Beruflich Dokumente
Kultur Dokumente
UNIT-5
Introduction to Spintronics Spin glasses, Magnetism in metals, Spin density waves Spin polarized transport Kondo effect, Kubo effect, Spin valve effect Spin relaxation and injection Spintronics memory devices and applications Magnetic dipole diodes Magnetic tunneling devices Spin diodes, spin filters and spin transistors Spin Hall bars,. spin Qbits
six decades.
With more and more electrical devices being packed into smaller and smaller spaces, the limits of physical space will prevent further expansion in the direction the microelectronics industry is currently going.
Also, volatile memory, which does not retain information upon being powered off, is significantly hindering ultrafast computing speeds.
However, a new breed of electronics, dubbed spintronics, may change all of that.
The goal of spintronics research is to eventually relieve present information technology from solely relying on the charge of electrons.
The spin degree of freedom of an electron has shown to be a very viable candidate to save the microelectronics industry from the results of Moores Law, which describes a trend of electrical components getting increasingly smaller, eventually reaching atomic scales.
Though much progress has been made, a final obstacle needs to be overcome for spintronics to emerge as dominant technology.
Spintronics is highly energy efficient, and spintronic devices generate less heat in operation than semiconductor devices.
This unique property may extend the life of Moores Law by having higher integration levels without astronomical heat generation.
Spin Electronics is neatly summarized in J. M. D. Coeys Conventional Electronics has ignored the spin of the electron.
observation that
electron spin was known about for most of the 20th Century, no technical use is made of this fact.
SPIN TRansport electrONICS or SPINTRONICS, in which the spin degree of freedom of the electron will play an important role in addition to or in place of the charge degree of freedom in mainstream electronics Spintronics is a multidisciplinary field whose central theme is the active manipulation of spin degrees of freedom in solid-state systems..
The goal of spintronics is to understand the interaction between the particle spin and its solid-state environments and to make useful devices using the acquired knowledge.
Fundamental studies of spintronics include investigations of spin transport in electronic materials, as well as of spin dynamics and spin relaxation.
What is meant by spin in spintronic? Ans Ensemble spin (Magnetisation) spin=N-N Spin Polarization ()= Spin/(N+N)
The number of electrons participating in the conduction process is different for each spin channel.
different densities of states for spin-up and spin-down implies that the susceptibility to scattering of the two spin types is different, and this in turn leads to their having different mobilitys.
the spin-up electrons are performing the share of the electrical conducting, and, moreover, that if a current is passed from such a spin-asymmetric material
For cobalt into a paramagnet like silver (where there is no asymmetry between spin channels), there is a net influx into the silver of up-spins over down-spins. Thus of up-spins appears in the silver and with it a small associated magnetic moment per volume. This is known as a spin accumulation.
The field of spin electronics or spintronics has been developed, where the coupling of electron spin and charge plays an important role.
In paramagnets, the number of up- and down-spin electrons is the same and no effect of spin appears in the electrical transport.
However, the difference in the number of up- and down-spin electrons in ferromagnets causes complex properties in which magnetism effects electrical transport and vice versa.
For example, the control of spins by an electric field and the control of electrical current by a magnetic field are fundamental issues in the field of spintronics.
Length scales (L): The fundamental properties of spintronics. There are several length scales that characterize the properties of electrons in metals.
1.
spin-flip mean free path (): The z-component of spin sz takes one of two values 1/2 and is not necessarily conserved, that is, it is time dependent due to such effects as the spinorbit interaction (SOI) and interactions between electrons.
Therefore, the length for which the spin of an electron is conserved is finite, called the spinflip mean free path and typically takes values in the range 100 nm10 m.
3.
Spin-flip time (): times the spin-flip time. Fermi wave length F: which characterizes the electronic states. In general, >> F. This length scale becomes important when interference occurs between wave functions of electrons.
The velocity of electrons on the Fermi surface is given by the Fermi velocity vF and hence the time scale for an electron with vF travelling a distance is given by t= /vF, the relaxation time.
