Week

13 Quiz 2: MOSFET IV Characteristics II

ECE 606: Solid State Devices
Mark Lundstrom
Purdue University, Spring 2013

Answer the four multiple choice questions below by choosing the one, best answer.

1) How does the average velocity of charge carriers vary with position along the channel
of a modern MOSFET under large drain to source voltage?
a) The average velocity is constant from the source to the drain.
b) The average velocity increases from the source to the drain.
c) The average velocity decreases from the source to the drain.
d) The average velocity reaches a maximum between the source and the drain.
e) The average velocity reaches a minimum between the source and the drain.

2) How does the average velocity of charge carriers vary with position along the channel
of a modern MOSFET under small drain to source voltage?
a) The average velocity is constant from the source to the drain.
b) The average velocity increases from the source to the drain.
c) The average velocity decreases from the source to the drain.
d) The average velocity reaches a maximum between the source and the drain.
e) The average velocity reaches a minimum between the source and the drain

3) If we measure the IV characteristics of a transistor, what is the signature of velocity
saturation inside the MOSFET?
a) The drain current increases as (VGS VT ) .
1/2

b)
c)
d)
e)
4)

The drain current increases as (VGS VT ) .

1

The drain current increases as (VGS VT ) ..

3/2

The drain current increases as (VGS VT ) .

2

The drain current increases as (VGS VT ) .

5/2

What is velocity overshoot?
a) A channel velocity under subthreshold conditions that exceeds nE y .
b) A channel velocity in the linear region that exceeds nE y .
c) A channel velocity in the saturation region that exceeds sat .
d) A channel velocity in the saturation region that exceeds the ballistic velocity.
e) A channel velocity in the saturation region conditions that exceeds the speed of
light.

Turn in to Ms. Wanda Dallinger, EE-326 by Friday, April 15.