2SK4108

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI)

2SK4108
Switching Regulator Applications
Low drainsource ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0. 21 (typ.) : |Yfs| = 14 S (typ.) Unit: mm

: IDSS = 100 A (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristic Drainsource voltage Draingate voltage (RGS = 20 k) Gatesource voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 20 80 150 960 20 15 150 55~150 Unit V V V A A W mJ A mJ C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE

Pulse (Note 1)

Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

2-16C1B

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,

Weight: 4.6 g (typ.)

etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (chc) Rth (cha) Max 0.833 50 Unit C / W C / W

Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.08 mH, RG = 25 , IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.

2007-06-29

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Electrical Characteristics (Ta = 25C)

Characteristic Gate leakage current Gatesource breakdown voltage Drain cutoff current Drainsource breakdown voltage Gate threshold voltage Drainsource ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 50 tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 20 A VGS 10 V 0V ID = 10A RL = 20 VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Min 30 500 2.0 4.0 Typ. 0.21 14 3400 25 320 70 Max 10 100 4.0 0.27 pF Unit A V A V V S

Turn on time Switching time Fall time

130

ns

VDD 200 V Duty < = 1%, tw = 10 s

70

Turn off time Total gate charge (gatesource plus gatedrain) Gatesource charge Gatedrain (Miller) charge

280 70 45 25

nC

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V dIDR / dt = 100 A / s Min Typ. 1300 20 Max 20 80 1.7 Unit A A V ns C

Marking

TOSHIBA

K4108

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

2007-06-29

2SK4108
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ID VDS ID VDS
10 Common source 10 Tc = 25C Pulse Test 20 6 10 5.5 8 16 8 5.25 6 5 4 6
Common source Tc = 25C Pulse Test

(A)

(A)

5.75 12 5.5 8

ID

Drain current

Drain current

ID

5.25 5

4.5 VGS = 4V

4 4.5 VGS = 4 V 5 0 0 10 20 30 40 50

0 0 1 2 3 4

Drain-source voltage

VDS

(V)

Drain-source voltage

VDS

(V)

ID VGS
50 20 Common source VDS = 20 V Pulse Test

VDS VGS
Common source Tc = 25C Pulse Test

40

(V) VDS Drain-source voltage

25

16

ID (A)

30

12

Drain current

20

8 ID = 20 A 4 10 5

100 0

Tc = 55C

10

12

16

20

Gate-source voltage

VGS

(V)

Gate-source voltage

VGS

(V)

|Yfs| ID
100 1.0 Common source VDS = 20 V Pulse Test

RDS (ON) ID

Tc = 55C 10 25

100

Drain-source ON resistance RDS (ON) ()

Forward transfer admittance Yfs (S)

Common source Tc = 25C VGS = 10 V Pulse Test 0.1 1 10 100

10

100

Drain current ID (A)

Drain current ID (A)

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RDS (ON) Tc
1.0

IDR VDS
100 Common source Tc = 25C Pulse Test

Drain-source ON resistance RDS (ON) ()

0.8

Drain reverse current IDR (A)

Common source VGS = 10 V Pulse Test

10

0.6 ID = 20A 0.4

10

10 1 5 3

0.2

0 80

40

40

80

120

160

0.1

1 0 0.2 0.4 0.6

VGS = 0 V 0.8 1.0 1.2 1.4

Case temperature Tc (C)

Drain-source voltage

VDS

(V)

Capacitance VDS
10000 Ciss 5

Vth Tc
Common source VDS = 10 V ID = 1mA Pulse Test

Gate threshold voltage Vth (V)

(pF)

1000 Coss

Capacitance C

100
Common source VGS = 0 V f = 1 MHz Tc = 25C

Crss

10 0.1

10

100

0 80

40

40

80

120

160

Drain-source voltage

VDS

(V)

Case temperature Tc (C)

PD Tc
200 500 VDS 400

Dynamic input / output characteristics

20

PD (W)

150

16 200V

Drain power dissipation

VDS

Drain-source voltage

100

VDD = 100V 400V 200 VGS 100 Common source ID = 20 A Ta = 25C Pulse Test 4 8

50

40

80

120

160

200

0 0

20

40

60

80

100

0 120

Case temperature Tc (C)

Total gate charge Qg (nC)

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Gate-source voltage

300

12

VGS (V)

(V)

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SAFE OPERATING AREA

1000 1000

EAS Tch

EAS (mJ) Avalanche energy

100

ID max (pulse) * 100 s * ID max (continuous) 1 ms *

800

Drain current ID (A)

600

10

DC OPEATION Tc = 25C

400

200

0.1

Single pulse Ta=25 Curves must be derated linearly with increase in temperature. VDSS max

0 25

50

75

100

125

150

Channel temperature (initial)

1000

Tch (C)

0.01 1 10 100

Drain-source voltage

VDS (V)

15 V 15 V

BVDSS IAR VDD Test circuit Wave form VDS

RG = 25 VDD = 90 V, L = 4.08 mH

AS =

1 B VDSS L I2 B 2 V VDSS DD

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RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

20070701-EN

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

2007-06-29