EXPERIMENT NO- 7 AIM:To draw the (i) Drain characteristics (ii) Transfer characteristics Of N-channel Metal o ide field

effect transistor (MO!"ET)

APPARAT#! RE$#IRED : E %eri&ental 'it (olt&eter (olt&eter A&&eter -onnectin. /ire -irc0it Dia.ra&:
2N 317 1k G D IC 1k

)-*)(olt )-,( )-*)&A

)+Nos )+Nos )+Nos

0 -2 0 m A

VGS 0 - 5 V o lt D C 0 - 5 V D C VDS 0 - 2 0 V o lt D C

0 -1 2 V D C

-irc0it Dia.ra& of N -hannel MO!"ET (De%letion &ode)

2N 317 1k G D

IC

1k

0 -2 0 m A

VGS 0 - 5 V D C 0 - 5 V o lt D C VDS 0 - 2 0 V o lt D C

0 -1 2 V D C

-irc0it Dia.ra& of N -hannel MO!"ET (E &ode)

Theory MO!"ET is a three ter&inal de1ice(drain2 so0rce2 .ate)si&ilar to 34T5 The difference 6etween the& is that the MO!"ET is a 1olta.e controlled de1ice 2whereas 34T is a c0rrent controlled de1ice5 "i.0re 7-+: The Metal O ide "ield Effect Transistor(NTE 8+*)Drain -haracteristics: /hereas for 34T the relationshi% 6etween an o0t%0t %ara&eter2 Ic2 and an in%0t %ara&eter2 I62 is .i1en 69 a constant :2 the relationshi% in MO!"ET 6etween an o0t%0t %ara&eter 2Id and an in%0t %ara&eter2 (.s is &ore co&%le 5 In the sat0ration re.ion2 there e ists a s;0are-law transfer relationshi%5 Transcond0ctance -haracteristics: In the transfer characteristics of a two %ort networ<2 the in%0t %ara&eter is chan.ed and its effect on the o0t%0t %ara&eter is o6ser1ed5 !i&ilarl9 MO!"ET can 6e treated as a two %ort nonlinear networ<5 The transfer characteristics wherein the in%0t %ara&eter is the 1olta.e across .ate and so0rce2 and the o0t%0t %ara&eter is the drain c0rrent are called the trans-cond0ctance characteristics5 The transfer .ain is nothin. 60t cond0ctance To draw the Drain -haracteristics The t9%ical Drain characteristics are shown in fi.5 +

Id (mA)

VGS=0V VGS = 1V

(D! In order to draw the a6o1e characteristics %erfor& followin. ste%s:

PRO-ED#RE:: +5 *5 85 @5 ,5 -onnect the circ0it as shown in fi.5 !et (=! > )(olt5 'ee% )-,(olt 1aria6le %ower s0%%l9 at anticloc< wise direction for &a<in. (=! > )(olt5 Now increase the (D! in ste% sa9 +1olt startin. fro& ?ero and o6ser1e the corres%ondin. Drain -0rrent (ID) in &ili a&&eter5 Re%eat ste% * for different (=! 1al0e sa9 -)5,(2-+(2 -+5,2 -*( Plot the .ra%h 6etween (D! 1s ID To draw the transfer characteristics The t9%ical Drain characteristics are shown in fi.5 +

TRANSFER CHARACTERISTICS:

ID ( &A)

(D! > -onstant

"i.5 +

(=! (1)

In order to draw the a6o1e characteristics %erfor& followin. ste%s: +5 *5 85 @5 The circ0it will 6e sa&e for o6tain the transfer characteristics5 !et the (D! > 8(5 69 1ar9in. the ) -+*(olt 1aria6le %ower s0%%l95 Now increases the (=! in ste% sa9 -)5,(olt startin. fro& ?ero and o6ser1e the corres%ondin. drain c0rrent ID 0ntil ID 6eco&e ?ero5 Re%eat ste% * for different 1al0e of (D!5

,5

Plot the .ra%h 6etween (=! 1s ID5

O3!ER(ATION TA3AE "OR DRAIN -BARA-TERI!TI-! (=! > )(olt (D!((olt) ID (&A) ) )5, + +5, * *5, 8 85, @ @5, , 7 7 C (=! > )5,(olt (D!((olt ID (&A) (=! >-+(olt (D!((olt ID (&A) (=! > -*(olt (D!((olt ID (&A)

O3!ER(ATION TA3AE "OR TRAN!"ER -BARA-TERI!TI-!

(=! ((olt) ) -)5, -+ -+5, -* -*5, -8 -85, -@ -,

(D! > 8(olt ID (&A)

(=! ((olt) ) -)5, -+ -+5, -* -*5, -8 -85, -@ -,

(D! > ,(olt ID (&A

-alc0lation D The various parameters of a MOSFET are: 1.A- DRAIN RE!I!TAN-E2 rd : It is the resistance between drain and source terminals when MOSFET is in the Pinch off re!ion. rd " chan!e in #$S % chan!e in I$. &.TRAN!-OND#-TAN-E (.&): Slope of transfer characteristic. !m " chan!e in I$% chan!e in #'S (.AMPAI"I-ATION "A-TOR: It is !iven b) *.F. " +han!e in #$S % +han!e in #'S. ,5D- DRAIN RE!I!TAN-E2 Rds: It is !iven b) .$S " #$S%I$S

Res0lt .A- DRAIN RE!I!TAN-E

>---------------------

TRAN!-OND#-TAN-E (.&) >--------------------AMPAI"I-ATION "A-TOR >-----------------------D- DRAIN RE!I!TAN-E2 R >------------------------

PRE-A#TION!:+5 Do not e ceed the ID drain c0rrent +)&A5 *5 Ta<e %ro%er care of ter&inates of MO!"ET while fi in. in the 6oard5