ECE-Elec 3 Lec1 Basic Physics of Semiconductors With Exercise

ECE-Elec 3 Lecture 1
Erika Escandor, ECE
ECE ELEC3-UST ECE 2013
Outline
Introduction
Introduction
ELECTRONICS vs MICROELECTRONICS
ELECTRONIC Began about a century ago Vacuum Tubes Transistors (1940s) MICROELECTRONICS Not until 1960s Integrated Circuits (ICs) Microchips
Introduction
Imagine:
A microprocessor containing about 100 million transistors in a chip area of approximately 3 cm x 3 cm.
Suppose ICs were not invented:

Build the processor using 100 million discrete transistors.
Introduction
Using 100 transistors: million discrete
If each device occupies a volume of 3 mm x 3 mm x 3 mm Minimum volume would be 27 mm3 x 108 Plus wires to connect the transistors thus volume would increase substantially this will be extremely SLOW since signals would need to travel on long wires
ECE ELEC3-UST ECE 2013 5
Introduction
Using 100 transistors: million discrete
If each discrete transistor costs Php2.00, the processor would be worth Php200 million If each discrete transistor would weigh 1 g each, the processor would weight up to 100 tons
Integrated Circuit (IC)

IC consists of interconnected electronic components in a single piece (chip) of semiconductor material In 1958, Jack S. Kilby (Texas Instruments) showed that it was possible to fabricate a simple IC in Germanium

In 1959, Robert Noyce (Fairchild Semiconductor) demonstrated an IC made in Silicon using SiO2 as the insulator and Al for the metallic interconnects

An IC that performs very complex tasks
Can be built by connecting a large number of components, each performing simple operations

The degree of integration has increased at an exponential pace over the past ~40 years
10
Moores Law
Number of transistors on ICs doubles approximately every two years Named after Intel cofounder Gordon E. Moore
Outline
Basic Semiconductor P !sics

Semiconductors Intrinsic Silicon "o#ing Carrier Concentrations $rans#ort o% Carriers
Carrier "ri%t and "i%%usion
12
Semiconductor
Material which has electrical conductivity between that of a metal and an insulator Remember:
Low resistivity = conductor High resistivity = insulator Intermediate resistivity = semiconductor
ELE 311-UST ECE 2013
13
Semiconductor
Generally crystalline in structure for IC devices
In recent years, however, non-crystalline semiconductors have become commercially very important
polycrystalline amorphous crystalline
14
Structure o% Solid
Crystalline
Solid material whose constituent atoms, molecules, or ions are arranged in an ordered pattern extending in all three spatial dimensions
Amorphous
Non-crystalline solid is a solid that lacks the long-range order characteristic of a crystal
ELE 311-UST ECE 2013 15
Structure o% Solid
Polycrystalline
Solids that are composed of many crystallites of varying size and orientation
16
Semiconductor
Has the ability to change conductivity by addition of impurities called Doping
17
&alence eRemember:
Valence shell - most important part in electronics, since this is where we can get free electrons electrons that get dislodged from their orbit, capable of carrying a charge through a conductor. NOTE: The farther the electron is from the nucleus, the easier it is to set it free.
18
&alence eRemember:
Electrons move around the nucleus in a series of shells Each shell having a definite number of electrons Outermost shell - contains no more than 8 electrons (valence number)
ELE 311-UST ECE 2013 19
&alence eNeon
Complete outermost shell No tendency for chemical reaction Sodium One (1) valence electron Donor of electrons Chloride Seven (7) valence electrons Acceptor of electrons
ELE 311-UST ECE 2013 20
Semiconductor
Atoms having approximately four (4) valence electrons fall somewhere between inert gases and highly volatile elements Group IV in periodic table Ex. Silicon, Germanium
21
Periodic $a'le o% Elements
22
Silicon
Atomic density: 5 x 1022 atoms/cm3 Si has four valence electrons
Thus requiring another four to complete its outermost shell It can form covalent bonds with four of its nearest neighbors.
23
Electron Pro#erties o% Silicon

Silicon is a semiconductor material
Pure Si has a relatively high electrical resistivity at room temperature
There are 2 types of mobile chargecarriers in Si:

Conduction electrons - negatively charged Holes - positively charged
24
Electron Emission
Electrons on the outermost shell were given enough additional energy to escape Methods of Electron Emission
Thermionic Photoelectric Field Emission / Antoelectronic Secondary Emission
Cold
Cathode
25
Electron Emission %or Silicon

The concentration (#/cm3) of conduction electrons & holes in a semiconductor can be modulated in several ways:
By adding special impurity (dopants) By applying an electric field By changing the temperature By irradiation
atoms
26
Silicon "uring $ ermal Emission

When temperature goes up:
Electrons gain thermal energy Thus can break away from the covalent bond and act as free charge carrier Free electrons now exist in the conduction band Until they fall into another incomplete bond
27
Electron-(ole Pair )eneration

When a conduction electron is thermally generated, a void or hole is also generated A hole is associated with a positive charge, and is free to move about the Si crystal as well
28
Bandga# Energ!
Denoted by Eg Amount of energy needed to remove an electron from a covalent bond For Silicon, Eg = 1.12 eV
Unit eV (electron volt) - represents the energy necessary to move one electron across a potential difference of 1 V 1 eV = 1.6 x 10-19 J
"ensit! or Concentration o% Electrons

Number of electrons per unit volume Denoted by ni
Where k = 1.38 x 10-23 J/K = Boltzmann constant T = absolute temperature Eg = bandgap energy B = coefficient related to a specific semiconductor material
30

Semiconductor Constants
MATERIAL Silicon (Si) Gallium Arsenide (GaAs) Germanium (Ge) Eg (eV) 1.1 1.4 0.66 B (cm-3 K-3/2) 5.23 x 1015 2.10 x 1014 1.66 x 1015
31
Exponential dependence of ni on Eg Bandgap energy has an effect on the conductivity of a material

Insulators : high Eg Conductors : small Eg Semiconductors : moderate Eg : 1 eV to 1.5 eV
E*am#le +1
Determine the density of electrons in Silicon at T = 300K (room temperature) and T = 600 K. Also, what is the density of holes?
33
Intrinsic and E*trinsic Semiconductors

Intrinsic Semiconductor
Pure Silicon -> has very high resistance Mass-Action Law
Where: n electron density = ni p hole density

Intrinsic and E*trinsic Semiconductors

Extrinsic Semiconductor
Resistivity of Silicon can be modified by replacing some of the atoms in the crystal with atoms of another material
35
"o#ing
Addition of impurities to intrinsic semiconductor (ex. Silicon) Silicon can be doped with other elements to change its electrical properties
36
"o#ing (, $!#e)
For example, if Si is doped with phosphorus (P)
P atom contains five (5) valence electrons Each P atom can contribute a conduction electron, so that the Si crystal has more electrons than holes
37
"o#ing (, $!#e)
If a certain number of Phosphorus atoms are uniformly introduced in a Silicon crystal
The density of free electrons will be equivalent to the number of P atoms
Phosphorus is a donor dopant Silicon crystal becomes an Extrinsic Semiconductor known as n type
"ensit! %or "o#ed Material

Under thermal equilibrium conditions, the product of the conduction-electron density and the hole density is ALWAYS equal to the square of ni
Where: n electron density in extrinsic semiconductor
p hole density in extrinsic semiconductor ni density in intrinsic semiconductor
E*am#le +A crystalline Silicon is doped uniformly with Phosphorus atoms. The doping density is 1016 atoms/cm3. Determine the electron and hole densities at room temperature.
40
Carriers in an ,-t!#e Semiconductor

Electron majority carrier Hole minority carrier
41
"o#ing (P $!#e)
For example, if Si is doped with Boron (B)
B atom contains three (3) valence electrons Each B atom can contribute a hole, so that the Si crystal has more holes than electrons
42
"o#ing (P $!#e)
If a certain number of Boron atoms are uniformly introduced in a Silicon crystal
The density of holes will be equivalent to the number of B atoms
Boron is an acceptor dopant Silicon crystal becomes an Extrinsic Semiconductor known as p type
43
Carriers in an P-t!#e Semiconductor

Hole majority carrier Electron minority carrier
44
Electron and (ole Concentrations

