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4.1 Introduction
Understand the element description for MOSFETs Understand the meaning and significance of the various parameters in SPICE model levels 1 through 3 for MOSFETs Understand the basic capacitance models Have a general notion of BSIM model parameters Become award of some newer models Understand the use and shortcomings of the models covered
MOSFET element description and .MODEL statements M1 3 1 0 0 NMOD L=1U W=10U AD=120P PD=42U MDEV32 14 9 12 5 PMOD L=1.2U W=20U .MODEL NMOD NMOS (LEVEL=1 VTO=1.4 + KP=4.5E-5 CBD=5PF CBS=2PF) .MODEL PMOD PMOS (VTO=-2 KP=3.0E-5 + LAMBDA=0.02 GAMMA=0.4 CBD=4PF CBS=2PF + RD=5 RS=3 CGDO=1PF CGSO=1PF CGBO=1PF)
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1.2 micron CMOS model (Level 3) NMOS .MODEL CMOSN NMOS LEVEL=3 PHI=0.600000 TOX=2.1200E08 XJ=0.200000U +TPG=1 VTO=0.7860 DELTA=6.9670E-01 LD=1.6470E-07 KP=9.6379E-05 +UO=591.7 THETA=8.1220E-02 RSH=8.5450E+01 GAMMA=0.5863 +NSUB=2.7470E+16 NFS=1.98E+12 VMAX=1.7330E+05 ETA=4.3680E-02 +KAPPA=1.3960E-01 CGDO=4.0241E-10 CGSO=4.0241E-10 +CGBO=3.6144E-10 CJ=3.8541E-04 MJ=1.1854 CJSW=1.3940E-10 +MJSW=0.125195 PB=0.800000 PMOS .MODEL CMOSP PMOS LEVEL=3 PHI=0.600000 TOX=2.1200E08 XJ=0.200000U +TPG=-1 VTO=-0.9056 DELTA=1.5200E+00 LD=2.2000E-08 KP=2.9352E-05 +UO=180.2 THETA=1.2480E-01 RSH=1.0470E+02 GAMMA=0.4863 +NSUB=1.8900E+16 NFS=3.46E+12 VMAX=3.7320E+05 ETA=1.6410E-01 +KAPPA=9.6940E+00 CGDO=5.3752E-11 CGSO=5.3752E-11 +CGBO=3.3650E-10 CJ=4.8447E-04 MJ=0.5027 CJSW=1.6457E-10 PB=0.850000 4+MJSW=0.217168 -4
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Additional optional HSPICE parameters: <RDC=val RSC=val M=val DTEMP=val GEO=val DELVTO=val> TEMP=val is not used on element line in HSPICE and not used for level 4 or 5 (BSIM) models.
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More empirical and less analytical than Level 2; this permits improved convergence and simpler computation while sacrificing little accuracy. The parameters have beyond those in Level 2 (Note that the following Level 2 parameters are deleted: NEFF, UCRIT, UEXP, and UTRA.) KAPPA Saturation field factor. An empirical factor in the equation for the channel length in saturation. ETA static feedback on VT. Models effect of VDS on VT, i.e., DIBL (Drain-Induce Barrier Lowering) THETA Mobility modulation. Models the effect of VGS on surface mobility. See Table 4.1 of Kang and Leblebici.
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(1/2)
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Level 1 through 3 use the Myer capacitance model (see Kang and Leblebici Fig.3.32) as the default for the channel capacitance with the option of the Ward model (see Kang and Leblebici Fig.4.8) in Levels 2 and 3. For the source and drain capacitances, note the junction equation with reverse bias V with VT, the thermal voltage, I=Is(eV/VT-1)=-Is for V-4VT and recall that Cj =Cj0/(1-V/0)m where m = 1/2 for an abrupt junction and m = 1/3 for a graded junction. The parameters: IS Bulk junction saturation current. JS Bulk junction saturation current density (used with junction areas)
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More SPICE Models HSPICE Level 28, BSIM2, BSIM3 HSPICE Level 13 is BSIM HSPICE Level 28 - a very popular modification of BSIM, but can only be used in HSPICE BSIM2 (HSPICE Level 39) typical model today for those not using HSPICE BSIM3 Version 3.2 (HSPICE Level 49) a complex new public domain model that is frequently used today. This is our model unless otherwise specified.
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Summary
Learned the element description line for MOSFET Reviewed the first generation SPICE model parameters, levels 1, 2, and 3 Reviewed the device capacitances and associated parameters for the BSIM model Obtained a sense of the form of the parameters for the BSIM model Obtained an awareness of some of the newer models Obtained a comparative viewpoint of the models and their use.
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