Power Converter Course, Warrington 12.05.

2005
Insert image here

High Power Active Devices

Insert image here

Insert image here Eric Carroll, ABB Switzerland

ABB Switzerland Ltd - 1 5/27/2004

 ABB Switzerland Ltd - 2 -

INTRODUCTION

Electronic Switches

Thyristor
Can be turned on by gate signal but can only be turned off by reversal of the anode current

Gate Turn-Off Thyristor (GTO)

Can be turned on and off by the gate signal but requires large capacitor (snubber) across device to limit dv/dt

Transistor (transitional resistor)

Can be turned on and off by the gate (or base) signal but has high conduction losses (its an amplifier, not a switch)

ABB Switzerland Ltd - 3 -

Integrated Gate Commutated Thyristor (IGCT)

Can be turned on and off by the gate signal, has low conduction loss and requires no dv/dt snubber

Available Self-Commutated Semiconductor Devices

THYRISTORS
Anode Anode

TRANSISTORS
BIPOLAR TRANSISTOR
Collector

GTO (Gate Turn-Off Thyristor)

P P N P

MCT (MOS-Controlled Thyristor)

N P

N P N

DARLINGTON TRANSISTOR
P

Base

N P

FCTh (Field-Controlled Thyristor)

N

Gate

Gate

MOSFET

SITh (Static Induction Thyristor) MTO (MOS Turn-Off Thyristor)

Cathode Cathode

FCT (Field Controlled Transistor)

Emitter

SIT (Static Induction Transistor)

Collector IEGT (Injection Enhanced

EST (Emitter-Switched Thyristor)

Anode

(insulated) Gate Transistor)

IGTT (Insulated Gate Turn-off Thyristor)

ABB Switzerland Ltd - 4 Gate IGT (Insulated Gate Thyristor)

IGBT (Insulated Gate Bipolar Transistor) Base

IGCT (Integrated Gate-Commutated Cathode

Thyristor)

Emitter

High Power Turn-off Devices

Power Semiconductors

Turn-off Devices

Thyristors
Line commutated

Diodes
Fast

Transistors

Thyristors

Fast Bi-directional Pulse

Line commutated Avalanche

ABB Switzerland Ltd - 5 -

Darlingtons IGBTs

GTOs IGCTs

Power Semiconductors
are switches.

VDC

VAC

ABB Switzerland Ltd - 6 -

.for converting electrical energy

Turn-on Switches (Thyristors) Thyristors (PCTs)

thyristors produce voltage distortion in phase control mode

will ultimately be replaced by ToDs, except... in AC configuration for:

transfer switches tap changers line interrupters

V

ABB Switzerland Ltd - 7 -

World Energy Consumption

1000 100 10 1 0
3% 1940 1950 1960 1970 2 37% 15% 6% 1980 1990 2000 2010 2020 2030 57 100 200 30 6 397 147

Millions of Barrels/Day

total energy electrification % electrification Source : Mitsubishi Electric

0.1
ABB Switzerland Ltd - 8 -

... drives the need for high power electronics

Energy trend
By 2020:
Energy consumption will double Electricity generation will double Electrification of end-consumption will quintuple

Today, only 15% of electricity flows via electronics Medium Voltage conversion has only been economically possible in the last 10 years
ABB Switzerland Ltd - 9 -

Power conversion at MV levels set to grow faster than LV (20% p.a.)

 ABB Switzerland Ltd - 10 -

SELF- COMMUTATED INVERTERS

Basic Topologies
R L S1 DclampLs S3 S5

IGCT Inverter

VR

Cclamp

Clamp circuit

S2

S4

S6 FWD6

FWD1

S1

S3

S5

ABB Switzerland Ltd - 11 -

VDC S2 S4 S6

IGBT Inverter

Turn-on waveforms for IGCTs and IGBTs

Eon circuit = (t 2 t 0) Vdc ( Iload + Irr) 2 .... (1)
Vswitch or L = VDC Iload Ipk di/dt|on IFWD
Vswitch =

