Pages 1 to 13

TRANSISTORS, HIGH POWER, NPN

BASED ON TYPE 2N5672

ESCC Detail Specification No. 5203/004

Issue 3

September 2009

Document Custodian: European Space Agency - see https://escies.org

ESCC Detail Specification No. 5203/004

PAGE 2 ISSUE 3

LEGAL DISCLAIMER AND COPYRIGHT European Space Agency, Copyright 2009. All rights reserved. The European Space Agency disclaims any liability or responsibility, to any person or entity, with respect to any loss or damage caused, or alleged to be caused, directly or indirectly by the use and application of this ESCC publication. This publication, without the prior permission of the European Space Agency and provided that it is not used for a commercial purpose, may be: copied in whole, in any medium, without alteration or modification. copied in part, in any medium, provided that the ESCC document identification, comprising the ESCC symbol, document number and document issue, is removed.

ESCC Detail Specification No. 5203/004

PAGE 3 ISSUE 3

DOCUMENTATION CHANGE NOTICE (Refer to https://escies.org for ESCC DCR content) DCR No. CHANGE DESCRIPTION 447, 502 Specification up issued to incorporate editorial and technical changes per DCRs.

ESCC Detail Specification No. 5203/004

PAGE 4 ISSUE 3

TABLE OF CONTENTS 1. 1.1 1.2 1.3 1.4 1.4.1 1.4.2 1.5 1.6 1.7 1.8 2. 2.1 2.1.1 2.1.1.1 2.2 2.3 2.4 2.4.1 2.4.2 2.5 2.6 2.7 2.8 APPENDIX A GENERAL Scope Applicable Documents Terms, Definitions, Abbreviations, Symbols and Units The ESCC Component Number and Component Type Variants The ESCC Component Number Component Type Variants Maximum Ratings Physical Dimensions and Terminal Identification Functional Diagram Materials and Finishes REQUIREMENTS General Deviations from the Generic Specification Deviation from Screening Tests - Chart F3 Marking Terminal Strength Electrical Measurements at Room, High and Low Temperatures Room Temperature Electrical Measurements High and Low Temperatures Electrical Measurements Parameter Drift Values Intermediate and End-Point Electrical Measurements Power Burn-in Conditions Operating Life Conditions 5 5 5 5 5 5 5 5 6 7 7 8 8 8 8 8 8 8 8 11 11 12 12 12 13

ESCC Detail Specification No. 5203/004

PAGE 5 ISSUE 3

1.

GENERAL

1.1

SCOPE This specification details the ratings, physical and electrical characteristics and test and inspection data for the component type variants and/or the range of components specified below. It supplements the requirements of, and shall be read in conjunction with, the ESCC Generic Specification listed under Applicable Documents.

1.2

APPLICABLE DOCUMENTS The following documents form part of this specification and shall be read in conjunction with it: (a) ESCC Generic Specification No. 5000 (b) MIL-STD-750, Test Methods and Procedures for Semiconductor Devices

1.3

TERMS, DEFINITIONS, ABBREVIATIONS, SYMBOLS AND UNITS For the purpose of this specification, the terms, definitions, abbreviations, symbols and units specified in ESCC Basic Specification No. 21300 shall apply.

1.4 1.4.1

THE ESCC COMPONENT NUMBER AND COMPONENT TYPE VARIANTS The ESCC Component Number The ESCC Component Number shall be constituted as follows: Example: 520300401 Detail Specification Reference: 5203004 Component Type Variant Number: 01 (as required)

1.4.2

Component Type Variants The component type variants applicable to this specification are as follows:

Variant Number 01 02 03

Based on Type 2N5672 2N5672 2N5672

Case TO-3 TO-3 TO-3

Lead/Terminal Material and Finish D2 H7 H9

Weight max g 18 18 18

The lead/terminal material and finish shall be in accordance with the requirements of ESCC Basic Specification No. 23500.

1.5

MAXIMUM RATINGS The maximum ratings shall not be exceeded at any time during use or storage. Maximum ratings shall only be exceeded during testing to the extent specified in this specification and when stipulated in Test Methods and Procedures of the ESCC Generic Specification.

ESCC Detail Specification No. 5203/004

PAGE 6 ISSUE 3

Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Base Current Power Dissipation Thermal Resistance, Junction-to-Case Operating Temperature Range Storage Temperature Range Soldering Temperature

Symbols V(BR)CBO V(BR)CEO V(BR)EBO IC IB Ptot Rth(j-c) Top Tstg Tsol

Maximum Ratings 150 120 7 30 10 140 1.25 -65 to +200 -65 to +200 +260

Unit V V V A A W
oC/W oC oC oC

Remarks Over Top Over Top Over Top

At Tcase +25C

Note 1 Note 1 Note 2

NOTES: 1. For Variants with tin-lead plating or hot solder dip lead finish all testing, and any handling, performed at Tamb > +125oC shall be carried out in a 100% inert atmosphere. 2. Duration 10 seconds maximum at a distance of not less than 1.5mm from the device body and the same lead shall not be resoldered until 3 minutes have elapsed.

