VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET

TYPE VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1

RDS(on) 120 m

Ilim

Vclamp

3.5 A

40 V

SOT-223

SO-8

n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT

3 1
1

3 2

PIN

n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE

TO251 (IPAK) TO252 (DPAK) ORDER CODES: SOT-223 VNN3NV04 SO-8 VNS3NV04 TO-252 (DPAK) VND3NV04 TO-251 (IPAK) VND3NV04-1

POWER MOSFET (ANALOG DRIVING)

n COMPATIBLE WITH STANDARD POWER

MOSFET DESCRIPTION The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, BLOCK DIAGRAM

intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
DRAIN

2 Overvoltage Clamp

INPUT

Gate Control

Over Temperature

Linear Current Limiter

3
SOURCE
FC01000

February 2003

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ABSOLUTE MAXIMUM RATING
Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5K, C=100pF) Electrostatic Discharge on output pin only (R=330, C=150pF) Total Dissipation at Tc=25C Operating Junction Temperature Case Operating Temperature Storage Temperature SOT-223 Value SO-8 DPAK/IPAK Internally Clamped Internally Clamped +/-20 220 Internally Limited -5.5 4000 16500 7 8.3 Internally limited Internally limited -55 to 150 35 Unit V V mA A A V V W C C C

CONNECTION DIAGRAM (TOP VIEW)

SO-8 Package (*)

SOURCE SOURCE SOURCE INPUT

DRAIN DRAIN DRAIN

DRAIN

(*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.

CURRENT AND VOLTAGE CONVENTIONS ID VDS

DRAIN IIN RIN INPUT SOURCE

VIN

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THERMAL DATA
Symbol Rthj-case Rthj-lead Rthj-amb
(*) When

Parameter Thermal Resistance Junction-case}}} Thermal Resistance Junction-lead Thermal Resistance Junction-ambient MAX MAX MAX

SOT-223 18 70(*)

Value SO-8 DPAK 3.5 15 65(*) 54(*)

IPAK 3.5 100

Unit C/W C/W C/W

mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 m thick) connected to all DRAIN pins.

ELECTRICAL CHARACTERISTICS (-40C < Tj < 150C, unless otherwise specified) OFF
Symbol VCLAMP VCLTH VINTH IISS VINCL IDSS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=1.5A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V A V A

ON
Symbol RDS(on) Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=1.5A; Tj=25C VIN=5V; ID=1.5A Min Typ Max 120 240 Unit m

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ELECTRICAL CHARACTERISTICS (continued) (Tj=25C, unless otherwise specified) DYNAMIC
Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=1.5A VDS=13V; f=1MHz; VIN=0V Min Typ 5.0 150 Max Unit S pF

SWITCHING
Symbol td(on) tr td(off) tf td(on) tr td(off) tf (dI/dt)on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions VDD=15V; ID=1.5A Vgen=5V; Rgen=RIN MIN=220 (see figure 1) VDD=15V; ID=1.5A Vgen=5V; Rgen=2.2 K (see figure 1) VDD=15V; ID=1.5A Vgen=5V; Rgen=RIN MIN=220 VDD=12V; ID=1.5A; VIN=5V Igen=2.13mA (see figure 5) Min Typ 90 250 450 250 0.45 2.5 3.3 2.0 4.7 8.5 Max 300 750 1350 750 1.35 7.5 10.0 6.0 Unit ns ns ns ns s s s s A/s nC

SOURCE DRAIN DIODE

Symbol VSD (*) trr Qrr IRRM Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions ISD=1.5A; VIN=0V ISD=1.5A; dI/dt=12A/s Min Typ 0.8 107 37 0.7 Max Unit V ns C A

VDD=30V; L=200H Reverse Recovery Current (see test circuit, figure 2)

PROTECTIONS (-40C < Tj < 150C, unless otherwise specified)

Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy Test Conditions VIN=5V; VDS=13V VIN=5V; VDS=13V Min 3.5 Typ 5 10 150 135 10 100 175 200 Max 7 Unit A s C C mA mJ

