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Philips Semiconductors Linear Products Product specification

Function generator NE/SE566

DESCRIPTION PIN CONFIGURATIONS


The NE/SE566 Function Generator is a voltage-controlled oscillator
of exceptional linearity with buffered square wave and triangle wave D, N Packages
outputs. The frequency of oscillation is determined by an external
resistor and capacitor and the voltage applied to the control terminal. GROUND 1 8 V+
The oscillator can be programmed over a ten-to-one frequency NC 2 7 C1
range by proper selection of an external resistance and modulated
SQUARE WAVE OUTPUT 3 6 R1
over a ten-to-one range by the control voltage, with exceptional
linearity. TRIANGLE WAVE OUTPUT 4 5 MODULATION INPUT

TOP VIEW

FEATURES
• Wide range of operating voltage (up to 24V; single or dual)
APPLICATIONS
• High linearity of modulation
• Tone generators
• Highly stable center frequency (200ppm/°C typical)
• Frequency shift keying
• Highly linear triangle wave output
• FM modulators
• Frequency programming by means of a resistor or capacitor,
voltage or current • Clock generators
• Frequency adjustable over 10-to-1 range with same capacitor • Signal generators
• Function generators

ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline (SO) Package 0 to +70°C NE566D 0174C
14-Pin Ceramic Dual In-Line Package (CERDIP) 0 to +70°C NE566F 0581B
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE566N 0404B
8-Pin Plastic Dual In-Line Package (DIP) -55°C to +125°C SE566N 0404B

BLOCK DIAGRAM
V+

R1

6 8
VC SCHMITT
CURRENT BUFFER
SOURCES TRIGGER AMPLIFIER 3
MODULATION 5
INPUT

BUFFER 4
AMPLIFIER
7

C1

April 15, 1992 398 853-0910 06454


Philips Semiconductors Linear Products Product specification

Function generator NE/SE566

EQUIVALENT SCHEMATIC
R1
6 (EXTERNAL) 8

V+
5

VC

C1 4 3
(EXTER–
NAL)

5kΩ 1

GROUND

ABSOLUTE MAXIMUM RATINGS


SYMBOL PARAMETER RATING UNIT
V+ Maximum operating voltage 26 V
VIN, VC Input voltage 3 VP-P
TSTG Storage temperature range -65 to +150 °C
TA Operating ambient temperature range
NE566 0 to +70 °C
SE566 -55 to +125 °C
PD Power dissipation 300 mW

April 15, 1992 399


Philips Semiconductors Linear Products Product specification

Function generator NE/SE566

DC ELECTRICAL CHARACTERISTICS
TA=25°C, VCC=±6V, unless otherwise specified.
SE566 NE566
SYMBOL PARAMETER UNIT
Min Typ Max Min Typ Max
General
TA Operating ambient temperature range -55 125 0 70 °C
VCC Operating supply voltage ±6 ±12 ±6 ±12 V
ICC Operating supply current 7 12.5 7 12.5 mA
VCO1
fMAX Maximum operating frequency 1 1 MHz
Frequency drift with temperature 500 600 ppm/°C
Frequency drift with supply voltage 0.1 1 0.2 2 %/V
Control terminal input impedance2 1 1 MΩ
FM distortion (±10% deviation) 0.2 0.75 0.4 1.5 %
Maximum sweep rate 1 1 MHz
Sweep range 10:1 10:1
Output
Triangle wave output
impedance 50 50 Ω
voltage 1.9 2.4 1.9 2.4 VP-P
linearity 0.2 0.5 %
Square wave input
impedance 50 50 Ω
voltage 5 5.4 5 5.4 VP-P
duty Cycle 45 50 55 40 50 60 %
tR Rise time 20 20 ns
tF Fall Time 50 50 ns
NOTES:
1. The external resistance for frequency adjustment (R1) must have a value between 2kΩ and 20kΩ.
2. The bias voltage (VC) applied to the control terminal (Pin 5) should be in the range V+≤VC≤V+.