1.6

PHYSICAL DIMENSIONS AND TERMINAL IDENTIFICATION Metal Flange Mount Package (TO-3) - 2 lead
R2 P

B D Q

S 1 2

R1

3 (case) E1 E L

F A

Symbols A B

Dimensions mm Min 6.35 0.97 Max 11.43 1.09

Notes

ESCC Detail Specification No. 5203/004

PAGE 7 ISSUE 3

Symbols D E E1 F L P Q R1 R2 S

Dimensions mm Min 10.67 5.21 1.27 7.92 3.84 29.9 12.57 3.33 16.54 Max 22.23 11.18 5.72 3.43 4.09 30.4 13.34 4.78 17.15

Notes

NOTES: 1. Terminal identification is specified by the components geometry where Lead 1 = emitter, Lead 2 = base and Terminal 3 (case) = collector. 2. Applies to both leads. 3. Applies to both mounting holes.

1.7

FUNCTIONAL DIAGRAM
3 1. Emitter. 2 2. Base. 3. Collector. 1

NOTES: 1. The collector is internally connected to the case.

1.8

MATERIALS AND FINISHES Materials and finishes shall be as follows: a) Case The case shall be hermetically sealed and have a metal body with hard glass seals. Leads/Terminals As specified in Component Type Variants.

b)

ESCC Detail Specification No. 5203/004

PAGE 8 ISSUE 3

2.

REQUIREMENTS

2.1

GENERAL The complete requirements for procurement of the components specified herein are as stated in this specification and the ESCC Generic Specification. Permitted deviations from the Generic Specification, applicable to this specification only, are listed below. Permitted deviations from the Generic Specification and this Detail Specification, formally agreed with specific Manufacturers on the basis that the alternative requirements are equivalent to the ESCC requirement and do not affect the components reliability, are listed in the appendices attached to this specification.

2.1.1 2.1.1.1

Deviations from the Generic Specification Deviation from Screening Tests - Chart F3 High Temperature Reverse Bias Burn-in and the subsequent Final Measurements for HTRB shall be omitted.

2.2

MARKING The marking shall be in accordance with the requirements of ESCC Basic Specification No. 21700 and as follows. The information to be marked on the component shall be: (a) The ESCC qualified components symbol (for ESCC qualified components only). (b) The ESCC Component Number. (c) Traceability information.

2.3

TERMINAL STRENGTH The test conditions for terminal strength, tested as specified in the ESCC Generic Specification, shall be as follows: Test condition A, tension, with an applied force of 10N for a duration of 10s.

2.4

ELECTRICAL MEASUREMENTS AT ROOM, HIGH AND LOW TEMPERATURES Electrical measurements shall be performed at room, high and low temperatures. Room Temperature Electrical Measurements The measurements shall be performed at Tamb=+22 3oC.

2.4.1

ESCC Detail Specification No. 5203/004

PAGE 9 ISSUE 3

Characteristics

Symbols

MIL-STD-750 Test Method 3011

Test Conditions

Limits Min Max -

Units

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = 200mA Bias condition D Note 1 IC = 200mA VBE=-1.5V Bias condition C IC = 200mA RBE=50 Bias condition B VCE=135V VBE=-1.5V Bias condition A VCE =80V Bias condition D VEB =7V Bias condition D VCE=5V ; IC =20A Note 1 VCE=2V ; IC =15A Note 1 IC=15A VCE=5V Note 1 IC=15A IB=1.2A Note 1 IC=15A IB=1.2A Test condition A Note 1 VCE=10V, IC=2A f=5MHz Note 2

120

V(BR)CEX

3011

150

V(BR)CER

3011

140

Collector-Emitter Cut-off Current

ICEX

3041

10

mA

ICEO Emitter-Base Cutoff Current Forward-Current Transfer Ratio IEBO hFE1 hFE2 Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VBE

3041 3061 3076 3076 3020

20 20 -

10 10 100 1.6

mA mA V

VCE(sat)

3071

750

mV

VBE(sat)

