Detector de luz

Este detector funciona por medio de una fotocelda, la cual junto con el potenciometro de 250 k forman un divisor de tensin. Cuando la luz incide sobre la fotocelda el amplificador operacional compara el voltaje obtenido del divisor de tensin de la fotocelda y la referencia de voltaje que tiene con el potenciometro de 00 k. !i el voltaje del divisor de la fotoceda es mayor, el amplificador polariza el transistor y el relevador se activa. "odo el circuito se alimenta con #5$ incluyendo el relevador y el amplificador operacional. %na vez armado se deba llevar a cabo un ajuste con el potenciometro de 00k y 250k para optimizar el funcionamiento. El relevador puede servir para activar una alarma u otro mecanismo &asta un m'(imo de 2)$ y 0* , sin embar+o no se recomienda colocarlo dentro de la proto si se va a ener+izar con 2) $, ya que puede resultar peli+roso.

V+

+ 5V

!1-1 V+ !1-2 VGND + 5V D1 1N4004

K1 G5L

P 1 V1060_21

1k

R1

V+

+ 5V TL082P
1

T1 BC547 10 k R3 C1 220 uF
+

R5 100 k

2 1

IC1A VGND

250 k R4

2 3

C2 1k R2 10 uF

V-

GND

K1
P

BC546/547/548/549/550

BC546/547/548/549/550
Switching and Applications
High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560

TO-92

1. Collector 2. Base 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/550 : BC548/549 Value 80 50 30 65 45 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW C C

VCEO

Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/550

VEBO IC PC TJ TSTG

Electrical Characteristics Ta=25C unless otherwise noted

Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF Parameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE=5V, IC=200A f=1KHz, RG=2K VCE=5V, IC=200A RG=2K, f=30~15000MHz 580 Min. 110 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4 10 4 4 3 6 700 720 Typ. Max. 15 800 250 600 mV mV mV mV mV mV MHz pF pF dB dB dB dB Units nA

hFE Classification
Classification hFE
2002 Fairchild Semiconductor Corporation

A 110 ~ 220

B 200 ~ 450

C 420 ~ 800

Rev. A2, August 2002

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier

August 2000

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier

General Description
These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage (BI-FET II technology). They require low supply current yet maintain a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The TL082 is pin compatible with the standard LM1558 allowing designers to immediately upgrade the overall performance of existing LM1558 and most LM358 designs. These amplifiers may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage, low input bias current, high input impedance, high slew rate and wide bandwidth. The devices also exhibit low noise and offset voltage drift.

Features
n n n n n n n n n n n Internally trimmed offset voltage: Low input bias current: Low input noise voltage: Low input noise current: Wide gain bandwidth: High slew rate: Low supply current: High input impedance: Low total harmonic distortion: Low 1/f noise corner: Fast settling time to 0.01%: 15 mV 50 pA 16nV/Hz 0.01 pA/Hz 4 MHz 13 V/s 3.6 mA 1012 0.02% 50 Hz 2 s

Typical Connection

Connection Diagram
DIP/SO Package (Top View)

00835703 00835701

Order Number TL082CM or TL082CP See NS Package Number M08A or N08E

Simplified Schematic

00835702

BI-FET II is a trademark of National Semiconductor Corp.

2004 National Semiconductor Corporation

DS008357

www.national.com