VIN=5V; VDS=13V; Tj=Tjsh starting Tj=25C; VDD=24V VIN=5V Rgen=RIN MIN=220; L=24mH (see figures 3 & 4)

15

20

(*) Pulsed: Pulse duration = 300s, duty cycle 1.5%

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PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the users standpoint is that a small DC current IISS (typ. 100A) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 C, a typical value being 170 C. The device is automatically restarted when the chip temperature falls of about 15C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

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Fig.1: Switching Time Test Circuit for Resistive Load

VD Rgen Vgen

ID 90%

tr td(on)

10% td(off)

tf t

Vgen

Fig.2: Test Circuit for Diode Recovery Times

A D I

A
FAST DIODE

OMNIFET
S B

L=100uH B

220 Rgen
I

VDD

OMNIFET
S

Vgen

8.5

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Thermal Impedance for DPAK/IPAK

Thermal Impedance for SOT-223

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Fig. 3: Unclamped Inductive Load Test Circuits Fig. 4: Unclamped Inductive Waveforms

RGEN VIN PW

Fig. 5: Input Charge Test Circuit

VIN

GEN

ND8003

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Source-Drain Diode Forward Characteristics
Vsd (mV)
1100 1050

Static Drain Source On Resistance

Rds(on) (mohms)
1000 900

Tj=-40C

Vin=0V
1000 950 900 850 800 750 700 650 600 0 1 2 3 4 5 6 7 8 9 10 11 12 800 700 600 500 400 300

Vin=2.5V

Tj=25C

Tj=150C
200 100 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55

Id (A)

Id(A)

Derating Curve

Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mohms)
300 275 250 225 200 175 150 125 100 75 50 25 0 3 3.5 4 4.5 5 5.5 6 6.5
Id=3.5A Id=1A

Tj=150C

Tj=25C Tj=-40C

Id=3.5A Id=1A Id=3.5A Id=1A

Vin(V)

Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mohms)
250 225 200 175 150 125 100 75 50

Transconductance
Gfs (S)
11 10

Id=1.5A

9 8 7

Vds=13V

Tj=-40C Tj=25C Tj=150C

Tj=150C
6 5 4 3

Tj=25C
2

Tj=-40C
25 0 3 3.5 4 4.5 5 5.5 6 6.5

1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Vin(V)

Id (A)

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Static Drain-Source On Resistance Vs. Id
Rds(on) (mohms)
250 225

Transfer Characteristics
Idon (A)
6 5.5

Vin=5V
200 175 150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 4

Vds=13.5V

Tj=150C
4.5 4

Tj=150C
3.5 3

Tj=25C

2.5 2 1.5

Tj=-40C

Tj= - 40C

Tj=25C

1 0.5 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

Id (A)

Vin (V)

Turn On Current Slope

di/dt(A/us)
5 4.5 4 3.5 3 2.5 2 1.5 1

Turn On Current Slope

di/dt(A/usec)
1.75

Vin=5V Vdd=15V Id=1.5A

1.5

1.25 1

Vin=3.5V Vdd=15V Id=1.5A

0.75 0.5

0.25
0.5 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500

0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500

Rg(ohm)

Rg(ohm)

Input Voltage Vs. Input Charge

Vin (V)
9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11

Turn off drain source voltage slope

dv/dt(V/usec)
300 275

Vds=1V Id=1.5A

250 225 200 175 150 125 100 75 50 25 0 0 250 500 750 1000 1250 1500

Vin=5V Vdd=15V Id=1.5A

2000 1750 2250

2500

Qg (nC)

Rg(ohm)

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Turn Off Drain-Source Voltage Slope
dv/dt(V/usec)
300 275 250 225 200 175 150 125 100 75 50 100 25 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 50 0 5 10 15 20 25 30 35 150 200

Capacitance Variations
C(pF)
350

Vin=3.5V Vdd=15V Id=1.5A

300

f=1MHz Vin=0V
250

Rg(ohm)

Vds(V)