Iswitch

f(t) ton t0
ABB Switzerland Ltd - 12 -

t1

t2

Irr

t3

E on device I load V switch ( t ). dt ............. ( 2 )

t2

t3

 ABB Switzerland Ltd - 13 -

DEVICES

 ABB Switzerland Ltd - 14 -

IGBTs

IGBTs key features

Transistors with insulated gate Allow dv/dt and di/dt control via gate signal (losses) High on-state voltage (transistor) High turn-on losses (no snubber) Low gate power requirements (voltage control) No passives required (independant dv/dt and di/dt control)

ABB Switzerland Ltd - 15 -

HiPak High Power IGBT Modules

Voltage 2500V 3300V 3300V 6500V

Current 1200A 1200A 1200A 600A

Type Single Single Single Single

Part Number 5SNA 1200E250100 5SNA 1200E330100 5SNA 1200G330100* 5SNA 0600G650100*

ABB Switzerland Ltd - 16 -

Vce 125C 3.1V 3.8V 3.8V 4.7V

VF 125C 1.8V 2.35V 2.35V 4.0V

Eoff 125C 1.25J 1.95J 1.95J 3.5J

Eon 125C 1.15J 1.89J 1.89J 4.0J

Vdc 1250V 1800V 1800V 3600V

* High voltage version

AlSiC base-plate & AlN substrate

StakPak - stackable press-packs (collector side)

StakPak-H4: 2.5 kV/1300 to 3000 A StakPak-L2: 4.5 kV/600 to 1000 A

StakPak-J6: 4.5 kV/2000 to 3000 A

ABB Switzerland Ltd - 17 -

StakPak-H6: 2.5 kV/ 2000A to 3000 A

IGBT Press-packs
molybdenum ceramic copper inert gas

Conventional IGBT presspack: requires tight mechanical tolerances silicon

chip

close-up
copper

module lid (copper)

sub-module frame (polymeric) current bypass

module outer frame (fibreglass reinforced polymer) spring washer pack

ABB Switzerland Ltd - 18 -

StakPak IGBT presspack with individual springs: suitable for long stacks with compounded tolerances
x

silicon chip silicon gel

base-plate

StakPak HVDC Valve

Long stacks would require very tight mechanical tolerances to ensure identical force on each chip in each housing:

on assembly over time with temperature cycling with shock and vibration

ABB Switzerland Ltd - 19 -

 ABB Switzerland Ltd - 20 -

IGBT Trends

IGBT Trends

Higher voltages Higher Safe Operating Area (SOA) Softer (controlled) switching

ABB Switzerland Ltd - 21 -

Soft switching: 3.3kV SPT* IGBT/Diode chip-set

110 100 90 80 70 Ic (A), Vge (V) 60 50 40 30 20 10 0 -10 -20 Time [250 nsec/div] 150
125 100 75 50 25 IF (A) 0 -25 -50 -75 -100 -125 -150 Time [250 nsec/div] IF VR

2200 Vce 2000 1800 1600 1400 Ic 1200 Vce (V) 1000 800 600 Vge 400 200 0 -200 -400
2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 VR (V)

IGBT Turn-off Vcc= 1800V Ic= 50A RGoff= 33ohm Ls= 2.4H Tj= 125C

ABB Switzerland Ltd - 22 -

Diode Turn-off VR= 1800V IF= 100A RGon= 33ohm Ls= 2.4H Tj= 125C

* Soft Punch Through

Soft switching: 8 kV IGBT PT vs SPT

90 80 70

5000 4500 4000 3500 3000

50 2500 40 30 20 10

high di/dt giving rise to EMI issues

conventional PT device SPT

2000 1500 1000 500 0 10.0

ABB Switzerland Ltd - 23 -

0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0

time [microseconds]

voltage [V]

current [A]

60

3.3kV Diode RBSOA Performance

3.3kV/100A Diode RBSOA during Reverse Recovery VR= 2500V, IF= 200A, di/dt=1000A/s, Ls= 2.4H, Tj= 125C
250 200 150 100 50 SSCM Inom inal IF = 2 x Inom inal 5500 5000 4500 4000 3500

