FQP6N60

April 2000

QFET
FQP6N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

TM

Features
6.2A, 600V, RDS(on) = 1.5 @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability

D
!
"

G! DS

! "
" "

TO-220
FQP Series
!

Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC = 25C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

FQP6N60 600 6.2 3.9 24.8
30

(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)

440 6.2 13 4.5 130 1.04 -55 to +150 300

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8
from case for 5 seconds

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 0.96 -62.5 Units CW CW CW

2000 Fairchild Semiconductor International

Rev. A, April 2000

FQP6N60

Electrical Characteristics




T
Symbol Parameter

= 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.53 ------10 100 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 3.1 A VDS = 50 V, ID = 3.1 A
(Note 4)

3.0 ---

-1.2 6.0

5.0 1.5 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---770 95 10 1000 120 13 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 6.2 A, VGS = 10 V
(Note 4, 5)

VDD = 300 V, ID = 6.2 A, RG = 25

(Note 4, 5)

--------

20 70 40 45 20 4.9 9.4

50 150 90 100 25 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 6.2 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 6.2 A, dIF / dt = 100 A/s
(Note 4)

------

---290 2.35

6.2 24.8 1.4 ---

A A V ns C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21mH, IAS = 6.2A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD
6.2A, di/dt
200A/s, VDD
BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width
300s, Duty cycle
2% 5. Essentially independent of operating temperature

2000 Fairchild Semiconductor International

Rev. A, April 2000

FQP6N60

Typical Characteristics

10

ID , Drain Current [A]

ID , Drain Current [A]

VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :

10

150

10

10

25
-55


Notes : 1. VDS = 50V 2. 250 s Pulse Test

10

-1

Notes : 1. 250 s Pulse Test 2. TC = 25

10

-1

10

10

10

-1

10

VDS , Drain-Source Voltage [V]

VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

RDS(ON) [
], Drain-Source On-Resistance

VGS = 10V VGS = 20V

IDR , Reverse Drain Current [A]

10

10

150

25


Notes : 1. VGS = 0V 2. 250 s Pulse Test

1

Note : TJ = 25

0 0 2 4 6 8 10 12 14 16

10

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

ID, Drain Current [A]

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

1400

1200

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

12

10

VDS = 120V VDS = 300V VDS = 480V

1000

VGS , Gate-Source Voltage [V]

Ciss

Capacitance [pF]

800

Coss

600

Notes : 1. VGS = 0 V 2. f = 1 MHz

400

Crss

2

Note : ID = 6.2 A

200
0

0 -1 10

10

10

12

15

18

21

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2000 Fairchild Semiconductor International

Rev. A, April 2000

FQP6N60

Typical Characteristics

(Continued)

1.2

3.0

2.5

BV DSS , (Norm alized) Drain-Source Breakdown Voltage

RDS(ON) , (Normalized) Drain-Source On-Resistance

1.1

2.0

1.0

1.5

1.0

Notes : 1. VGS = 10 V 2. ID = 3.1 A

0.9

Notes : 1. VGS = 0 V 2. ID = 250  A

0.5

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature

10

7
Operation in This Area is Limited by R DS(on)

ID, Drain Current [A]

1 ms 10 ms DC
10
0

ID, Drain Current [A]

3

10

100 s

Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

o o

10

-1

10

10

10

10

0 25

50

75

100

125

150

VDS, Drain-Source Voltage [V]

TC, Case Temperature [
]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs. Case Temperature

( t) , T h e r m a l R e s p o n s e

10

D = 0 .5

N o te s : 1 . Z
J C ( t ) = 0 . 9 6  /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z
J C( t )

0 .2
10
-1

0 .1 0 .0 5 0 .0 2 0 .0 1

PDM
s in g le p u ls e

JC

t1 t2

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

2000 Fairchild Semiconductor International

Rev. A, April 2000

FQP6N60

Gate Charge Test Circuit & Waveform

50K
12V 200nF 300nF

Same Type as DUT VDS

VGS Qg 10V Qgs Qgd

VGS

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS VGS RG

RL VDD

VDS

90%

10V

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG VDD DUT

tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS ID (t) VDD
tp

10V

VDS (t) Time

2000 Fairchild Semiconductor International

Rev. A, April 2000

FQP6N60

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2000 Fairchild Semiconductor International

Rev. A, April 2000

FQP6N60

Package Dimensions

TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )
0.50 0.05
+0.10

2.40 0.20

10.00 0.20

2000 Fairchild Semiconductor International

Rev. A, April 2000

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT E2CMOS FACT FACT Quiet Series FAST FASTr GTO

HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT-3 SuperSOT-6

SuperSOT-8 SyncFET TinyLogic UHC VCX

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2000 Fairchild Semiconductor International

Rev. A, January 2000

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