product information is provided in laser trimming. The voltage output of
the Appropriate Technical Handbook: please see Technical Publication section. each half bridge is Vb/2.
The bridge resistance Rbr [%/K] of the
ma gnetor esi sti v e s e n so r d e p e n d s
linearly on temperature. The
te m p e ra t ure coeff icient of bri dg e
resistance TCRbr [%/K] is positive. This
is typical for metals. The temperature
coefficient of sensitivity TCS [%/K] of the
sensor is negative for VB = const (TCSV),
because the strength of the
m a g n e t o r e s i s t i v e e f f e c t be c om e s
smaller with increasing temperature. In
the case of IB = const (TCSI), when the
sensor is powered by a constant current
supply, the temperature dependence of
the sensitivity is reduced due to the
linear relationship between input and
o u t p u t v o l t a ge . A hi g h e r br i d g e
resistance caused by a rise in
temperature leads to an increased
applied voltage, partly compensating
the change of sensitivity.
The Wheatstone bridge cannot fully
compensate the temperature
de pe nd en c e of the r es i stor s. The
t e m p e r a t u r e c oe ff i c i e n t o f o f f s e t
voltage TCVoff [µV/V/K] is due to local
Figure 7 changes of resistivity in the permalloy
Sensor output characteristic of ZMY20/ZMZ20. The sensitivity of the sensor can be thin film and photolithographic
controlled by applying an auxiliary field Hx. This auxiliary field is necessary for sensor variations. This characteristic of the
operation in a large field range. V0=f(Hy); HX-parameter;VB=const;Tamb=25°C. magnetoresistive sensor limits the
AN20 - 4 AN20 - 5
Application Note 20
Issue 1 April 1996
measurement of small magnetic fields in
a wide temperature range, especially in
the case of static fields. Two sensors can
b e s e l e c t ed h a v in g a c omp ar a b l e
temperature coefficient. The offset drift
i s p a r t l y e l i m in a t e d b y u si n g t h e
difference of the output voltages of both
sensors. Another elegant way to avoid
offset drift is to invert the direction of the
auxiliary field and thus inverting the
output voltage of the sensor. This can be
d o n e b y s m al l c oil s p r ov idi ng an
auxiliary field that can change its
direction.
The hysteresis of output voltage V0ffH/Vb
[µV/V] describes the accuracy of the
magnetoresistive sensor. The
magnetisation of the permalloy stripe is
not completely homogenous. There are
small areas of the meander, especially at
the corners of the stripes, where the
magnetisation is pinned and does not
correctly follow the external field. The
hysteresis is measured in a magnetic
field loop, where H y goes from -3 kA/m
to 3 kA/m and back to 0 kA/m (Hx = 3
kA/m). V0ffH/Vb denotes the shift of the
offset voltage caused by this loop.
The maximum range of output voltage
∆V0/Vb [ m V / V ] i s d e f i n e d a s th e
difference of output voltage for α = 0°
and α = 90°, where α denotes the angle
between current and magnetisation of
the magnetoresistive stripe. This means
that ∆V0/Vb represents the strength of the
magnetoresistive effect. This parameter
decreases with temperature and
determines the sensitivity of the sensor.
(An example of a typical
Magnetoresistive sensor datasheet, is
partially reproduced in Appendix B.)
 Application Note 20
Issue 1 April 1996
The operating datasheet parameters of external field for -1 kA/m ≤ Hy ≤1 kA/m. The Wheatstone bridge is balanced
the Wheatstone bridge are referred to an This parameter depends on the without the application of an external
input voltage Vb= 1V, due to the linear geometry of the permalloy meander and field (Hy≤ 0.1 kA/m). In this case the
relationship between input and output t h e a u x i l i a r y f i e l d . T h e l a t te r i s output voltage of the sensor is close to
voltage in this region. demonstrated in Figure 7 for Hx = 3 kA/m zero at room temperature. The deviation