VR (V)

IF (A)

0 -50 VR

3000 2500 2000 1500 Dynam ic Avalanche 1000 500 Tim e [250 nsec/div] 0

-100 -150 -200

ABB Switzerland Ltd - 24 -

-250 -300

Peak Power = 0.8 MW/cm2

No clamp, no snubber

4.5kV IGBT RBSOA Performance

4.5kV/40A IGBT RBSOA during Turn-off Vcc= 3600V, Ic= 120A, RG= 0ohm, Ls= 12H, Tj= 125C
220 200 180 160
Ic (A), Vge (V)

5500 SSCM 5000 4500 4000 Vce Ic = 3 x Inominal 3500 3000 2500 Dynamic Avalanche Inominal 2000 1500 1000 500 Vge Time [250 nsec/div] 0 -500
Vce (V)

140 120 100 80 60 40

ABB Switzerland Ltd - 25 -

20 0 -20

Peak Power = 0.5 MW/cm2

No Clamp, No Snubbers

6.5kV IGBT RBSOA Performance

6.5kV/2x25A IGBT RBSOA during Turn-off Vcc= 4500V, Ic= 100A, RG= 0ohm, Ls= 20H, Tj= 125C
140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 -1 0 -2 0 SSCM Ic = 2 x In o m in a l V ce 7000 6500 6000 5500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 -5 0 0 -1 0 0 0

Ic (A), Vge (V)

Vce (V)

In o m in a l

D yn a m ic A v a la n c h e

ABB Switzerland Ltd - 26 -

Vge T im e [2 5 0 n s e c /d iv ]

Peak Power = 0.25 MW/cm2

No Clamp, No Snubbers

6.5kV IGBT Short Circuit Performance

6.5kV/25A IGBT SCSOA during Short Circuit Vcc= 4500V, Icpeak= 290A, VGE= 18V, Ls= 2.4H, Tj= 25C
300 275 250 225 200 175
Ic (A)

6000

Ic > 10 x Inominal Vce

5500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500
Vce (V)

150 125 100 75 50

ABB Switzerland Ltd - 27 -

25 0 Time [2 usec/div]

Peak Power = 1.35 MW/cm2

No Clamp, No Snubbers

3.3kV IGBT Module RBSOA Performance

3.3kV/1200A IGBT module during Turn-off (24 IGBTs) Vcc= 2600V, Ic= 5000A, RG= 1.5ohm, Ls= 280nH, Tj= 125C

ABB Switzerland Ltd - 28 -

No clamp, no snubbers

 ABB Switzerland Ltd - 29 -

IGCTs

IGCTs key features

Thyristor with integrated gate unit Low on-state voltage (thyristor) Negligible turn-on losses (turn-on snubber) No explosive failures (fault current limitation by circuit)

ABB Switzerland Ltd - 30 -

Principle of IGCT Operation

Anode

Anode

P N

VAK
I AK

P N

Gate

P N

Gate

P N

I GK

Cathode

- VGK Cathode

ABB Switzerland Ltd - 31 -

Conducting Thyristor

Blocking Transistor

IGCT turn-off
Vd (kV) Vdm 4 3 2 1 0 -10
ABB Switzerland Ltd - 32 -

Ia (kA) anode voltage Vd Itgq anode current Ia transistor Tj = 90C 4 3 2 1 0 starts to block gate voltage Vg

thyristor

-20 Vg (V) 15 20 25 30 35 t ( s)

General turn-on waveforms for IGCTs and IGBTs

Eon-circuit
Vswitch or L = VDC Iswitch Iload IFWD
Ipk

di/dton

Vswitch = f(t)

ABB Switzerland Ltd - 33 -

ton t0 t1 t2

IRR

t3

Eon-device

1500 A IGBT turning on 1000 A from 3000 V

IC [250 A/div] 833 A/s EON = 7.4 WS

EON circuit

EON device VCE [500 V/div]

ABB Switzerland Ltd - 34 -

time [ 2 s/div]