Switching Time Resistive Load

t(usec)
4 3.5 3 2.5 2

Switching Time Resistive Load

t(nsec)
900 800

Vdd=15V Id=1.5A Vin=5V

td(off)
700

tr tr

Vdd=15V Id=1.5A Rg=220ohm

600 500

tf
1.5

400

td(off)
300

1 0.5 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

td(on)

200 100

tf td(on)

Rg(ohm)

Vin(V)

Output Characteristics
Id (A)
5 4.5 4 3.5 3 2.5 2 1.5 1
Vin=5V Vin=4V

Normalized On Resistance Vs. Temperature

Rds(on) (mOhm)
4

3.5

3
Vin=3V

Vin=5V Id=1.5A

2.5

1.5

1
0.5 0 0 1 2 3 4 5 6 7 8 9 10

0.5 -50 -25 0 25 50 75 100 125 150 175

Vds (V)

Tc )C)

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Normalized Input Temperature
Vinth (V)
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 175

Threshold

Voltage

Vs.

Normalized Current Temperature

Ilim (A)
10 9

Limit

Vs.

Junction

Vds=Vin Id=1mA

8 7 6 5 4 3 2 1 0 -50 -25

Vin=5V Vds=13V

25

50

75

100

125

150

175

Tc (C)

Tc (C)

Step Response Current Limit

Tdlim(usec)
13 12.5 12 11.5 11 10.5 10 9.5 9 8.5 8 7.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5

Vin=5V Rg=220ohm

Vdd(V)

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TO-251 (IPAK) MECHANICAL DATA

mm. MIN. 2.2 0.9 0.7 0.64 5.2 0.3 0.95 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 TYP MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033

DIM. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2

H C A C2 L2 D B3 B6 A1 L
= =

B5

A3
=

B2

G
=

L1

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TO-252 (DPAK) MECHANICAL DATA

DIM. A A1 A2 B B2 C C2 D D1 E E1 e G H L2 L4 R V2 Package Weight 0 0.60 0.2 8 Gr. 0.29 4.40 9.35 0.8 1.00 6.40 4.7 2.28 4.60 10.10 mm. MIN. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.1 6.60 TYP MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20

P032P

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SOT-223 MECHANICAL DATA

mm. DIM. MIN. A B B1 c D e e1 E H V A1 0.02 0.1 3.3 6.7 0.6 2.9 0.24 6.3 0.7 3 0.26 6.5 2.3 4.6 3.5 7 3.7 7.3 10 (max) 0.0008 0.004 0.13 0.264 TYP MAX. 1.8 0.85 3.15 0.35 6.7 0.024 0.114 0.009 0.248 0.027 0.118 0.01 0.256 0.09 0.181 0.138 0.276 0.146 0.287 MIN. TYP. MAX. 0.071 0.033 0.124 0.014 0.264 inch

0046067

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SO-8 MECHANICAL DATA

mm. DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M F 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 inch

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SOT-223 TAPE AND REEL SHIPMENT (suffix 13TR)

REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 12.4 60 18.4

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 12 4 8 1.5 1.5 5.5 4.5 2

All dimensions are in mm.

End

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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SO-8 TUBE SHIPMENT (no suffix)

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)

All dimensions are in mm.

100 2000 532 3.2 6 0.6

TAPE AND REEL SHIPMENT (suffix 13TR) REEL DIMENSIONS

Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 12 4 8 1.5 1.5 5.5 4.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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DPAK FOOTPRINT
A

TUBE SHIPMENT (no suffix)

1 .6

6 .7

1 .8

3 .0

2 .3 6 .7 2 .3
B

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1) All dimensions are in mm.

75 3000 532 6 21.3 0.6

TAPE AND REEL SHIPMENT (suffix 13TR)

REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 16.4 60 22.4

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 8 1.5 1.5 7.5 6.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

IPAK TUBE SHIPMENT (no suffix)

A C

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)

All dimensions are in mm.

75 3000 532 6 21.3 0.6

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VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

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