a n d Hx = 6 k A / m . N o te t h e s m a l l of the output voltage from zero is called
The sensitivity S [mV/V/kA/m] of the operating area in the case of Hy = 0 kA/m. the offset voltage V0ff/Vb [mV/V]. The
magnetoresistive sensor is defined as A high sensitivity of the sensor leads to offset is caused by small geometric
the slope of the output voltage versus a small operating area for H y. variations of the bridge which occur
during the photolithographic process.
The offset of the bridge is adjusted by
Further details and complete Magnetoresistive Product information is provided in laser trimming. The voltage output of
the Appropriate Technical Handbook: please see Technical Publication section. each half bridge is Vb/2.
The bridge resistance Rbr [%/K] of the
ma gnetor esi sti v e s e n so r d e p e n d s
linearly on temperature. The
te m p e ra t ure coeff icient of bri dg e
resistance TCRbr [%/K] is positive. This
is typical for metals. The temperature
coefficient of sensitivity TCS [%/K] of the
sensor is negative for VB = const (TCSV),
because the strength of the
m a g n e t o r e s i s t i v e e f f e c t be c om e s
smaller with increasing temperature. In
the case of IB = const (TCSI), when the
sensor is powered by a constant current
supply, the temperature dependence of
the sensitivity is reduced due to the
linear relationship between input and
o u t p u t v o l t a ge . A hi g h e r br i d g e
resistance caused by a rise in
temperature leads to an increased
applied voltage, partly compensating
the change of sensitivity.
The Wheatstone bridge cannot fully
compensate the temperature
de pe nd en c e of the r es i stor s. The
t e m p e r a t u r e c oe ff i c i e n t o f o f f s e t
voltage TCVoff [µV/V/K] is due to local
Figure 7 changes of resistivity in the permalloy
Sensor output characteristic of ZMY20/ZMZ20. The sensitivity of the sensor can be thin film and photolithographic
controlled by applying an auxiliary field Hx. This auxiliary field is necessary for sensor variations. This characteristic of the
operation in a large field range. V0=f(Hy); HX-parameter;VB=const;Tamb=25°C. magnetoresistive sensor limits the
AN20 - 4 AN20 - 5
Application Note 20
Issue 1 April 1996
measurement of small magnetic fields in
a wide temperature range, especially in
the case of static fields. Two sensors can
b e s e l e c t ed h a v in g a c omp ar a b l e
temperature coefficient. The offset drift
i s p a r t l y e l i m in a t e d b y u si n g t h e
difference of the output voltages of both
sensors. Another elegant way to avoid
offset drift is to invert the direction of the
auxiliary field and thus inverting the
output voltage of the sensor. This can be
d o n e b y s m al l c oil s p r ov idi ng an
auxiliary field that can change its
direction.
The hysteresis of output voltage V0ffH/Vb
[µV/V] describes the accuracy of the
magnetoresistive sensor. The
magnetisation of the permalloy stripe is
not completely homogenous. There are
small areas of the meander, especially at
the corners of the stripes, where the
magnetisation is pinned and does not
correctly follow the external field. The
hysteresis is measured in a magnetic
field loop, where H y goes from -3 kA/m
to 3 kA/m and back to 0 kA/m (Hx = 3
kA/m). V0ffH/Vb denotes the shift of the
offset voltage caused by this loop.
The maximum range of output voltage
∆V0/Vb [ m V / V ] i s d e f i n e d a s th e
difference of output voltage for α = 0°
and α = 90°, where α denotes the angle
between current and magnetisation of
the magnetoresistive stripe. This means
that ∆V0/Vb represents the strength of the
magnetoresistive effect. This parameter
decreases with temperature and
determines the sensitivity of the sensor.
(An example of a typical
Magnetoresistive sensor datasheet, is
partially reproduced in Appendix B.)
 Application Note 20 Application Note 20
Issue 1 April 1996 Issue 1 April 1996

