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BSS84

July 2002

BSS84
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features
0.13A, 50V. RDS(ON) = 10 @ VGS = 5 V Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) High saturation current

S
G S

SOT-23

G
TA=25oC unless otherwise noted

Absolute Maximum Ratings


Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation Derate Above 25C

Parameter

Ratings
50 20
(Note 1)

Units
V V A W mW/C C

0.13 0.52 0.36 2.9 55 to +150 300

(Note 1)

Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16 from Case for 10 Seconds

Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1)

350

C/W

Package Marking and Ordering Information


Device Marking SP Device BSS84 Reel Size 7 Tape width 8mm Quantity 3000 units

2002 Fairchild Semiconductor Corporation

BSS84 Rev B(W)

BSS84

Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage.
(Note 2)

Test Conditions
ID = 250 A VGS = 0 V, ID = 250 A,Referenced to 25C VDS = 50 V, VGS = 20 V, VGS = 0 V VDS = 0 V

Min Typ
50 48

Max

Units
V mV/C

Off Characteristics

15 60 10

A A nA

VDS = 50 V,VGS = 0 V TJ = 125C

On Characteristics
VGS(th) VGS(th) TJ RDS(on) ID(on) gFS

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance

VDS = VGS,

ID = 1 mA

0.8

ID = 1 mA,Referenced to 25C VGS = 5 V, ID = 0.10 A VGS = 5 V,ID = 0.10 A,TJ=125C VGS = 5 V, VDS = 10 V VDS = 25V, ID = 0.10 A

1.7 3 1.2 1.9

V mV/C

10 17

0.6 0.05 0.6

Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)

VDS = 25 V, f = 1.0 MHz

V GS = 0 V,

73 10 5 9

pF pF pF

VGS = 15 mV, f = 1.0 MHz

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

VDD = 30 V, VGS = 10 V,

ID = 0.27A, RGEN = 6

2.5 6.3 10 4.8

5 13 20 9.6 1.3

ns ns ns ns nC nC nC

VDS = 25 V, VGS = 5 V

ID = 0.10 A,

0.9 0.2 0.3

DrainSource Diode Characteristics and Maximum Ratings


IS VSD trr Qrr Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 0.26 A(Note 2) 0.8 10
(Note 2)

0.13 1.2

A V nS nC

IF = 0.10A diF/dt = 100 A/s

Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 350C/W when mounted on a minimum pad..

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

BSS84 Rev B(W)

BSS84

Typical Characteristics

RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

VGS = -5V
-ID, DRAIN CURRENT (A) 0.8

-4.5V

2 -3.5V 1.8 VGS=-3.0V 1.6 1.4 -3.5V 1.2 1 0.8 -4.0V -4.5V -5.0V

0.6

-3.0V

0.4

0.2

-2.5V

0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

-ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.


5

1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o

RDS(ON), ON-RESISTANCE (OHM)

ID = -0.10A VGS = -5V

ID = -0.05A
4

TA = 125oC

TA = 25oC
1 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V)

125

150

TJ, JUNCTION TEMPERATURE ( C)

Figure 3. On-Resistance Variation with Temperature.


1

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.


1

TA = -55oC 125oC

25oC

-ID, DRAIN CURRENT (A)

0.8

-IS, REVERSE DRAIN CURRENT (A)

VDS = -5V

VGS = 0V 0.1 TA = 125oC 25oC -55oC 0.001

0.6

0.01

0.4

0.2

0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V)

0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

BSS84 Rev B(W)

BSS84

Typical Characteristics

5 -VGS, GATE-SOURCE VOLTAGE (V)

100
ID = -0.10A VDS = -8V -25V -30V

f = 1 MHz VGS = 0 V 80 CAPACITANCE (pF) CISS

60

40

20 COSS CRSS 0
0 0.2 0.4 0.6 0.8 1

0 Qg, GATE CHARGE (nC)

10

20

30

40

50

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.


1 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10ms 0.1 1s DC 0.01 VGS = -5V SINGLE PULSE RJA = 350oC/W TA = 25oC 0.001 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 100ms 10s 1ms
P(pk), PEAK TRANSIENT POWER (W) 5

Figure 8. Capacitance Characteristics.

100us

SINGLE PULSE RJA = 350C/W TA = 25C

0 0.01

0.1

1 t1, TIME (sec)

10

100

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5

RJA(t) = r(t) * RJA


0.2

RJA = 350oC/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2

0.1

0.1 0.05 0.02

0.01

0.01

SINGLE PULSE

0.001 0.0001

0.001

0.01

0.1
t1, TIME (sec)

10

100

1000

Figure 11. Transient Thermal Response Curve.


Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design.

BSS84 Rev B(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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DISCLAIMER

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

Rev. I

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