4.
Spin Accumulation
Spin Polarization
Spin polarization is the degree to which the spin, i.e., the intrinsic angular momentum of elementary particles, is aligned with a given direction. hence to the magnetic moment, of conduction electrons in ferromagnetic metals, such as iron, giving rise to spin-polarized currents. pin polarization of electrons or of nuclei, often called simply magnetization, is also produced by the application of a magnetic field.
In a solid the spins of many electrons can act together to affect the magnetic and electronic properties of a material,
for example, a material with a permanent magnetic moment as in a ferromagnetQ. In many materials, electron spins are equally present in both the up and the down state, and no transport properties are dependent on spin.
requires generation or manipulation of a spin-polarized population of electrons, resulting in an excess of spin up or spin down electrons.
A net spin polarization can be achieved either through creating an equilibrium energy splitting between spin up and spin down such as putting a material in a large magnetic field (Zeeman effect) or the exchange energy present in a ferromagnet; or forcing the system out of equilibrium.
The period of time that such a non-equilibrium population can be maintained is known as the spin lifetime ()
In a diffusive conductor, a spin diffusion length () an also be defined as the distance over which a non-equilibrium spin population can propagate.
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Kondo effect
The Kondo effect is an unusual scattering mechanism of conduction electrons in a metal due to magnetic impurities, which contributes a term to the electrical resistivity that increases logarithmically with temperature as the temperature T is lowered (as log(T)). The resistance of some metals containing a small amount increase in Fig. The mechanism of this anomalous resistance increase remained a mystery until Jun Kondo explained in 1964 that it arises from scattering by the magnetic impurities that are antiferromagnetically correlated with spins of the conduction electrons. The temperature which marks the upturn of the resistance due to this spin interaction is called the Kondo temperature, TK. of at magnetic some low impurities was found to temperature as depicted
where (J) is exchange between the spin of the conduction electron and the localized spin on the impurity
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Case 2: the electron is scattered into the state with wave-number (k) and spin () and leaving the impurity is a spin down state () - a scattering process involving a spin flip of the impurity.
This is only an intermediate state. and we have to take into account a further scattering process to arrive at the same final state as in eq-1 in which the spin flip is reversed
means so that the scattered electron is in the state k, and the impurity is returned to the state with spin up (see figure)
We sum k over all possible intermediate states and so, according to quantum mechanics, the total matrix element for this process is given by
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Spin valve
Effect: When two or more conducting magnetic materials, whose electrical resistance can change between two values (High or Low) depending on the relative alignment of the magnetisation in the two layers. The resistance change is a result of the Giant Magneto-resistive effect. The magnetic layers align "up" or "down" depending on an external magnetic field. Principle: The principles governing spinvalve operation are purely quantum mechanical.
Generally, an electron current contains both up and down spin electrons in equal abundance. When these electrons approach a magnetized ferromagnetic layer, one where most or all contained atoms point in the same direction, one of the spin polarizations will scatter more than the other.
If the ferromagnetic layers are parallel, the electrons not scattered by the first layer will not be scattered by the second, and will pass through both.
The result is a lower total resistance (large current). However, if the layers are antiparallel, each spin polarization will scatter by the same amount, since each encounters a parallel and antiparallel layer once.
The total resistance is then higher than in the parallel configuration (small current).
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Construction: The spin valve consists of two ferromagnetic layers, separated by a Cu spacer.
One of these layers has it magnetization pinned (Strong), while in the other it is free to rotate (Soft).
The free ferromagnetic layer forms the sensing element and usually consists of Co or Co90Fe10 or a Ni80Fe20/Co or Ni80Fe20/Co90Fe10 bilayer
The pinned ferromagnetic layer (Co or Co90Fe10) is coupled by exchange to an antiferromagnet (for example Mn76Ir24, or Mn50Pt50) or a synthetic antiferromagnet (NiO/Co/Ru/Co, Mn76Ir24/Co90Fe10/Ru/Co90Fe10). Free and pinned layer easy axis can be set either parallel or antiparallel. Typical MR values for these first generations of top-pinned or bottom-pinned spin valves ranged from 6% to 10%.
