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CMOS 1.8 V to 5.5 V, 2.

5 SPDT Switch/2:1 Mux in Tiny SC70 Package ADG779


FEATURES
1.8 V to 5.5 V single supply 2.5 on resistance 0.75 on-resistance flatness 3 dB bandwidth >200 MHz Rail-to-rail operation 6-lead SC70 package Fast switching times tON 20 ns tOFF 6 ns Typical power consumption (<0.01 W) TTL/CMOS compatible

FUNCTIONAL BLOCK DIAGRAM


ADG779
S2 S1 D

IN SWITCHES SHOWN FOR A LOGIC 1 INPUT


02491-001

Figure 1.

APPLICATIONS
Battery-powered systems Communication systems Sample hold systems Audio signal routing Video switching Mechanical reed relay replacements

GENERAL DESCRIPTION
The ADG779 is a monolithic CMOS SPDT (single-pole, double-throw) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The ADG779 operates from a single supply range of 1.8 V to 5.5 V, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices, Inc. Each switch of the ADG779 conducts equally well in both directions when on. The ADG779 exhibits break-before-make switching action. Because of the advanced submicron process, 3 dB bandwidth of greater than 200 MHz can be achieved. The ADG779 is available in a 6-lead SC70 package.

PRODUCT HIGHLIGHTS
1. 2. Tiny 6-Lead SC70 Package. 1.8 V to 5.5 V Single-Supply Operation. The ADG779 offers high performance, including low on resistance and fast switching times, and is fully specified and guaranteed with 3 V and 5 V supply rails. Very Low RON (5 max at 5 V, 10 max at 3 V). At 1.8 V operation, RON is typically 40 over the temperature range. On-Resistance Flatness (RFLAT (ON)) (0.75 typ). 3 dB Bandwidth > 200 MHz. Low Power Dissipation. CMOS construction ensures low power dissipation. 14 ns Switching Times.

3. 4. 5. 6. 7.

Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 2005 Analog Devices, Inc. All rights reserved.

ADG779 TABLE OF CONTENTS


Features .............................................................................................. 1 Applications....................................................................................... 1 Functional Block Diagram .............................................................. 1 General Description ......................................................................... 1 Product Highlights ........................................................................... 1 Revision History ............................................................................... 2 Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 5 ESD Caution.................................................................................. 5 Pin Configuration and Function Descriptions..............................6 Terminology .......................................................................................7 Typical Performance Characteristics ..............................................8 Test Circuits..................................................................................... 10 Outline Dimensions ....................................................................... 12 Ordering Guide .......................................................................... 12

REVISION HISTORY
10/05Rev. 0 to Rev. A Updated Format..................................................................Universal Changes to Table 1............................................................................ 3 Changes to Table 2............................................................................ 4 Changes to Table 3............................................................................ 5 Changes to Terminology Section.................................................... 7 Changes to Ordering Guide .......................................................... 12

7/01Revision 0: Initial Version

Rev. A | Page 2 of 12

ADG779 SPECIFICATIONS
VDD = 5 V 10%, GND = 0 V 1 Table 1.
B Version 40C to +85C 0 V to VDD 2.5 5 0.1 0.75 1.2 LEAKAGE CURRENTS 2 Source Off Leakage IS (Off ) Channel On Leakage ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation Channel-to-Channel Crosstalk Bandwidth 3 dB CS (Off ) CD, CS (On) POWER REQUIREMENTS IDD 0.01 0.01 0.05 0.05 2.4 0.8 0.005 0.1 14 20 3 6 8 1 67 87 62 82 200 7 27 6 0.8 On-Resistance Flatness (RFLAT (ON))

Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Match Between Channels (RON)

25C

Unit V typ max typ max typ max nA typ nA typ V min V max A typ A max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ

Test Conditions/Comments

VS = 0 V to VDD, IS = 10 mA, see Figure 12 VS = 0 V to VDD, IS = 10 mA VS = 0 V to VDD, IS = 10 mA VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 13 VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 14

VIN = VINL or VINH

RL = 300 , CL = 35 pF VS = 3 V, see Figure 15 RL = 300 , CL = 35 pF VS = 3 V, see Figure 15 RL = 300 , CL = 35 pF VS1 = VS2 = 3 V, see Figure 16 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz, see Figure 17 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz, see Figure 18 RL = 50 , CL = 5 pF, see Figure 19 f = 1 MHz f = 1 MHz VDD = 5.5 V Digital Inputs = 0 V or 5 V

0.001 1.0

A typ A max

1 2

Temperature range is B Version, 40C to +85C. Guaranteed by design, not subject to production test.