3066

1.5

Magnitude of Small-Signal Short-Circuit Forward-Current Transfer Ratio Output Capacitance

|hfe|

3306

10

Cobo

3236

VCB=10V, IE=0A f=1MHz Note 2

900

pF

ESCC Detail Specification No. 5203/004

PAGE 10 ISSUE 3

Characteristics

Symbols

MIL-STD-750 Test Method 3251

Test Conditions

Limits Min Max 500

Units

Turn-on Time

ton

IC=15A, IB1=1.2A IB2=1.2A VCC=30 2V VBB=4 1V VIN=9 1V Test condition A Notes 2, 3 IC=15A, IB1=1.2A IB2=1.2A VCC=30 2V VBB=4 1V VIN=9 1V Test condition A Notes 2, 3

ns

Turn-off Time

toff

3251

1.5

NOTES: 1. Pulsed measurement: Pulse Width 300s, Duty Cycle 2%. 2. For AC characteristics read and record measurements shall be performed on a sample of 32 components with 0 failures allowed. Alternatively a 100% inspection may be performed. 3. ton and toff shall be measured using the following test circuit. The input waveform shall be supplied by a pulse generator with the following characteristics: tr=tf 20ns, Pulse Width = 20s, Duty Cycle = 2%. The output sampling oscilloscope shall have the characteristics ZIN 100k, CIN 50pF and tr 20ns. Adjustment of VIN shall be made with a suitable current probe to achieve the specified IB1 and IB2 test conditions, where IB1 is the on-state base current and IB2 is the post off-state base current.

ESCC Detail Specification No. 5203/004

PAGE 11 ISSUE 3

VCC VBB 20W 33W 1W 33W 1W

10W

OUTPUT

INPUT

VIN = 9 1V

90%

INPUT
0V 10%

ton toff VCE OUTPUT 10% 0V 90%

2.4.2

High and Low Temperatures Electrical Measurements Characteristics Symbols MIL-STD-750 Test Method 3041 Test Conditions Note 1 Tcase=+150(+0 VCE = 100V VBE=-1.5V Bias condition A -5)oC Limits Min Max 10 mA Units

Collector-Emitter Cut-off Current

ICEX

NOTES: 1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a 100% inspection may be performed.

2.5

PARAMETER DRIFT VALUES Unless otherwise specified, the measurements shall be performed at Tamb=+22 3oC. The test methods and test conditions shall be as per the corresponding test defined in Room Temperature Electrical Measurements. The drift values () shall not be exceeded for each characteristic specified. The corresponding absolute limit values for each characteristic shall not be exceeded.

ESCC Detail Specification No. 5203/004

PAGE 12 ISSUE 3

Characteristics

Symbols Drift Value

Limits Absolute Min Max

Units

Collector-Emitter Cut-off Current

ICEO

500 or (1) 100% 15% 15%

10000

Forward-Current Transfer Ratio 2 Collector-Emitter Saturation Voltage

hFE2 VCE(sat)

20 -

100 750

mV

NOTES: 1. Whichever is greater, referred to the initial value.

2.6

INTERMEDIATE AND END-POINT ELECTRICAL MEASUREMENTS Unless otherwise specified, the measurements shall be performed at Tamb=+22 3oC. The test methods and test conditions shall be as per the corresponding test defined in Room Temperature Electrical Measurements. The limit values for each characteristic shall not be exceeded.

Characteristics

Symbols Min

Limits Max 10 100 750

Units

Collector-Emitter Cut-off Current Forward-Current Transfer Ratio 2 Collector-Emitter Saturation Voltage

ICEO hFE2 VCE(sat)

20 -

mA mV

2.7

POWER BURN-IN CONDITIONS Characteristics Case Temperature Power Dissipation Symbols Tcase Ptot Conditions +100 (+0 -5) As per Maximum Ratings. Derate Ptot at the specified Tcase using the specified Rth(j-c). 20 Units
oC

Collector-Base Voltage

VCB

2.8

OPERATING LIFE CONDITIONS The conditions shall be as specified for Power Burn-in.

ESCC Detail Specification No. 5203/004

PAGE 13 ISSUE 3

APPENDIX A AGREED DEVIATIONS FOR STMICROELECTRONICS (F) ITEMS AFFECTED Deviations from Room Temperature Electrical Measurements DESCRIPTION OF DEVIATIONS All AC characteristics (Room Temperature Electrical Measurement Note 2) may be considered guaranteed but not tested if successful pilot lot testing has been performed on the wafer lot which includes AC characteristic measurements per the Detail Specification. A summary of the pilot lot testing shall be provided if required by the Purchase Order. All characteristics specified may be considered guaranteed but not tested if successful pilot lot testing has been performed on the wafer lot which includes characteristic measurements at high and low temperatures per the Detail Specification. A summary of the pilot lot testing shall be provided if required by the Purchase Order. Solderability is not applicable unless specifically stipulated in the Purchase Order.

Deviations from High and Low Temperatures Electrical Measurements

Deviations from Screening Tests Chart F3