N-type material P-type material
Typical doping densities fall in the range of 1015 to 1018 atoms/cm3
45
"o#ant Com#ensation
An n-type semiconductor can be converted into p-type material by counter-doping it with acceptors such that NA > ND
46
"o#ant Com#ensation
A compensated semiconductor material has both acceptors and donors N-type material (ND > NA) P-type material (NA > ND)
47
Summar! o% C arge Carriers
48
$rans#ort o% Carriers
Movement of charge in semiconductors Drift Diffusion
49
Carrier "ri%t
Drift
Movement of charge carriers due to an electric field
Charge carriers are accelerated by the field and accidentally collide with the atoms in the crystal
&elocit!
Acceleration due to the field and the collision with the crystal counteract leading to a constant velocity for the carriers Average velocity (v) is proportional to the Electric field (E):
51
&elocit!
where: - mobility, cm2/(V s)
Electron Velocity Hole Velocity
52
&elocit!
For Silicon:
n = 1350 cm2 / V s p = 480 cm2 / V s
53
E*am#le +3
A uniform piece of n-type Silicon that is 1 m long senses a voltage of 1 V. Determine the velocity of the electrons. Determine the time it will take for electrons to cross a 1 m long Silicon.
54
Current Calculation
NOTE:
q = 1.6 x 10-19 C [charge of hole and electron (negative for the electron)]
55
Current Calculation
With velocity of v m/s Total charge in v meters passed the cross section in 1 second
Current Calculation
Current - equal to the total charge enclosed in v meters of the bars length
v W h represents volume n q charge density in coulombs negative sign is due to electrons carrying a negative charge
Current "ensit!
Current density - current passing through a unit cross section area - unit: A/cm2 In the presence of electrons and holes:
58
E*am#le +.
Consider an equal electron and hole drift currents, how should the carrier densities be chosen? In this condition, what are the carrier densities for Silicon?
59
Conducti/it! and 0esisti/it!

Conductivity
unit: mho/cm
Resistivity
unit: ohm-cm
60
&elocit! Saturation
With this we assume that velocity rises linearly with electric field If electric field is high enough, there is no linear relationship between v and E anymore
Because the carriers collide with the crystal so frequently and the time between the collisions is so short that they cannot accelerate much
61
&elocit! Saturation
Velocity saturation transistors seen in
Where: 0 low-field mobility b proportionality factor
62
&elocit! Saturation
Thus we can say that:
63
E*am#le +1
A uniform piece of semiconductor 0.2 m long sustains a voltage of 1 V. If the low-field mobility is equal to 1350 cm2 / (V s) and the saturation velocity of the carriers 107 cm/s, determine the effective mobility.
64
E*am#le +1 (cont2)
Also, calculate the maximum allowable voltage such that the effective mobility is only 10% lower than 0. Determine the voltage given this condition.
65
"i%%usion
Flow from a region of high concentration to region of low concentration Even in the absence of electric field, can carry electric current as long as nonuniformity is sustained
"i%%usion
The more non-uniform the concentration, the larger the current
Where: n carrier concentration at a given point along the x axis dn/dx concentration gradient with respect to x
"i%%usion
If each carrier has charge equal to q and given a cross-section area of A
Where: Dn - proportionality factor called the diffusion constant, cm2/s

"i%%usion Constant
For intrinsic Silicon: For electrons: For holes:
69
Current "ensit! %or "i%%usion Carrier
In the presence of electrons and holes:
70
Linear Concentration Pro%ile

Constant diffusion current Suppose the electron concentration is equal to N at x = 0 and falls linearly to zero at x = L
71
E*am#le +3
A p-type bar of Silicon is subjected to electron injection from the left and hole injection from the right. Determine the total current flowing through the device if the cross-section area is equal to 1 m x 1 m.
72
,on-Linear Concentration Pro%ile