Rev. A | Page 3 of 12

ADG779
VDD = 3 V 10%, GND = 0 V 1 Table 2.
B Version 40C to +85C 0 V to VDD 7 10 0.8 On-Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS 2 Source Off Leakage IS (Off ) Channel On Leakage ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation Channel-to-Channel Crosstalk Bandwidth 3 dB CS (Off ) CD, CS (On) POWER REQUIREMENTS IDD 2.5 0.01 0.01 0.05 0.05 2.0 0.8 0.005 0.1 16 24 4 7 8 1 67 87 62 82 200 7 27

Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Match Between Channels (RON)

25C

Unit V typ max typ max typ nA typ nA typ V min V max A typ A max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ

Test Conditions/Comments

6 0.1

VS = 0 V to VDD, IS = 10 mA, see Figure 12 VS = 0 V to VDD, IS = 10 mA VS = 0 V to VDD, IS = 10 mA VDD = 3.3 V VS = 3 V/1 V, VD = 1 V/3 V, see Figure 13 VS = VD = 1 V, or VS = VD = 3 V, see Figure 14

VIN = VINL or VINH

RL = 300 , CL = 35 pF VS = 2 V, see Figure 15 RL = 300 , CL = 35 pF VS = 2 V, see Figure 15 RL = 300 , CL = 35 pF VS1 = VS2 = 2 V, see Figure 16 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz, see Figure 17 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz, see Figure 18 RL = 50 , CL = 5 pF, see Figure 19 f = 1 MHz f = 1 MHz VDD = 3.3 V Digital Inputs = 0 V or 3 V

0.001 1.0

A typ A max

1 2

Temperature range is B Version, 40C to +85C. Guaranteed by design, not subject to production test.

Rev. A | Page 4 of 12

ADG779 ABSOLUTE MAXIMUM RATINGS


TA = 25C, unless otherwise noted. Table 3.
Parameter VDD to GND Analog, Digital Inputs 1 Peak Current, S or D Continuous Current, S or D Operating Temperature Range Industrial (B Version) Storage Temperature Range Junction Temperature SC70 Package, Power Dissipation JA Thermal Impedance JC Thermal Impedance Lead Temperature, Soldering Vapor Phase (60 sec) Infrared (15 sec) Reflow Soldering (Pb-free) Peak Temperature Time at Peak Temperature
1

Rating 0.3 V to +7 V 0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first 100 mA (pulsed at 1 ms, 10% duty cycle max) 30 mA 40C to +85C 65C to +150C 150C 315 mW 332C/W 120C/W 215C 220C 260 (+0/5)C 10 sec to 40 sec

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Table 4. Truth Table


ADG779 IN 0 1 Switch S1 On Off Switch S2 Off On

Overvoltages at IN, S, or D are clamped by internal diodes. Current should be limited to the maximum ratings given.

ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

Rev. A | Page 5 of 12

ADG779 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS


IN 1
6

S2

ADG779
VDD 2 GND 3
02491-002

5 D TOP VIEW (Not to Scale) 4

S1

Figure 2. Pin Configuration

Table 5. Pin Function Descriptions


Pin No. 1 2 3 4 5 6 Mnemonic IN VDD GND S1 D S2 Description Logic Control Input. Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. Can be an input or an output. Drain Terminal. Can be an input or an output. Source Terminal. Can be an input or an output.

Rev. A | Page 6 of 12

ADG779 TERMINOLOGY
VDD Most positive power supply potential. IDD Positive supply current. GND Ground (0 V) reference. S Source terminal. Can be an input or an output. D Drain terminal. Can be an input or an output. IN Logic control input. VD (VS) Analog voltage on drain (D) and source (S) terminals. RON Ohmic resistance between the D and S. RFLAT (ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured. RON On-resistance mismatch between any two channels. IS (Off) Source leakage current with the switch off. ID (Off) Drain leakage current with the switch off. ID, IS (On) Channel leakage current with the switch on. VINL Maximum input voltage for Logic 0. VINH Minimum input voltage for Logic 1. IINL (IINH) Input current of the digital input. CS (Off) Off switch source capacitance. Measured with reference to ground. CD (Off) Off switch drain capacitance. Measured with reference to ground. CD, CS (On) On switch capacitance. Measured with reference to ground. CIN Digital input capacitance. tON Delay time between the 50% and 90% points of the digital input and switch on condition. tOFF Delay time between the 50% and 90% points of the digital input and switch off condition. tBBM On or off time measured between the 80% points of both switches when switching from one to another. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on/off switching. Off Isolation A measure of unwanted signal coupling through an off switch. Crosstalk A measure of unwanted signal that is coupled through from one channel to another because of parasitic capacitance. 3 dB Bandwidth The frequency at which the output is attenuated by 3 dB. On Response The frequency response of the on switch. Insertion Loss The loss due to the on resistance of the switch. THD + N The ratio of harmonic amplitudes plus noise of a signal to the fundamental.

