Name: _________________________ MULTIPLE CH ICE!

: C#a(ter 1

ECE 028 Electronics 1 Final Examinations Date: __________

"rite t#e letter o$ t#e correct ans%er to t#e statement on t#e test &oo'let (ro)i*e*+

!emicon*,ctor Dio*es
a. Transistor a. Substantial Increase a. "rotons a. (ero a. *or+ard ,ias a. can be used as a s+itch a. Short a. 3 a. 3 a. ..2) 9 1513 a. ;allium a. 5 a. <onduction a. 2) > a. 23 mA a. "iece+ise a. Aultimeter a. A Short Diode a. DDA a. -ed a. ?umens a. "arallel a. BCponential a. "rotons a. "rotons b. Diode b. Substantial Decrease b. #oles b. Infinit b. -everse ,ias b. can be used as an amplifier b. 2pen b. $ b. $ b. 1.. 9 15:14 b. Indium b. 1 b. *or+ard ,ias b. $5 > b. 2).2 mA b. ?inear b. <urve Tracer b. An 2pen Diode b. 62A b. ,lue b. <andela b. Series b. Sinusoidal b. #oles b. #oles c. All of the Above c. All of the Above d. None of the Above d. None of the Above

1. A ___ is the simplest of semiconductor devices. 2. An increase in temperature of a semiconductor can result in a _____ in the number of free electrons in the material. 3. In n-t pe material the _____ is called the ma!orit carrier. $. %hat is the resistor value of an ideal diode in the re&ion of conduction' ). %hat is the state of an ideal diode in the re&ion of nonconduction' .. The diode _____. /. The ideal diode is a0n1 _____ circuit in the re&ion of nonconduction. 3. #o+ man orbitin& electrons does the &ermanium atom have' 4. #o+ man valence electrons does a silicon atom have' 15. 2ne e6 is e7ual to _____ 8. 11. %hich of the follo+in& elements is most fre7uentl used for dopin& pure ;e or Si' 12. The diffused impurities +ith _____ valence electrons are called donor atoms. 13. In +hat state is a silicon diode if the volta&e drop across it is about 5./ 6' 1$. <alculate static resistance -D of a diode havin& ID = 35 mA and 6D = 5./) 6. 1). <alculate ID if -D = 35 and 6D = 5.3$ 6. 1.. The _____ diode model is emplo ed most fre7uentl in the anal sis of electronic s stems. 1/. %hich of the follo+in& devices can chec@ the condition of a semiconductor diode' 13. %hat does a hi&h resistance readin& in both for+ard- and reverse-bias directions indicate' 14. The condition of a semiconductor diode can be determined 7uic@l usin& a _____. 25. In +hich of the follo+in& color0s1 is 0are1 ?BDs presentl available' 21. In +hich of the follo+in& is the li&ht intensit measured' 22. Diodes are connected _____ to increase the current-carr in& capacit . 23. The for+ard characteristics curve of a diode &ro+s in _____ form. 2$. In n-t pe material the _____ is called the minorit carrier. 2). In p-t pe material the _____ is called the ma!orit carrier.

c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above

d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above

C#a(ter 2

Dio*e -((lications
a. 5./ 6 a. <haracteristic <urve a. <haracteristic <urve a. Device a. Device b. 5.3 6 b. "oint of 2peration b. "oint of 2peration b. Net+or@ b. Net+or@ c. All of the Above c. All of the Above d. None of the Above d. None of the Above

2.. The volta&e drop across a conductin& Si diode is 2/. The intersection of the load line +ith the characteristic curve determines the _____ of the s stem. 23. The slope of the load line depends on the _____. 24. The load line is defined b the _____ 35. and a characteristic curve is defined b the _____.

c. All of the Above c. All of the Above c. All of the Above

d. None of the Above d. None of the Above d. None of the Above

Items .1/00 are t%o (oints eac#+ !ol,tion not necessar1+ 2e$er to t#e Circ,it Dia3rams &elo%+ -ss,me a !ilicon *io*e ,nless state* ot#er%ise+ 31. Determine the current in the circuit. 32. Determine the volta&e across the resistor. 33. Determine the value of the load resistor. 3$. Determine ID. 3). Determine 62. 3.. Determine ID2. 3/. Determine ID1. 33. Determine ID2. 34. Determine the current throu&h each diode if B1 = B2 = 5 6. $5. Determine 62 if B1 = B2 = 15 6. a. $./. mA a. 5.4 6 a. ) @> a. 2.53. mA a. 3.251 6 a. 1$./5 mA a. 1$./5 mA a. 3.343 mA a. $..) mA a. 15 6 b. 5 mA b. -5.) 6 b. ).) > b. 1.343 mA b. 1.3/1 6 b. 24.$5 mA b. 24.$5 mA b. 3.)/1 mA b. 13.. mA b. 4.3 6 c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above

.1+

.4+

.5+

.2+

.6+

00+

..+

.7+

.0+

.8+

C#a(ter .

