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DigitalICDesignandArchitecture
MOS Transistor MOS Transistor MOSTransistor MOSTransistor
Goal of this chapter
Present intuitive understanding of device
operation
Introduction of basic device equations of PN
junction junction
Introduction of basic device equations of FET
Analysis of secondary and deep-sub-micron
effects
Review: ideal / non-ideal switch
Properties of Si Properties of Si PropertiesofSi PropertiesofSi
PropertiesofSi
covalent bonding in the Si
crystal, veiwed along a <100>
direction
EnergybanddiagramofSi:
Eg=1.1eV
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Typical band structures at 0 K
A. Insulators have large band gaps which prevents electrons to jumpfrom valence to conduction
band. B. Semiconductors have smaller band gaps such that electrons can be thermally excited to
the conduction band C. In metals, large number of electrons exist in the valence band.
Energyband model and chemical bond model of
Doping of Silicon
gy
dopants in semiconductors: (a) donation of electrons
fromdonor level to conduction band; (b) acceptance of
valence band electrons byan acceptor level, and the
resulting creation of holes; (c) donor and acceptor
atoms in the covalentbonding model of a Si crystal.
Energy Band Diagram of p-type
Silicon
ln
i
p
A
n kT
q N
| =
F i
F
E E
q
|

=
J unctionbetween two materials
Two materials in intimate contact at equilibrium.
Note: Since the net motion of electrons is zero, the equilibrium Fermi
level must be constant throughout.
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PN J unction: Energy Band
l
d
N N kT
V
0 2
ln
a d
i
N N kT
V
q n
=
1/2
2
( )
o a d
a d
V N N
W
q N N
c ( +
=
(

PN J unction Under External Bias
MOSFET Energy MOSFET Energy MOSFETEnergy MOSFETEnergy
BandDiagram BandDiagram
Two terminal MOS Structure
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Energy Band Diagram of FET
Two-Terminal MOS Structure with External
Bias
ThreeRegionsofOperation:
1.AccumulationRegion:VG<0
2.DepletionRegion:VG>0,small
3.InversionRegion:VG>0,large
Two-Terminal MOS Structure Depletion Region Two-Terminal MOS Structure Inversion Region
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Two-Terminal MOS Structure Energy Band
Diagram
Bending of the semiconductor bands at the onset of strong inversion:
the surface potential f
s
is twice the value of f
F
in the neutral p material.
Two-Terminal MOS Structure Depletion Region
Two-Terminal MOS Structure Inversion Region
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MOSFET I MOSFET IVV MOSFETI MOSFETI V V
Characteristics Characteristics
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FET Band Diagram at Equilibrium
MOS Operation: A Qualitative View
n-channel MOSFET cross-sections under differentoperating conditions: (a) linear
region for V
G
>V
T
and V
D
<(V
G
- V
T
); (b) onset of saturation at pinch-off, V
G
>V
T
and
V
D
=(V
G
- V
T
); (c) strong saturation, V
G
>V
T
and V
D
>(V
G
- V
T
).
Gradual Channel Approximation Gradual Channel Approximation
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Gradual Channel Approximation I-V Equations of NFET
I-V Equations of NFET NFET in saturation region
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NFET in saturation region: 2
nd
order effects NFET in saturation region: complete
NFET equations PMOS and NMOS equations
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MOSFET Scaling MOSFET Scaling MOSFETScaling MOSFETScaling
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Scaling Effects
MOSFET MOSFET MOSFET MOSFET
Capacitance Capacitance
Models Models
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MOSFET SaturationRegion
Capacitance Summary
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Drain/Source Capacitance Drain/Source Capacitance
Depletion Region Capacitance
Depletion Region Capacitance
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Depletion Region Capacitance
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