EON-circuit = 4.1 Ws

4000 A IGCT turning on 1000 A from 3000 V

3500 3000 0.7

EON-device

0.6 0.5 0.4 0.3 0.2 Eon [Ws]

VAK, IA, [V, A]

2500 2000 1500 1000 500 0 0.E+00

1340 A/s

0.1 0 3.E-05

5.E-06

1.E-05

2.E-05

2.E-05

ABB Switzerland Ltd - 35 -

t [s]

Eon circuit = (t 2 t 0) Vdc ( Iload + Irr ) 2 .... (1)

=1.5 s 3000V 1900 A /2 = 4.3 Ws

Adjustment of dv/dt by lifetime control

4000

VAK

IA, VAK, [A, V]

3000 2000
IA

medium lifetime low lifetime high lifetime

1000 0

ABB Switzerland Ltd - 36 -

10

12

14

t [ s]

 ABB Switzerland Ltd - 37 -

Low inductance housing

4 kA/4.5 kV IGCTs
power supply connection

IGCT
all copper housing

visible LED indicators

zzzz

Status Feedback

Command Signal

optical fibre connectors

ABB Switzerland Ltd - 38 -

GCT

30 MW IGCT Power Management

ABB Switzerland Ltd - 39 -

15 + 15 MW 3-Level Back-to-Back Converter for three-phase to single-phase conversion Converter efficiency = 99.2%

4 kA/4.5 kV IGCT at 25 kHz in burst mode

5000

Anode voltage and current (V, A)

4500 4000 3500 3000 2500 2000 1500 1000 500 0 0.E+00

v I

ABB Switzerland Ltd - 40 -

2.E-04

4.E-04

6.E-04

8.E-04

1.E-03

time (s)

VDC start = 3.5 kV TJ start = 25 C

VDM peak = 4.5 kV = 0.5

ITGQ peak = 4 kA

 ABB Switzerland Ltd - 41 -

IGCT Outlook

 ABB Switzerland Ltd - 42 -

IGDT

Structure of IGDT Integrated Gate Dual Transistor

K

G1

G1

K G1

G1

N P N P
G2

G2
ABB Switzerland Ltd - 43 -

G2
G2 A
Dual Gate Turn-off Thyristor

91 mm 4.5 kV IGDT turn-off

no tail current

ABB Switzerland Ltd - 44 -

Dual-gate IGCT @ 85C - gates triggered simultaneously VDC = 2.8 kV ITGQ = 3.3 kA VDRM = 4.5 kV VTM = 2.1 V @ 4 kA/125C

IGDT Series connection: leakage current reduction

140 120 100 ID (mA) 80 60
anode gate floating (no bias)

(V DC = 2800 V)
40 20

anode gate with 20V reverse biased

ABB Switzerland Ltd - 45 -

0 75 100 125 T J (C)

140C

150

175

91 mm 4.5 kV IGDT - Leakage current control

VGK= -20V, TJ = 25C

ID - anode leakage current [mA]

35 30 25 20 15 10 5 0 0 5 10 15 20 25
IGA Anode gate current [mA]

500V 1000V 1500V 2000V 2400V

ABB Switzerland Ltd - 46 -

IGDT anode gate control of tail current

IDUT2 kA 1.0 0.8 0.6 0.4 0.2 0.0 V 2.4 2.2 2.0 1.8 1.6 1.4 300 320 340 s V1 VG1 VG2 kV kA 2.5 2.0 1.5 1.0 0.5 0.0
V 1.0 0.8 0.6 0.4 0.2 0.0 2.4 2.2 IDUT2 V1 VG1 VG2 kV 2.5 2.0 1.5 1.0 0.5 0.0

2.0

ABB Switzerland Ltd - 47 -

1.8

1.6 1.4 300 320 340 s

 ABB Switzerland Ltd - 48 -

Increased SOA

IGCT SOA improvement at 4.5 kV

38 mm reverse conducting

TODAY 250 kW/cm2

TOMORROW 1000 kW/cm2

250 kW/cm2
ABB Switzerland Ltd - 49 -

400 kW/cm2

91 mm asymmetric

6.5 kA @ 2.8 kVDC on 91 mm wafer

7000 6000

IT
Snubberless turn-off Tj = 125C, VD = 2.8kV

5 0 -5

VAK, IT [V. A]