Rev. A | Page 7 of 12

ADG779 TYPICAL PERFORMANCE CHARACTERISTICS


6.0 5.5 5.0 4.5 VDD = 3V
CURRENT (nA)
0.15

VDD = 2.7V

TA = 25C
0.10

VDD = 5V VD = 4.5V/1V VS = 1V/4.5V

4.0
RON ()

3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.5

VDD = 4.5V

0.05

ID, IS (ON)

VDD = 5V

IS (OFF)

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VD OR VS DRAIN OR SOURCE VOLTAGE (V)

Figure 3. On Resistance as a Function of VD (VS) Single Supplies


6.0 5.5 5.0 4.5 4.0 +85C +25C 40C VDD = 3V

02491-003

10

20

30 40 50 60 TEMPERATURE (C)

70

80

90

Figure 6. Leakage Currents as a Function of Temperature


0.15 VDD = 3V VD = 3V/1V VS = 1V/3V 0.10

RON ()

3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0

CURRENT (nA)

0.05

ID, IS (ON)

IS (OFF)
1.5 2.0 2.5 3.0
02491-004

10

20

VD OR VS DRAIN OR SOURCE VOLTAGE (V)

30 40 50 60 TEMPERATURE (C)

70

80

90

Figure 4. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V


6.0 5.5 5.0 4.5 4.0
RON ()

Figure 7. Leakage Currents as a Function of Temperature


10m

VDD = 5V
1m 100

VDD = 5V

3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0

ISUPPLY (A)

+85C +25C 40C

10 1

100n 10n 1n

2.5

3.0

3.5

4.0

4.5

5.0

VD OR VS DRAIN OR SOURCE VOLTAGE (V)

Figure 5. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V

02491-005

10

100

1k 10k 100k FREQUENCY (Hz)

1M

10M

100M

Figure 8. Supply Current vs. Input Switching Frequency

Rev. A | Page 8 of 12

02491-008

02491-007

0.05

02491-006

0.05

ADG779
30 40 50 VDD = 5V, 3V 0

OFF ISOLATION (dB)

ON RESPONSE (dB)

60 70 80 90 100 110 120


02491-009

VDD = 5V 2

100k

1M 10M FREQUENCY (Hz)

100M

100k

1M 10M FREQUENCY (Hz)

100M

Figure 9. Off Isolation vs. Frequency


30 40 50 VDD = 5V, 3V

Figure 11. On Response vs. Frequency

CROSSTALK (dB)

60 70 80 90 100 110 120 100k 1M 10M FREQUENCY (Hz) 100M


02491-010

130 10k

Figure 10. Crosstalk vs. Frequency

Rev. A | Page 9 of 12

02491-011

130 10k

6 10k

ADG779 TEST CIRCUITS


IDS

V1
IS (OFF)

D
VS

ID (OFF) A
S
02491-013

ID (ON) A
02491-014

02491-012

VS

RON = V1/IDS

VD

VS

VD

Figure 12. On Resistance

Figure 13. Off Leakage

Figure 14. On Leakage

0.1F

VDD VIN VDD 50% 90% 50% 90%

S VS IN GND

D RL 300 CL 35pF

VOUT

VOUT

Figure 15. Switching Times

0.1F

VDD VIN D D2 RL2 300 GND CL2 35pF VOUT 50% 50%

VS1 VS2 VIN

S1 S2 IN

VDD

0V 50% 0V

VOUT

50%

Figure 16. Break-Before-Make Time Delay, tD

Rev. A | Page 10 of 12

02491-016

tD

tD

02491-015

tON

tOFF

ADG779
VDD 0.1F
VDD

0.1F

VDD S IN D VIN GND 50

NETWORK ANALYZER 50 VS VOUT


VIN

VDD S IN D

NETWORK ANALYZER 50 VS VOUT

RL 50

GND

RL 50

OFF ISOLATION = 20 log

VOUT VS

02491-017

INSERTION LOSS = 20 log

VOUT WITH SWITCH VOUT WITHOUT SWITCH

Figure 17. Off Isolation


VDD 0.1F

Figure 19. Bandwidth

NETWORK ANALYZER S1 VOUT RL 50 50 VS IN

VDD

S2

R 50

GND

CHANNEL-TO-CHANNEL CROSSTALK = 20 log

VOUT VS

Figure 18. Channel-to-Channel Crosstalk

02491-018

Rev. A | Page 11 of 12

02491-019

ADG779 OUTLINE DIMENSIONS


2.20 2.00 1.80 2.40 2.10 1.80

1.35 1.25 1.15 PIN 1 1.30 BSC 1.00 0.90 0.70

6 1

5 2

4 3

0.65 BSC 1.10 0.80 0.40 0.10 0.46 0.36 0.26

0.10 MAX

0.30 0.15 0.10 COPLANARITY

SEATING PLANE

0.22 0.08

COMPLIANT TO JEDEC STANDARDS MO-203-AB

Figure 20. 6-Lead Thin Shrink Small Outline Transistor Package [SC70] (KS-6) Dimensions shown in millimeters

ORDERING GUIDE
Model ADG779BKS-R2 ADG779BKS-REEL ADG779BKS-REEL7 ADG779BKSZ-R2 2 ADG779BKSZ-REEL2 ADG779BKSZ-REEL72
1 2

Temperature Range 40C to +85C 40C to +85C 40C to +85C 40C to +85C 40C to +85C 40C to +85C

Package Description 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70)

Package Option KS-6 KS-6 KS-6 KS-6 KS-6 KS-6

Branding 1 SKB SKB SKB S0M S0M S0M

Brand on these packages is limited to three characters due to space constraints. Z = Pb-free part.

2005 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. C02491010/05(A)

Rev. A | Page 12 of 12