CIRCUITS AND

6.002 ELECTRONICS

Energy and Power

6.002 Fall 2000 Lecture 22 1

 Why worry about energy?

small batteries
Æ good

Today:
„ How long will the battery last?
in standby mode
in active use
„ Will the chip overheat and self-destruct?

6.002 Fall 2000 Lecture 22 2

 Look at energy dissipation in
MOSFET gates
VS

+
+ C vO
vI
– –

C: wiring capacitance and

CGS of following gate

Let us determine
standby power
active use power
Let’s work out a few related examples first.

6.002 Fall 2000 Lecture 22 3

 Example 1: I
+
V +
– R V
–

V2
Power P = VI =
R

Energy dissipated in time T

E = VIT

6.002 Fall 2000 Lecture 22 4

 Example 1:

for our gate

VS VS
RL
RL
vO
vI high vO vI low
RON RON

2
VS
P= P=0
RL + RON

6.002 Fall 2000 Lecture 22 5

 Example 2:
Consider
R1
S1 S2
VS +
– C R2

T
T1 T2

S1 closed S1 open
S 2 open S 2 closed
t

Find energy dissipated in each cycle.

Find average power P.

6.002 Fall 2000 Lecture 22 6

 T1 : S1 closed, S2 open

i
assume
R1 vC = 0 at t = 0
VS +
– +
C vC
–

vC i
VS VS −t
VS R1C
R1 e
R1

t t

6.002 Fall 2000 Lecture 22 7

Total energy provided by source during T1
T1

E = ∫ VS i dt
0

T1 2 −t
VS
=∫ e R1C
dt
0
R1
2 −t T1
VS
=− R1C e R1C

R1 0

−T1
 
= C VS  1 − e 
2 R1C
 
 

2
≈ C VS if T1 >> R1C
I.e., if we wait long enough

1 2
C VS stored on C ,
2 Independent
1 of R!
2
E1 = C VS dissipated in R1
2

6.002 Fall 2000 Lecture 22 8

 T2 : S2 closed, S1 open

+
vC C R2
–

Initially, vC = VS (recall T1 >> R1C)

So, initially,
1
energy stored in capacitor = CVS
2

Assume T2 >> R2C

So, capacitor discharges ~fully in T2
So, energy dissipated in R2 during T2
1 2
E2 = CVS
2

E1, E2 independent of R2 !

6.002 Fall 2000 Lecture 22 9

 Putting the two together:
Energy dissipated in each cycle

E = E1 + E2
1 2 1 2
= CVS + CVS
2 2
2
E = CVS energy dissipated in
charging & discharging C

Assumes C charges and discharges fully.

Average power
E
P=
T
2
CVS
=
T
2
= CVS f
1
frequency f =
T
6.002 Fall 2000 Lecture 22 10
 Back to our inverter —
VS
RL
vO
vIN RON C

What is P for the following input?

vIN

T T
2 2
t
T 1
T=
f

6.002 Fall 2000 Lecture 22 11

 Equivalent Circuit
RL

VS +
– C
RON

What is P for the following input?

vIN

T T
2 2
t
T 1
T=
f

6.002 Fall 2000 Lecture 22 12

What is P for gate?
We can show (see section 12.2 of A & L)
2 2
VS 2 RL
P= + CVS f
2( RL + RON ) (RL + RON )2
when RL >> RON
2
VS
P=
2
+ CVS f e r
2 RL mb
e
rem
e r
mb
me
re
P STATIC P DYNAMIC
independent of f. related to switching
MOSFET ON half capacitor
the time.

6.002 Fall 2000 Lecture 22 13

 What is P for gate?
when RL >> RON
2
VS 2
P= + CVS f
2 RL
In standby mode,
In standby mode,
fÆ0,
half the gates in a
so dynamic power
chip can be
is 0
assumed to be on.
So P STATIC per
gate is still VS2 .
2RL
Relates to standby
power.

6.002 Fall 2000 Lecture 22 14

 Some numbers…
a chip with 106 gates clocking
at 100 MHZ C =1f F
RL = 10 kΩ
f = 100 × 10 6
VS = 5 V
25
P = 10 6  + 10 −15
× 25 × 100 × 10 6

 2 × 10
4

= 10 6 [1.25 milliwatts + 2.5 microwatts ]

1.25KW! 2.5W
problem ! not bad
must get rid of this α VS 2
α f
reduce VS
next
lecture 5 V → 1V
2.5 W → 150 mW
6.002 Fall 2000 Lecture 22 15