8i(olar 9,nction Transistor

A. ,ias A. N"N A. 1E1)5 A. 25.255 mA A. Active A. *or+ardG -everse A. *or+ardG *or+ard A. *or+ardG *or+ard ,. ,ase ,. "N" ,. 1)5E1 ,. 25.555 mA ,. Saturation ,. -everseG *or+ard ,. -everse -everse ,. -everse -everse ,. 5./ 6 ,. I< J IB ,. -esistance ,. 5.4. ,. <ommomBmitter c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above c. All of the Above d. None of the Above c. All of the Above d. None of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above

$1. The ,8T has three terminals namel emmiterD collector and _____. $2. The ,8T eCists in la ers arran&ed ONLY as such. $3. %hat is the ratio of the total +idth to that of the center la er for a transistor' $$. *or a biased npn ,8TD let I, = 15 FA and IB = 25.1 mA. %hat is the level of I<' $). *or a ,8T to ampif si&nalD it must be used in the __________ re&ion. $.. In the active re&ion of operationD the collectorbase is _____ biased +hile the base-emitter is _____ biased. $/. In the saturation re&ion of operationD the collector-base is _____ biased +hile the base-emitter is _____ biased. $3. In the cutoff re&ionD the collector-base is _____ +hile the base-emitter is _____. $4. #o+ much is the base-to-emitter volta&e of a transistor in the HonH state' )5. %hat is Idc e7ual to' )1. In the active re&ionD the transistor can amplif __________. )2. Determine the value of K +hen I = 355 )3. A ,8T can be biased usin& __________ confi&uration. )$. A ,8T can be biased usin& __________ confi&uration. )). It is common practice to ma@e -, ver _______. ).. The current throu&h the base terminal I, is relativel ver __________. )/. I< is approCimatel the same value as _____. )3. IB is approCimatel the same value as _____. )4. A ,8T is constructed +ith three __________ of material. .5. A ,8T is an electronic device +ith three __________. .1. All amplifiers should have at least _____ terminals .2. .3. +ith _____ terminal0s1 controllin& the flo+ bet+een _____ other terminal0s1.

A. 5./ m6 A. I, J IB A. 6olta&e A. 5.43 A. Bmitter-,iased A. <urrent Divider A. Small A. Small A. I, A. I< A. ?a ers A. ?a ers a. 3 a. 3 a. 3 a. much lar&er a. sum

,. 6olta&e Divider c. All of the Above ,. ?ar&e ,. ?ar&e ,. IB ,. I, ,. -e&ions of 2peration ,. -e&ions of 2peration b. 1 b. 1 b. 1 b. much smaller b. difference c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above

.$. The outer la ers of a transistor are _____ than the sand+iched la er. .). The base current is the _____ of the emitter and collector currents.

C#a(ter 0

89T : DC 8iasin3
Items 66/70 are t%o (oints eac#+ !ol,tion not necessar1+

For a 89T Fixe* 8ias con$i3,ration 3i)en t#at I ; .00< 6<< ; =14 >< -< ; 1 '?< -, ; 1 M?+ ... I, is e7ual to a. 1$.3 FA b. 1$.3 mA ./. I< is e7ual to .3. IB is e7ual to .4. 6<B is e7ual to /5. 6B is e7ual to a. $.24 mA a. $.3 mA a. 15./ 6 a. 15./ 6 b. $D245 FA b. $.3 FA b. $.24 6 b. $.24 6

c. All of the Above c. All of the Above c. All of the Above c. All of the Above c. All of the Above

d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above

Items 71/74 are t#ree (oints eac#+ !ol,tion not necessar1+ For a 89T Fixe* 8ias con$i3,ration 3i)en t#at >CC ; =12 >< 2C ; 0 '?< 281 ; 10 '?< 282 ; 2 '? an* 2E ; 1 '?+ /1. 6,, is e7ual to a. 15 6 b. 2 6 c. All of the Above /2. 6B is e7ual to /3. IB is e7ual to /$. 6<B is e7ual to /). 6< is e7ual to a. 1.3 6 a. 1.3 FA a. ).) 6 a. ).) 6 b. 2./ 6 b. 1.3 mA b. ).2 6 b. ).2 6 c. All of the Above c. All of the Above c. All of the Above c. All of the Above

d. None of the Above d. None of the Above d. None of the Above d. None of the Above d. None of the Above