5000 4000 3000 2000 1000 0

VAK

-10 -15 -20 -25

ABB Switzerland Ltd - 50 -

t [ s]
Developmental 4 4.5 kV IGCT with improved GU and silicon design allowing 50% SOA improvement

VGK [V]

1.3 kA @ 2.8 kVDC on 38 mm RC wafer

4.5 4 1.8 1.6

VAK [kV], P [MW]

3.5 3 2.5 2 1.5 1 0.5

Ioff P

VAK

1.4 1.2 1

TJ = 115C

0.8 0.6 0.4 0.2 0

ABB Switzerland Ltd - 51 -

0 -3 -2 -1 0 1 2 3 4 5 6 7

t [ s]
Developmental 2 4.5 kV RC_IGCT with improved GU and silicon design allowing 300% SOA improvement

Ioff [kA]

 ABB Switzerland Ltd - 52 -

10 kV IGCT

Engineering Sample of 68 mm 10 kV IGCT

ABB Switzerland Ltd - 53 -

Forward Blocking Characteristics at 25C

magnified by factor 1000: 1 A / div

ABB Switzerland Ltd - 54 -

(<17 A @ 10 kV, 25C)

Forward Blocking Characteristics at 125C

(<14 mA @ 7 kV, 125C)

ABB Switzerland Ltd - 55 -

(8-13 mA @ 6 kV, 125C, PL=50W-80W ( 5%-10% of PRP)

Turn-off Waveforms (SOA)

Operating conditions: VDC= 7kV, IA = 1000A, Tj = 85C

ABB Switzerland Ltd - 56 -

Switching characteristics: Eoff = 14.8 J, VAK,max = 8 kV, toff = 8s, tf = 1s, ttail = 5s, 250 kW/cm2

 ABB Switzerland Ltd - 57 -

Conclusions

SOA Limits of HV Devices are increasing

I
Pushing the RBSOA Limits Device Capability
nom

nxI 2xI

New Limits
nom State-Of-The-Art Limits

Vrated
ABB Switzerland Ltd - 58 -

VSSCM

Under RBSOA operational conditions

Devices withstands dynamic avalanche mode IGBTs withstands SSCM mode Devices achieve the ultimate square SOA behaviour

Switching-Self-Clamping-Mode SSCM
dv/dt Dynamic Avalanche Self Clamping

IC

VDC

di

VSSCM VDC = dt LS

ABB Switzerland Ltd - 59 -

IGBT SOA turn-off waveforms including SSCM

devices start to limit voltage during turn-off over-voltage safely reaches the static breakdown after turn-off

For high power conversion, only two devices possible today:

IGBT IGCT

Safe Operating Area is increasing from 250 kW/cm2 to 1 MW/cm2 IGDT offers possibility of high voltage devices with low losses (future?)

ABB Switzerland Ltd - 60 -

 ABB Switzerland Ltd - 61 -

Challenges

Challenges for HV Power ToDs

High voltage devices present following challenges:

Dynamic Avalanche ruggedness (for reliable operation) Short Circuit Failure Modes (IGBT) and fault interruption (IGCT) Design Trade-off between Losses and SOA Critical Punch-Through voltages (for controllable voltage, low EMI) High DC link voltage (leakage stability, cosmic ray withstand) Large inductance and overshoot voltages in HV power systems High frequency (limited by losses, TJ)

ABB Switzerland Ltd - 62 -

Challenges for this decade

10 kV switches with 1 kHz snubberless operation

(for the 6.9 kVRMS MV line for drives and power conditioners)

Snubberless series operation

(static and dynamic for MV lines > 6.9 kVRMS)

Power supply free operation

(autogenous power supply for series connection)

ABB Switzerland Ltd - 63 -

System cost-reduction
(e.g. pay-back times 1 year for MV Drives)

Reduced thermal resistance and increased TJ losses?

Reduced