3.

46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004 Badgap Engineering: Precise Control of Emission Wavelength Wavelength Division Multiplexing Fiber Transmission Window Optical Amplification Spectrum Design and Fabrication of emitters and detectors Composition Binary, Ternay, Quaternary (alloy) semiconductors Quantum size effect Superlattices, Quantum wells, Quantum wires, Quantum dots Strain effect Lattice mismatch and thermal mismatch

Case studies 1. Emitters 2. EDFA pump light sources 3. Detectors

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Figure 1 Absorption spectrum of optical fibers Light Sources 0.7eV< Eg < 1eV for networks 1eV< Eg < 2eV for interconnects

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Figure 2

Bandgap engineering 1 Alloy composition

1. Bowing parameter Alloy Eg does not follow Vegards law (linear) 2. Substrates Alloys lattice matched to GaAs and InP cover the desired Eg range

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Figure 4

Lattice-matched InGaAsP on InP for 1.55 and 1.31 m laser diode.

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Figure 5

Bandgap engineering 2: Quantum Confinement

Dimensions < Bohr orbit in dielectric medium

Quantum size effect: En=n2h2/8mL2

Bandgap discontinuity : C= AlGaAs/GaAs C = 0.65
e1G

(Andersons rule) (0.850.570.700.65)

e2

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Figure 6

Erbium Doped Fiber Amplifier (EDFA) Pump Light Sources

1. Pump light source at 980nm Shorter wavelengths: GaAs Longer wavelengths: InP 2. Ternary alloy requires strain tuning of Eg Strained In0.2GaAs/GaAs

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Figure 7

Strain and strain relaxation (dislocations)

1. Critical layer thickness InxGaAs/GaAs 2. Strained layers GaAs/GaAs MQW LDs on GaAs substrate

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Figure 8

Biaxial-strained semiconductor bandgap

1. Deformation potentials Band extrema 2. Quantum confined states LH (light hole) HH (heavy hole)

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Figure 9

Absorption coefficient of Ge and Si

1. Choice of detector material Monolithic integration with receiver electronics

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Figure 10 Annealing effect of Ge epi on Si 1. Lattice mismatched epitaxy Misfit dislocations Threading dislocations 2. Defect reduction Morphology: low T growth Defect density: strain anneal

Direct Growth Ge-on-Si

Cyclic annealing allows for dislocation free mesas

550C

1 cycle

Ge
300C
Deposit flat Ge epilayer directly on Si by a two-step CVD process Substrate: silicon as the universal platform Glue layers Low T, high flux, post growth heat treatment

SiO2

10m

10 cycles

10m

10

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Mechanism for Defect Reduction

1.0

As Grown Ge on Si Threading Dislocation Density ~109cm-2

Normalized Dislocation Velocity (a.u)

Ea V CTE T exp kT

0.5

After Dislocation Annihilation Anneal Threading Dislocation Density = 8 106cm-2

0.0 600

650

700

750

800

850

900

Temperature, TL (C)
Silicon Microphotonics, Massachusetts Institute of Technology

11

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Effect of lattice strain in Ge layer grown on Si Bandgap change absorption property

Possible strain Compressive: lattice mismatch Lattice constant: Ge 5.66 > Si 5.43 Tensile: thermal mismatch Expansion coefficient: Ge 5.9x10-6 K-1 > Si 2.6x10-6 K-1

Thermal expansion mismatch - Bi-metal effect

Equilibrium at high temp.

Room temp. Tensile strain in Ge

Thermal expansion coefficient: Ge > Si

Figure 11 Annealing effect of Ge on Si

12

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

XRD: 0.20% 0.15 - 0.23%

Figure 12 Theoretical estimation of lattice strain in Ge and Ge band structure.

13

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

Spring 2003 M,W 2:30-4:00pm

Band Gap Engineering: Strain, Composition, and Temperature

March 15, 2004

Figure 13 Deformation potential calculation for enhanced long wavelength absorption coefficient 30 meV bandgap shrinkage and L-band optical wavelength detection

Extended Response of Ge-on-Si Strained Epitaxial Layers

C-band 10 4 L-band

Absorption Coefficient (cm-1)

Ge Band Structure

Ge/Si (MIT) Bulk Ge

0.80

Eg (lh) (eV)

10 3

1560 0.79 1580 0.78 0.77 0.76 0.75 0.0 1600 1620 1640 0.3

Wavelength(nm)

Bulk Ge Ge/Si Ge/Si/C54-TiSi2

0.1 0.2

Tensile strain shifts light hole band up in energy with respect to heavy hole band, reducing direct band gap

In plane strain (%)

10
2

1400

1450

1500

1550

1600

1650

Wavelength (nm) Strained Ge layers show absorption spectrum red shift of ~30 nm. Cannon, Jongthammanurak, Liu, MIT
15

14