VISHAY

MCT2/ MCT2E
Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

Features
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry Standard Dual-in line 6-pin package A 1 6 B

• 5300 VRMS isolation test voltage C 2 5 C

NC 3 4 E
Agency Approvals
• UL - File No. E52744 System Code H or J
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending i179004

Available with Option 1

• CSA 93751 DIN EN 60747-5-5 pending partial discharge isolation

• BSI IEC60950 IEC60965 specification is available for these families by ordering
option 1.
Applications These isolation processes and the Vishay ISO9001
quality program results in the highest isolation perfor-
AC mains detection
mance available for a commercial plastic phototrans-
Reed relay driving istor optocoupler.
Switch mode power supply feedback The devices are available in lead formed configura-
Telephone ring detection tion suitable for surface mounting and are available
Logic ground isolation either on tape and reel, or in standard tube shipping
Logic coupling with high frequency noise rejection containers.

Description Footnotes
Standard Single Channel Phototransistor Couplers. Designing with data sheet is covered in Application Note 45.
The MCT2/ MCTE family is an Industry Standard Sin-
gle Channel Phototransistor .
Order Information
Each optocoupler consists of gallium arsenide infra-
Part Remarks
red LED and a silicon NPN phototransistor.
MCT2 CTR 60 (> 20) %, DIP-6
These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 VRMS isolation test volt- MCT2E CTR 60 (> 20) %, DIP-6
age. MCT2-X009 CTR 60 (> 20) %, SMD-6 (option 9)
This isolation performance is accomplished through For additional information on the available options refer to
Vishay double molding isolation manufacturing pro- Option Information.
cess. Compliance to DIN EN 60747-5-2(VDE0884)/

Document Number 83731 www.vishay.com

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Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Parameter Test condition Symbol Value Unit
Reverse voltage VR 6.0 V
Forward current IF 60 mA
Surge current t ≤ 10 µs IFSM 2.5 A
Power dissipation Pdiss 100 mW

Output
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown VCEO 70 V
Emitter-base breakdown BVEBO 7.0 V
voltage
Collector current IC 50 mA
t < 1.0 ms IC 100 mA
Power dissipation Pdiss 150 mW

Coupler
Parameter Test condition Symbol Value Unit
Isolation test voltage VISO 5300 VRMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between ≥ 0.4 mm
emitter and detector
Comparative tracking index per 175
DIN IEC 112/VDE0303,part 1
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tstg - 55 to + 100 °C
Junction temperature Tj 100 °C
Soldering temperature max. 10 s dip soldering: Tsld 260 °C
distance to seating plane
≥ 1.5 mm

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VISHAY
MCT2/ MCT2E
Vishay Semiconductors

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 20 mA VF 1.1 1.5 V

Reverse current VR = 3.0 V IR 10 µA

Capacitance VR = 0, f = 1.0 MHz CO 25 pF

Output
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter breakdown IC = 1.0 mA, IF = 0 mA BVCEO 30 V
voltage
Emitter-collector breakdown IE = 100 µA, IF = 0 mA BVECO 7.0 V
voltage
Collector-base breakdown IC = 10 µA, IF = 0 mA BVCBO 70 V
voltage
Collector-emitter leakage VCE = 10 V, IF = 0 mA ICEO 5.0 50 nA
current
Collector-base leakage current VCE = 10 V, IF = 0 mA ICBO 20 nA
Collector-emitter capacitance VCE = 0 CCE 10 pF

Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Resistance, input to output RIO 100 GΩ
Capacitance (input-output) CIO 0.5 pF

Current Transfer Ratio

Parameter Test condition Symbol Min Typ. Max Unit
DC Current Transfer Ratio VCE = 10 V, IF = 10 mA CTRDC 20 60 %

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MCT2/ MCT2E VISHAY
Vishay Semiconductors

Switching Characteristics
Parameter Test condition Symbol Min Typ. Max Unit
Switching time IC = 2 mA, RL = 100 Ω, ton, toff 10 µs
VCE = 10 V

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1.4 1.5
Normalized to:
1.3 Vce=10 V, IF=10 mA, TA=25°C

NCTR - Normalized CTR

TA = –55°C CTRce(sat) Vce=0.4 V
VF - Forward Voltage - V

1.2
1.0
TA = 25°C TA=50°C
1.1

1.0
0.5
0.9 TA = 85°C
NCTR(SAT)
0.8 NCTR

0.7 0.0
.1 1 10 100
.1 1 10 100
IF - Forward Current - mA IF- LED Current - mA
i4n25_01 i4n25_03

Fig. 1 Forward Voltage vs. Forward Current Fig. 3 Normalized Non-saturated and Saturated CTR vs. LED
Current

1.5 1.5
Normalized to: Normalized to:
Vce=10 V, IF=10 mA, TA=25°C Vce=10 V, IF=10 mA, TA=25°C
NCTR - Normalized CTR

CTRce(sat) Vce=0.4 V CTRce(sat) Vce=0.4 V

NCTR - Normlized CTR

1.0 1.0
TA=25°C TA=70°C

0.5
0.5
NCTR(SAT)
NCTR(SAT) NCTR
NCTR 0.0
0.0 .1 1 10 100
0 1 10 100 IF - LED Current - mA
IF - LED Current - mA
i4n25_02 i4n25_04

Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED Fig. 4 Normalized Non-saturated and saturated CTR vs. LED
Current Current

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VISHAY
MCT2/ MCT2E
Vishay Semiconductors

1.5 1.5
Normalized to: Normalized to:

NCTRcb - Normalized CTRcb

Vce=10 V, IF=10 mA, TA=25°C Vcb=9.3 V, IF=10 mA, TA=25°C
NCTR - Normalized CTR

CTRce(sat) Vce = 0.4 V

1.0 1.0
TA=85°C

0.5 0.5
25°C
NCTR(SAT) 50°C
NCTR 70°C

0.0 0.0
.1 1 10 100 .1 1 10 100
IF - LED Current - mA IF - LED Current - mA
i4n25_05 i4n25_08

Fig. 5 Normalized Non-saturated and saturated CTR vs. LED Fig. 8 Normalized CTRcb vs. LED Current and Temp.
Current

35 10
Normalized to:
30 IF=10 mA, TA=25°C
Ice - Collector Current - mA

Normalized Photocurrent

25
50°C 1
20
70°C
15
25°C 85°C
10 0.1
Nib, TA=–20°C
5 Nib, TA= 25°C
Nib, TA= 50°C
0 Nib, TA= 70°C
0 10 20 30 40 50 60 0.01
IF - LED Current - mA .1 1 10 100
i4n25_06 i4n25_09 IF - LED Current - mA

Fig. 6 Collector-Emitter Current vs. Temperature and LED Fig. 9 Normalized Photocurrent vs. IF and Temp.
Current

5 1.2
10 70°C
4
Iceo - Collector-Emitter - nA

10
NHFE - Normalized HFE

3 1.0
10 25°C
2 –20°C
10
0.8
1 Vce = 10 V
10
Typical Normalized to:
0 Ib=20 µA, Vce=10 V, TA=25°C
10
0.6
10 –1

10 –2
–20 0 20 40 60 80 100 0.4
1 10 100 1000
TA - Ambient Temperature - °C Ib - Base Current - µA
i4n25_07 i4n25_10

Fig. 7 Collector-Emitter Leakage Current vs.Temp. Fig. 10 Normalized Non-saturated HFE vs. Base Current and
Temperature

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MCT2/ MCT2E VISHAY
Vishay Semiconductors
NHFE(sat) - Normalized Saturated HFE

1.5
Normalized to:
Vce=10 V, Ib=20 µA VCC = 5.0 V
70°C 50°C T A =25°C
1.0
F=10 KHz, RL
25°C DF=50%

–20°C VO
0.5
IF=1 0 mA
Vce=0.4 V

0.0
1 10 100 1000
i4n25_11 Ib - Base Current - µA i4n25_14

Fig. 11 Normalized HFE vs. Base Current and Temp. Fig. 14 Switching Schematic

1000 2.5
IF =10 mA,TA=25°C
tPHL - Propagation Delay - µs
tPLH - Propagation Delay - µs

VCC =5.0 V, Vth=1.5 V

tPHL
100 2.0

10 1.5
tPLH

1 1.0
.1 1 10 100
RL - Collector Load Resistor - kΩ
i4n25_12

Fig. 12 Propagation Delay vs. Collector Load Resistor

IF

tD
VO tR
tPLH

VTH=1.5 V

tPHL tS tF

i4n25_13

Fig. 13 Switching Timing

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VISHAY
MCT2/ MCT2E
Vishay Semiconductors

Package Dimensions in Inches (mm)

pin one ID
3 2 1

.248 (6.30)
.256 (6.50)

4 5 6 ISO Method A

.335 (8.50)
.343 (8.70)
.300 (7.62)
.039 .048 (0.45)
.022 (0.55) typ.
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4° 18°
typ. .114 (2.90)
.031 (0.80) min. .130 (3.0)
3°–9° .010 (.25)
.031 (0.80) typ.
.018 (0.45) .035 (0.90)
.022 (0.55) .300–.347
.100 (2.54) typ. (7.62–8.81)
i178004

Package Dimensions in Inches (mm)

SMD
.343 (8.71)
.335 (8.51) Pin one I.D.

.030 (.76)

.256 (6.50) R .010 (.25)

.100 (2.54)
.248 (6.30)
.070 (1.78)
.315 (8.00) min .060 (1.52)
.435 (11.05)

.050 (1.27) typ.

ISO Method A .395 (10.03)
.375 (9.63)
.052 (1.33)
.039 .300 (7.62) 3° to 7°
.048 (1.22) typ.
(0.99)
min. .150 (3.81)
.130 (3.30) .0098 (.25)
.0040 (.10) 18°
4°
.040 (1.016) .012 (0.31)
.100 (2.54) .008 (0.20)
.020 (0.508) .315 (8.00)
i178002 min.

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MCT2/ MCT2E VISHAY
Vishay Semiconductors

Option 9
.375 (9.53)
.395 (10.03)

.300 (7.62)
ref.

.0040 (.102)
.0098 (.249) .012 (.30) typ.

.020 (.51)
.040 (1.02)
15° max.
.315 (8.00)
min. 18449

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VISHAY
MCT2/ MCT2E
Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Rev. 1.3, 19-Apr-04 9
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