N

2N5401
C C BE

2N5401 / MMBT5401

Discrete POWER & Signal Technologies

MMBT5401

TO-92

SOT-23
Mark: 2L

PNP General Purpose Amplifier

This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.

Absolute Maximum Ratings*

Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
150 160 5.0 200 -55 to +150

Units
V V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5401 625 5.0 83.3 200

Max
*MMBT5401 350 2.8 357

Units
mW mW/ C C/W C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2N5401 / MMBT5401

PNP General Purpose Amplifier

(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, I E = 0 I E = 10 A, I C = 0 VCB = 120 V, IE = 0 VCB = 120 V, IE = 0, TA = 100C VEB = 3.0 V, IC = 0 150 160 5.0 50 50 50 V V V nA A nA

ON CHARACTERISTICS*
hFE DC Current Gain I C = 1.0 mA, VCE = 5.0 V I C = 10 mA, VCE = 5.0 V I C = 50 mA, VCE = 5.0 V I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA 50 60 50 240 0.2 0.5 1.0 1.0 V V V V

VCE(sat ) VBE( sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

fT Cobo NF Current Gain - Bandwidth Product Output Capacitance Noise Figure I C = 10 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz I C = 250 A, VCE = 5.0 V, RS = 1.0 k, f = 10 Hz to 15.7 kHz 100 300 6.0 8.0 MHz pF dB

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0 Vtf=0 Xtf=0 Rb=10)

2N5401 / MMBT5401

PNP General Purpose Amplifier

(continued)

Typical Characteristics

vs Collector Current
200

V CESAT- COLLECTOR-EMITTER VOLTAGE (V)

Typical Pulsed Current Gain

- TYPICAL PULSED CURRENT GAIN

Collector-Emitter Saturation Voltage vs Collector Current

0.4 = 10

V CE = 5V
150
125 C 25 C - 40 C

0.3

100

0.2
125 C

25 C

50

0.1
- 40 C

FE

0 0.0001

0.001

0.01

0.1

0 0.1

I C - COLLECTOR CURRENT (A)

1 10 I C - COLLECTOR CURRENT (mA)

P 74

100

VBE(ON) - BASE-EMITTER ON VOLTAGE (V)

VBESAT- BASE-EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current

1

Base-Emitter ON Voltage vs Collector Current

1

0.8

- 40 C 25 C

0.8

- 40 C 25 C

0.6
125 C

0.6
125 C

0.4
= 10

0.4

V CE = 5V

0.2 0.1 IC

1 10 - COLLECTOR CURRENT (mA)

P 4

100

0.2 0.1

1 10 I C - COLLECTOR CURRENT (mA)

P 4

100

Collector-Cutoff Current vs Ambient Temperature

I CBO- COLLECTOR CURRENT (nA) 100
V CB = 100V

10

0.1

25

50 75 100 125 T A - AMBIENT TEMPERATURE (C)

P 4

150

BV CER - BREAKDOWN VOLTAGE (V)

Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base

220

210

200

190

180

170 0.1 1 10 100 1000

RESISTANCE (k )

2N5401 / MMBT5401

PNP General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Input and Output Capacitance vs Reverse Voltage

f = 1.0 MHz CAPACITANCE (pF)
60

Power Dissipation vs Ambient Temperature

700 PD - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
SOT-23 TO-92

80

40

C eb
20

C cb
0 0.1 1 10 100

V R - REVERSE BIAS VOLTAGE(V)

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