Here the top-pinned or bottom-pinned designations relate to spin valves where the pinned layers are above or below the Cu spacer respectively.
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Required conditions: The blocking temperature (temperature where the exchange field vanishes) should exceed 300C, to prevent accidental de-pinning of the pinned layer during head fabrication or head life.
Another factor to take into account is the coupling field Hf between the free and pinned layers, which should not exceed 0.8 to 1.2 kA/m, to allow for proper biasing.
In above figure in Insulation layer is added between FM and SC material. Because, the depolarization processes occurring at the FM side that prevent a massive injection of spins in the semiconductor part.
This is known as the impedance mismatch problem. a spin-conserving tunnel barrier (I) at the FM/SC interface to form a FM/I/SC system, can solve such impedance mismatch to restore a significant current spin-polarization in the semiconductor part.
This results in a spin-splitting between spin-up and spin-down electro-chemical potentials as the interfacial resistance played by the tunnel junction increases up to a certain threshold value.
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Drawbacks In conclusion, spin-injection from ferromagnetic metallic electrodes into semiconductors has proven difficult. At present, effects due to spin-injection are small of the order of 1% at best.
In
some
geometries
this
might
be
due
to
an
impedance
mismatch.
If
ferromagnet/semiconductor contact is analyzed within the twocurrent model, the polarization of the majority (I)and minority (I) currents is given by
Here R (R) denotes the majority (minority) resistance and R the total resistance of the ferromagnet,
Rs the resistance of the semiconductor that is assumed to be unpolarized. In typical geometries Rs R, such that an impedance mismatch leads to a significant reduction of the spin-polarization in the whole circuit as compared to the ferromagnetic electrode.
Magnetic semiconductors: In this approach spin-injection is facilitated in a band-gap-matched semiconductor structure containing a strongly paramagnetic component, a so-called spin aligner.
electrondoped Cd0.98Mn0.02Te/CdTe, electron-doped BexMnyZn1xySe/AlGaAs and hole-doped Ga1xMnxAs/GaAs with x = 0.045. The Mn doped semiconductors are strongly paramagnetic such that electrons or holes passing through these can be easily aligned by an applied magnetic field.
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spin relaxation
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Similarly in three dimensions, four spins arranged in a tetrahedron (Figure) may experience geometric frustration. If there is an antiferromagnetic interaction between spins, then it is not possible to arrange the spins so that all interactions between spins are antiparallel.
There are six nearest-neighbor interactions, four of which are antiparallel and thus favourable, but two of which (between 1 and 2, and between 3 and 4) are unfavourable. It is impossible to have all interactions favourable, and the system is frustrated. Geometrical frustration is also possible if the spins are arranged in a non-collinear (not lying on the same line) way. If we consider a tetrahedron with a spin on each vertex pointing along the easy axis (that is, directly towards or away from the centre of the tetrahedron), then it is possible to arrange the four spins so that there is no net spin (Figure 3). This is exactly equivalent to having an antiferromagnetic interaction between each pair of spins, so in this case there is no geometrical frustration.
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This decay is non-exponential and no simple function can fit the curve of magnetization versus time adequately. This slow decay is particular to spin glasses.
If a similar test is run on a ferromagnetic substance, when the external field is removed there is a rapid change to a remanent value that then stays constant in time.
For a paramagnet, when the external field is removed the magnetization rapidly goes to zero and stays there. In each case the decay is rapid and exponential.
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Fabrication: Magnetic tunnel junctions are manufactured in thin film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized.
The junctions are prepared by photolithography. Theory: The direction of the two magnetizations of the ferromagnetic films can be switched individually by an external magnetic field.
If the magnetizations are in a parallel orientation it is more likely that electrons will tunnel through the insulating film than if they are in the oppositional (antiparallel) orientation.