April 15, 1992 400


Philips Semiconductors Linear Products Product specification

Function generator NE/SE566

TYPICAL PERFORMANCE CHARACTERISTICS

Normalized Frequency as a Normalized Frequency as a


ÇÇÇÇ Change in Frequency as a

ÇÇÇÇ
Function of Control Voltage Function of Resistance (R1) Function of Temperature

ÇÇÇÇÇÇÇÇÇ
2.5 100 +2.5
V+ = 12 VOLTS

ÇÇÇÇÇÇÇÇÇ
V+ = 12 VOLTS

CHANGE IN FREQUENCY — (%)


+2.0
NORMALIZED FREQUENCY

V+ = 12 VOLTS

RESISTANCE (R1 ) — (KΩ )


50 VC = 10 VOLTS
2.0 VC = 10 VOLTS +1.5

ÇÇÇÇÇÇÇÇÇ
+1.0
20

ÇÇÇÇÇÇÇÇÇ
1.5 +0.5 TYPICAL
10 0

ÇÇÇÇÇ
1.0 –0.5

ÇÇÇÇÇ
5
–1.0
0.5 –1.5
2
–2.0
1 –2.5
0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 0.2 0.5 1 2 5 10 –75 –50 –25 0 +25 +50 +75 +100 +125
CONTROL VOLTAGE NORMALIZED FREQUENCY TEMPERATURE — (oC)
(BETWEEN PIN 8 AND PIN 5) — VOLTS

Power Supply Current as a Frequency as a Function


Function of Supply Voltage of Capacitance (C1) VCO Output Waveforms
F

OUTPUT 3 — V OUTPUT PIN 4 — V


20.0 10
V+ = 12 VOLTS
1 (Cµ ) —

Rt = 4kΩ V+ = 12 VOLTS 6
MAXIMUM
SUPPLY CURRENT — mA

17.5 VC = 10 VOLTS 5
1.0
R1 = 4k 4
15.0 TYPICAL
CAPACITANCE

0.1
12.5 12
0.01 10
10.0 8
0.001 6
7.5
4
5 0.0001
10 13 16 19 22 25
1 10 102 103 104 105 106
SUPPLY VOLTAGE — V FREQUENCY — Hz

OPERATING INSTRUCTIONS 2 [(V )  (V C)]


fO 
The NE/SE566 Function Generator is a general purpose R1 C1 V 
voltage-controlled oscillator designed for highly linear frequency
modulation. The circuit provides simultaneous square wave and and R1 should be in the range 2kΩ< R1<20kΩ.
triangle wave outputs at frequencies up to 1MHz. A typical
A small capacitor (typically 0.001µF) should be connected between
connection diagram is shown in Figure 1. The control terminal (Pin
Pins 5 and 6 to eliminate possible oscillation in the control current
5) must be biased externally with a voltage (VC) in the range
source.
V+≤VC≤V+
If the VCO is to be used to drive standard logic circuitry, it may be
where VCC is the total supply voltage. In Figure 1, the control desirable to use a dual supply as shown in Figure 2. In this case the
voltage is set by the voltage divider formed with R2 and R3. The square wave output has the proper DC levels for logic circuitry. RTL
modulating signal is then AC coupled with the capacitor C2. The can be driven directly from Pin 3. For DTL or TTL gates, which
modulating signal can be direct coupled as well, if the appropriate require a current sink of more than 1mA, it is usually necessary to
DC bias voltage is applied to the control terminal. The frequency is connect a 5kΩ resistor between Pin 3 and negative supply. This
given approximately by increases the current sinking capability to 2mA. The third type of

April 15, 1992 401


Philips Semiconductors Linear Products Product specification

Function generator NE/SE566

interface shown uses a saturated transistor between the 566 and


the logic circuitry. This scheme is used primarily for TTL circuitry
which requires a fast fall time (<50ns) and a large current sinking
capability.
1.5K R1 5K
.001µF
V+ RTL
10K DTL OR T2L
R2 R1 6 8
.001µF 3 WITH FAST
1.5K VC 5 FALL TIME
SE/NE 566
4 DTL
10K 7 1 &
C2 5 6 84
C1
5K T 2L
VC
SE/NE 566
R3 7 1 3
–6 VOLTS
10K
C1

Figure 2.

Figure 1.

April 15, 1992 402

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