Applications Figure 9 provides a method for R1 R13

VDD
R9
10k 100k
revolution measurement by reacting to 10k

*
U1B

4
5

[Please refer to appendix A which a modulated magnetic field due to a

3 U1A 7

*
13 U1D 1 R5 6
14
R3 R17 R19 2

summarises some graphic examples of rotating cog. The circuit gives a signal
12
10k 200k
10k
TL064

*
1M TL064
TL064

11
applic ations for m a gnetore s is tiv e

*
whose frequency is proportional to the B1 R7

*
ZMZ20 9 U1C

sensors]. rotational velocity of the cog, and a high 10

8 VSS
C1 470n
10k

level output for no rotation. TL064

*
Figure 8 shows a ZMC20 current sensor
being used as a basis for an overcurrent Figure 10 shows an application circuit for R2 R14
VDD
R10
trip switch used to protect power IGBTs t h r e e - d i m e ns i on a l m a g ne ti c fi e l d
10k 100k
10k

*
U2B

4
5

within a motor driver system. The circuit 3 U2A 7

*
observation. When the unit is enabled, it 13 U2D
14 R4 R18 R20 2
1 R6 6

reacts within 3µs to prevent latch-up calibrates itself to the existing magnetic
12
200k 1M
10k
TL064

*
10k TL064
TL064

11
related failure under transient/pulse

*
field of the earth, and then generates a R8

*
9 U2C
VSS
conditions, and was built within a warning signal if it is moved. The system +5V VDD 10
8
C2 470n
10k

module measuring 35 x 20 x 25mm. An employs three ZMY20 sensors (one for R15 TL064

*
100k
R11
external 10kΩ preset is required for

4
each dimension) and a CMOS EPROM 3 U3A
1
10k

offset adjustment. Supply voltage is +5V microcontroller with an A/D converter.

2
R21
1M

4
R16

± 10% at 10mA; output is via an open

TL064 3 U3B
100k

11
Similar circuits have been designed for VSS R12 2
1

collector transistor rated ar 1A, 20V; automotive immobiliser/alarm systems 10k

TL064

11
operating temperature range is 0 to that monitor the position of the vehicle T1
R22

330R
80°C. by sensing the magnetic field of a Output

movab le permanent magnet. This Figure 9

magnet is necessary to shield the sensor Sensor for Revolution Measurement.

6
from disturbing fields (generated by
+5V
supp ly lines, c ar alt ernato rs e tc.)
R1
10k
Supporting software for these systems
is available on request.
R3
10k 5
P1 10k
Output

Adjust Offset

11,12,13 R6
- 680k
I mess
*
8

+ 5 U1B
1 6 R4 24k 3 U1A 7 R9
8,9,10 B1 1 6 T1
8 ZMC20 2 1k BC369
R5 24k
MC33172
*

MC33172
5 3
4

R7 1
4 Adjust
680k Offset
R2
10k
R8
20k

4
Ground

Figure 8
Overcurrent Switch using the ZMC20, for Protection of Power IGBTs.

AN20 - 6 AN20 - 7
 Application Note 20 Application Note 20
Issue 1 April 1996 Issue 1 April 1996

Applications Figure 9 provides a method for R1 R13

VDD
R9
10k 100k
revolution measurement by reacting to 10k

*
U1B

4
5

[Please refer to appendix A which a modulated magnetic field due to a

3 U1A 7

*
13 U1D 1 R5 6
14
R3 R17 R19 2

summarises some graphic examples of rotating cog. The circuit gives a signal
12
10k 200k
10k
TL064

*
1M TL064
TL064

11
applic ations for m a gnetore s is tiv e

*
whose frequency is proportional to the B1 R7

*
ZMZ20 9 U1C

sensors]. rotational velocity of the cog, and a high 10

8 VSS
C1 470n
10k

level output for no rotation. TL064

*
Figure 8 shows a ZMC20 current sensor
being used as a basis for an overcurrent Figure 10 shows an application circuit for R2 R14
VDD
R10
trip switch used to protect power IGBTs t h r e e - d i m e ns i on a l m a g ne ti c fi e l d
10k 100k
10k

*
U2B

4
5

within a motor driver system. The circuit 3 U2A 7

*
observation. When the unit is enabled, it 13 U2D
14 R4 R18 R20 2
1 R6 6

reacts within 3µs to prevent latch-up calibrates itself to the existing magnetic
12
200k 1M
10k
TL064

*
10k TL064
TL064

11
related failure under transient/pulse

*
field of the earth, and then generates a R8

*
9 U2C
VSS
conditions, and was built within a warning signal if it is moved. The system +5V VDD 10
8
C2 470n
10k

module measuring 35 x 20 x 25mm. An employs three ZMY20 sensors (one for R15 TL064

*
100k
R11
external 10kΩ preset is required for

4
each dimension) and a CMOS EPROM 3 U3A
1
10k

offset adjustment. Supply voltage is +5V microcontroller with an A/D converter.

2
R21
1M

4
R16

± 10% at 10mA; output is via an open

TL064 3 U3B
100k

11
Similar circuits have been designed for VSS R12 2
1

collector transistor rated ar 1A, 20V; automotive immobiliser/alarm systems 10k

TL064

11
operating temperature range is 0 to that monitor the position of the vehicle T1
R22

330R
80°C. by sensing the magnetic field of a Output

movab le permanent magnet. This Figure 9

magnet is necessary to shield the sensor Sensor for Revolution Measurement.