Consequently, such a junction can be switched between two states of electrical resistance, one with low and one with very high resistance.
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The spin-up electrons are those with spin orientation parallel to the external magnetic field, whereas the spin-down electrons have anti-parallel alignment with the external field. The relative resistance change is now given by the spin polarizations of the two ferromagnets, P1 and P2:
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Figure shows schematically the MRAM matrix, where each cell consists of a tunnel junction. In a memory array matrix, to
selectively read a bit, current must flow through one single junction and
alternative current paths must be blocked. This can be achieved making use of current directionality in diodes or on/off transistor characteristics. In the simplest case the basic memory cell will be a diode connected in series with a tunnel junction. schematically Figure the shows vertical
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Principle: A particular cell is (typically) selected by powering an associated transistor that switches current from a supply line through the cell to ground.
Due to the magnetic tunnel effect, the electrical resistance of the cell changes due to the orientation of the fields in the two plates.
By measuring the resulting current, the resistance inside any particular cell can be determined, and from this the polarity of the writable plate.
Typically if the two plates have the same polarity this is considered to mean "1", while if the two plates are of opposite polarity the resistance will be higher and this means "0".
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It is also worth comparing MRAM with another common memory system, flash RAM. Like MRAM, flash does not lose its memory when power is removed, which makes it very common as a "hard disk replacement" in small devices such as digital audio players or digital cameras. When used for reading, flash and MRAM are very similar in power requirements. However, flash is re-written using a large pulse of voltage (about 10 V) that is stored up over time in a charge pump, which is both power-hungry and time-consuming. In addition, the current pulse physically degrades the flash cells, which means flash can be written only to some finite number of times before it must be replaced.
In contrast, MRAM requires only slightly more power to write than read, and no change in the voltage, eliminating the need for a charge pump. This leads to much faster operation, lower power consumption, and an indefinitely long "lifetime".
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Although MRAM is not quite as fast as SRAM, it is close enough to be interesting even in this role. Given its much higher density, a CPU designer may be inclined to use MRAM to offer a much larger but somewhat slower cache, rather than a smaller but faster one. It remains to be seen how this trade-off will play out in the future.
Overall MRAM has similar performance to SRAM, similar density of DRAM but much lower power consumption than DRAM, and is much faster and suffers no degradation over time in comparison to flash memory.
It is this combination of features that some suggest make it the "universal memory", able to replace SRAM, DRAM, EEPROM, and flash. This also explains the huge amount of research being carried out into developing it.
However, to date, MRAM has not been as widely adopted in the market as other non-volatile RAMs.
It may be that vendors are not prepared to take the risk of allocating a modern fab to MRAM production when such fabs cost upwards of a few billion dollars to build and can instead generate revenue by serving developed markets producing flash and DRAM memories.
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Passing en electrical current through a conductor will result in a spin accumulation at the edges of the conductor transverse to the current flow, due to spindependent scattering off impurities (Mott scattering).
Fig: The Spin up and spin down electrons are deflected in two opposite directions, when they collide with the impurity atoms.
When the current direction is reversed, the directions of spin orientation is also reversed. In Spin Hall Effect, unlike the conventional hall effect, no magnetic field is needed. On the contrary, if a strong enough magnetic field is applied in the direction perpendicular to the orientation of the spins at the surfaces, Spin Hall Effect will disappear because of the spin precession around the direction of the magnetic field.
The bar exhibiting Spin Hall effect is called as the Spin Hall Bar.
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spin filters
A Spin Filter is a device that accepts or allows the electrons with the same spin, as the device material itself is aligned, to pass through it and blocks the electrons of opposite spin. Hence the name Spin Filter.
It is just like a tunnel junction, having three layers, arranged in the manner shown in Fig.1 below and is called an N-F-N Tunnel Junction. These layers are as follows: The first layer, starting from left, is made up of a bulk normal metal and is denoted by N. The second layer, middle one, is made up of ferromagnetic material Europium chalcogenide and is denoted by F. And the third layer, the right most, is again made up of a bulk normal metal and is denoted by N.
