2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors

These devices are designed for use in generalpurpose amplifier and switching applications.
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High DC Current Gain High Current Gain Bandwidth Product TO220 Compact Package These Devices are PbFree and are RoHS Compliant*

7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 50 70 VOLTS, 40 WATTS

PNP NPN COLLECTOR 2, 4

MAXIMUM RATINGS (Note 1)

Rating CollectorEmitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 CollectorBase Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 EmitterBase Voltage Collector Current Continuous Collector Current Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO 30 50 70 VCB 40 60 80 VEB IC ICM IB PD 40 0.32 TJ, Tstg 65 to +150 W W/C C 5.0 7.0 10 3.0 Vdc Adc Adc Adc Vdc Value Unit Vdc 1 BASE

COLLECTOR 2, 4

1 BASE EMITTER 3 4

EMITTER 3

TO220 CASE 221A STYLE 1 1 2

MARKING DIAGRAM

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data.

THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, JunctiontoCase Symbol RqJC Max 3.125 Unit _C/W

2N6xxxG AYWW

2N6xxx xxx G A Y WW

= Specific Device Code = See Table on Page 4 = PbFree Package = Assembly Location = Year = Work Week

ORDERING INFORMATION
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2013

See detailed ordering, marking, and shipping information in the package dimensions section on page 4 of this data sheet.

September, 2013 Rev. 10

Publication Order Number: 2N6107/D

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) 2N6111, 2N6288 (VCE = 40 Vdc, IB = 0) 2N6109 (VCE = 60 Vdc, IB = 0) 2N6107, 2N6292 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N6111, 2N6288 (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6109 (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N6107, 2N6292 (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6111, 2N6288 (VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6109 (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6107, 2N6292 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc) 2N6107, 2N6292 (IC = 2.5 Adc, VCE = 4.0 Vdc) 2N6109 (IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6111, 2N6288 (IC = 7.0 Adc, VCE = 4.0 Vdc) All Devices CollectorEmitter Saturation Voltage (IC = 7.0 Adc, IB = 3.0 Adc) BaseEmitter On Voltage (IC = 7.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 4) (IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 2N6288, 2N6292 2N6107, 2N6109, 2N6111 Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT = |hfe| ftest fT 4.0 10 Cob hfe 20 250 pF MHz hFE 30 30 30 2.3 VCE(sat) VBE(on) 3.0 3.5 Vdc 150 150 150 Vdc VCEO(sus) 30 50 70 ICEO ICEX IEBO 1.0 100 100 100 2.0 2.0 2.0 mAdc mAdc mAdc 1.0 1.0 1.0 mAdc Vdc Symbol Min Max Unit

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2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)

40 PD, POWER DISSIPATION (WATTS)

30

20

10

20

40 60 80 100 120 TC, CASE TEMPERATURE (C)

140

160

Figure 1. Power Derating

VCC +30 V 25 ms +11 V 0 51 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% -4 V D1 RB RC SCOPE t, TIME (s)

2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.07 0.1 TJ = 25C VCC = 30 V IC/IB = 10

tr

td @ VBE(off) 5.0 V

RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA

1.0 0.2 0.3 0.5 2.0 IC, COLLECTOR CURRENT (AMP)

3.0

5.0 7.0

Figure 2. Switching Time Test Circuit

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

Figure 3. TurnOn Time

1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01

D = 0.5

0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 ZqJC(t) = r(t) RqJC RqJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk)

t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k

Figure 4. Thermal Response

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2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)

15 10 0.5 ms dc 0.1 ms CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) 2.0 3.0 20 30 50 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.1 ms

7.0 5.0 3.0 2.0 1.0 0.7 0.5

5.0 ms

0.3 0.2 0.15 1.0

70 100

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

IC, COLLECTOR CURRENT (AMPS)

Figure 5. ActiveRegion Safe Operating Area

5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.07 0.1 ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2

300 200 C, CAPACITANCE (pF) Cib 100 70 50 Cob TJ = 25C

t, TIME (s)

tr

0.2

0.3 0.5 2.0 3.0 1.0 IC, COLLECTOR CURRENT (AMP)

5.0 7.0

30 0.5

1.0

10 20 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS)

30

50

Figure 6. TurnOff Time

Figure 7. Capacitance

ORDERING INFORMATION
Device 2N6107G 2N6109G 2N6111G 2N6288G 2N6292G Device Marking 2N6107 2N6109 2N6111 2N6288 2N6292 Package TO220 (PbFree) TO220 (PbFree) TO220 (PbFree) TO220 (PbFree) TO220 (PbFree) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail

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2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)

PACKAGE DIMENSIONS

TO220 CASE 221A09 ISSUE AG

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04

T B
4

SEATING PLANE

F T S

Q
1 2 3

A U K

H Z L V G D N R J

BASE COLLECTOR EMITTER COLLECTOR

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PUBLICATION ORDERING INFORMATION

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2N6107/D