Varying diffusion current
73
$otal Current 4lowing in a Semiconductor

Total current flowing in a semiconductor is the sum of drift current and diffusion current:
74
Einstein 0elation
and D are related as:
75
Summar! o% C arge $rans#ort Mec anisms
76
0e%erences
Fundamentals of Microelectronics by Wiley and Razavi Microelectronics : circuit analysis and design by Donald A. Neamen
77
5dditional E*ercise +1
The intrinsic carrier concentration of Germanium is expressed as
where Eg = 0.66 eV
Calculate ni at 300K and 600K and compare the results with those obtained for Silicon.
The intrinsic carrier concentration of Germanium is expressed as
where Eg = 0.66 eV
Determine the electron and hole concentrations if Ge is doped with P at a density of 5 x 1016 cm-3
5dditional E*ercise +An n-type piece of silicon experiences an electric field equal to 0.1 V/m.
Calculate the velocity of electrons and holes in this material. What doping level is necessary to provide a current density of 1 mA/m2 under these conditions? Assume the hole current is negligible.
A n-type piece of silicon with a length of 0.1 m and a cross section area of 0.05 m x 0.05 m sustains a voltage difference of 1 V.
If the doping level is 1017 cm-3, calculate the total current flowing through the device at T = 300 K. Calculate the total current flowing through the device at T = 400K. Assume that mobility does not change with temperature.
81

ECE-Elec 3 Lec1 Basic Physics of Semiconductors With Exercise

Hochgeladen von

Dokumentinformationen

Copyright

Verfügbare Formate

Dieses Dokument teilen

Dokument teilen oder einbetten

Freigabeoptionen

Stufen Sie dieses Dokument als nützlich ein?

Sind diese Inhalte unangemessen?

Copyright:

Verfügbare Formate

ECE-Elec 3 Lec1 Basic Physics of Semiconductors With Exercise

Hochgeladen von

Copyright:

Verfügbare Formate

ECE-Elec 3 Lecture 1

Erika Escandor, ECE

ECE ELEC3-UST ECE 2013

ECE ELEC3-UST ECE 2013

ECE ELEC3-UST ECE 2013

Suppose ICs were not invented:

ECE ELEC3-UST ECE 2013

ECE ELEC3-UST ECE 2013

Integrated Circuit (IC)

Integrated Circuit (IC)

Integrated Circuit (IC)

ECE ELEC3-UST ECE 2013

Integrated Circuit (IC)

ECE ELEC3-UST ECE 2013

Basic Semiconductor P !sics

Carrier "ri%t and "i%%usion

ELE 311-UST ECE 2013

polycrystalline amorphous crystalline

ELE 311-UST ECE 2013

ELE 311-UST ECE 2013

ELE 311-UST ECE 2013

ELE 311-UST ECE 2013

ELE 311-UST ECE 2013

Periodic $a'le o% Elements

ELE 311-UST ECE 2013

ECE ELEC3-UST ECE 2013

Electron Pro#erties o% Silicon

There are 2 types of mobile chargecarriers in Si:

ECE ELEC3-UST ECE 2013

Electron Emission %or Silicon

Silicon "uring $ ermal Emission

ECE ELEC3-UST ECE 2013

Electron-(ole Pair )eneration

ECE ELEC3-UST ECE 2013

"ensit! or Concentration o% Electrons

ECE ELEC3-UST ECE 2013

"ensit! or Concentration o% Electrons

ECE ELEC3-UST ECE 2013

"ensit! or Concentration o% Electrons

Exponential dependence of ni on Eg Bandgap energy has an effect on the conductivity of a material

ECE ELEC3-UST ECE 2013

Intrinsic and E*trinsic Semiconductors

Where: n electron density = ni p hole density

Intrinsic and E*trinsic Semiconductors

ECE ELEC3-UST ECE 2013

ECE ELEC3-UST ECE 2013

ECE ELEC3-UST ECE 2013

"ensit! %or "o#ed Material

ECE ELEC3-UST ECE 2013

Carriers in an ,-t!#e Semiconductor

ECE ELEC3-UST ECE 2013

ECE ELEC3-UST ECE 2013

ECE ELEC3-UST ECE 2013

Carriers in an P-t!#e Semiconductor

ECE ELEC3-UST ECE 2013

Electron and (ole Concentrations

ECE ELEC3-UST ECE 2013

Typical doping densities fall in the range of 1015 to 1018 atoms/cm3

ECE ELEC3-UST ECE 2013

ECE ELEC3-UST ECE 2013

Summar! o% C arge Carriers

ECE ELEC3-UST ECE 2013

ECE ELEC3-UST ECE 2013

ECE ELEC3-UST ECE 2013