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spin diodes
Spin diodes are inhomogeneous two-terminal devices whose electronic or optical properties depend on the spin polarization of the carriers. a silicon p-n junction is shown whose current was modified by changing the spin polarization of the recombination centers. In a magnetic field both the mobile carriers and the recombination centers have an equilibrium spin polarization due to the Zeeman splitting. The current in a p-n junction depends on the recombination rate, which, in turn, depends on the relative orientation of the spin of the carriers and the centers Several spin diodes have recently been proposed or demonstrated with the goal of either maximizing the sensitivity of the I-V characteristics to spin and magnetic field, or facilitating spin injection and its detection through semiconductor interfaces comprising a magnetic semiconductor as the injector.
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The p region is magnetic, by which we mean that it has a spin-split conduction band with the spin splitting (Zeeman or exchange)
Using an MBD with a ferromagnetic semiconductor slightly above its TC is also expected to give large g* factors. The n region is nonmagnetic, but electrons can be spin polarized by a spin source (circularly polarized light or magnetic electrode).
Scheme of a magnetic bipolar diode. The p region (left) is magnetic, indicated by the spin splitting of the conduction band.
The n region (right) is nonmagnetic, but spin polarized by a spin source: Filled circles, spin-polarized electrons; empty circles, unpolarized holes.
If the nonequilibrium spin in the n region is oriented parallel (top figure) to the equilibrium spin in the p region, large forward current flows.
V-I Characteristics of Spin diode: To illustrate the I-V characteristics of MBDs, consider the low-injection limit in the configuration of Fig. The electron contribution to the total electric current is:
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spin transistors
There are two proposed schemes for spin transistors, one in analogy with the bipolar transistor and other in analogy witn the field effect transistor. Construction: Just as in a conventional bipolar transistor, we have an emitter, a base and a collector, in the bipolar spin-transistor we have a semiconductor emitter, a magnetic semiconductor base and a semiconductor collector. The emitter and collector are non-magnetic n-type semiconductors. The base is a p-type magnetic semiconductor, in which the conduction band is split due to exchange interaction. The junction between emitter and base is forward biased while the junction between base and collector is reverse biased.
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Spin FET
The generic spintronic scheme on a prototypical device, the Datta-Das spin field-effect transistor The scheme shows the structure of the usual FET, with a drain, a source, a narrow channel, and a gate for controlling the current. The gate either allows the current to flow (ON) or does not (OFF). Construction: In the Datta-Das SFET the source and the drain are ferromagnets acting as the injector and detector of the electron spin.
Source Drain
The gate either allows the current to flow (ON) or does not (OFF).
WORKING: In the Datta-Das SFET the source and the drain are ferromagnets acting as the injector and detector of the electron spin.
The drain injects electrons with spins parallel to the transport direction. The electrons are transported ballistically through the channel When they arrive at the drain, their spin is detected. In a simplified picture, the electron can enter the drain (ON) if its spin points in the same direction as the spin of the drain. Otherwise it is scattered away (OFF).
The role of the gate is to generate an effective magnetic field. This effective magnetic field causes the electron spins to precess. By modifying the voltage, one can cause the precession to lead to either parallel or antiparallel (or anything between) electron spin at the drain, effectively controlling the current.
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Spin Q-bits
Semiconductor quantum dots are small devices in which charge carriers are confined in all three dimensions: this can be achieved by electrical gating and/or etching techniques applied e. g. to a two-dimensional electron gas. In the quantum-dot scenario either the electron spin or the charge (orbital) degrees of freedom can be chosen as the qubit. Here we will describe the spin dotwhich has two immediate advantages: the qubit represented by a real spin-1/2 is always well-defined as the two-dimensional Hilbert space is the entire space available and therefore there are no extra dimensions into which the qubit state could "leak"; real spins have quite long dephasing times (order of microseconds in GaAs).
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