6
from disturbing fields (generated by
+5V
supp ly lines, c ar alt ernato rs e tc.)
R1
10k
Supporting software for these systems
is available on request.
R3
10k 5
P1 10k
Output

Adjust Offset

11,12,13 R6
- 680k
I mess
*
8

+ 5 U1B
1 6 R4 24k 3 U1A 7 R9
8,9,10 B1 1 6 T1
8 ZMC20 2 1k BC369
R5 24k
MC33172
*

MC33172
5 3
4

R7 1
4 Adjust
680k Offset
R2
10k
R8
20k

4
Ground

Figure 8
Overcurrent Switch using the ZMC20, for Protection of Power IGBTs.

AN20 - 6 AN20 - 7
 1 2

Figure 10
X U1A Y

1
4066

C
3 B1

*
4

13
ZMY20 10 U3C
8
9

2
11 10
MC33174

*
X U1B Y VCC
4066 R4

C
100k C1
4 3 R12 R7

12
X U2C Y
4066 33k 100k R5
4 3 1u5

C
X U1C Y 100k
4066

1
U4

C
14
R13 PIC16C71

*
B2 R2 10k U3B

5
3 4 6
ZMY20 33k 17 6
R14 7 RA0/AIN0 RB0/INT
8 9
VDD
5 LS1
X U2D Y 18 7
4066 33k RA1/AIN1 RB1
R3 10k MC33174

*
8

2
1 2 1 RB2

C
X U2A Y R11 R6 RA2/AIN2
33k 100k

6
4066 2 9
RA3/AIN3 RB3

C
R8 3 10
RA4/RTCC RB4

13
100k 4 RB5 11 R15
MCLR/VPP 430R
11 10 16 RB6 12
X U2B Y OSC1

*
Q1
4066 U3D 15

AN20 - 8
13

1
OSC2/CLK RB7 13
14 R1

C
12 10k
VSS

3 B3 4 QUARTZ D2

12
LED
5

ZMY20 MC33174

*
C2 C3
D3

2
11 10
X U2B Y ZRA500 22p 22p
4066

C
12
VDD
VCC
R9 U5 ZSR600 S1
100k 3 1

4
VO VI +12V
3 U3A
T1 ZVP2106
1
GND
D1 DIODE
2
2
R10
100k MC33174
Ground

11

Sensor System used to Monitor Movement in the Earth’s Magnetic Field.

Issue 1 April 1996
Application Note 20

AN20 - 9
Issue 1 April 1996
Application Note 20
 Application Note 20 Application Note 20
Issue 1 April 1996 Issue 1 April 1996

Appendix A
Magnetoresistive sensor Basic Function/Application Examples.

Measurement of Current (AC or DC) Detection of Ferromagnetic Objects

Measurement of Angular Position

Measurement of Rotation Speed

Position Sensor Measurement of the Earth’s Magnetic

Field

AN20 - 16 AN20 - 9
 Application Note 20 Application Note 20
Issue 1 April 1996 Issue 1 April 1996

Appendix B
Partial Characterisation for ZMY20/30, ZMZ20/30 Magnetoresistive
Sensors.

ELECTRICAL CHARACTERISTICS (at Tamb = 25 °C and Hx = 3 kA/m unless otherwise stated)

Parameter Symbol Min. Typ. Max. Unit Test conditions

Bridge resistance R br
ZMY20/ZMZ20 1.2 1.7 2.2 kΩ
ZMY30/ZMZ30 2.0 3.0 4.0

Output voltage range VO/VB

ZMY20/ZMZ20 16 18 22 mV/V
ZMY30/ZMZ30 12 16 20

Open circuit sensitivity S 3.2 4.0 4.8 (mV/V)/ no disturbing

ZMY20/ZMZ20 2.0 3.0 4.0 (kA/m) field Hd allowed
ZMY30/ZMZ30

Hysteresis of output VOH /VB - - 50 µV/V Hy ≤ 2 kA/m

voltage

Offset voltage Voff /VB -1.0 - +1.0 mV/V

Operating frequency fmax 0 - 1 MHz

Temperature coefficient TCVoff -3 - +3 (µV/V)/K Tamb =

of offset voltage -25...+125°C

Temperature coefficient TCRbr - 0.3 - %/K Tamb =

of bridge resistance -25...+125°C

Temperature coefficient TCS V - -0.4 - %/K Tamb =

of open circuit sensitivity -25...+125°C
VB = 5 V

Temperature coefficient TCS I - -0.1 - %/K Tamb =

of open circuit sensitivity -25...+125°C
I B = 3 mA

AN20 - 12 AN20 -10