Chapter6

6.1 The flatband voltage is VFB = Eg/2q-F, where F = (kT/q)ln(NA/ni) = 0.357 V; VFB = 0.56-0.357 = 0.203 V. C FB 1 = = 0.524 Cox 1 + 136/ 1.5x196 x108 Since (Xx) = (Si), therefore Ec(Xx) = Ec(Si) and VFB = -Eg/2q-F = -0.56-0.357 = -0.917 V VFB(a) = 0.203 V, CFB/Cox = 0.524, VFB(b) = -0.917 V 6.2 The flatband voltage is given by V FB = MS Qf 1 tox qN f t ox ott 2 ox (x / t ) (x)dx = ox ot MS Cox C ox 0 K ox o 2K ox o

It is plotted below. At tox = 0, VFB = MS = 0.3 V. Since this curve is nonlinear, we cannot extract Nf or ot/q. Differentiating the equation with respect to tox , gives dV FB qN f t = ot ox dt ox Kox o Kox o This curve is also plotted below. From the intercept we find -qNf/Koxo = -23168, giving Nf = 5x1010 cm-2. From the slope we find -2.317x1010 = ot/Koxo giving ot/q = 5x1016 cm-3. Since ot is uniformly distributed in the oxide, Not = (ot/q)tox = 5x1011 cm-2.

MS = 0.3 V, Nf = 5x1010 cm-2, ot/q = 5x1016 cm-3, Not = 5x1011 cm-2 6.3 When the gate is the same doping density as the substrate, there is an additional capacitance due to the gate in series with the usual Cox in series with Csubstr, i.e., C=Cgate//Cox//Csubstr. When the substrate depletes, the gate also depletes and when the substrate accumulates so does the gate. At flatband, where the bands of both substrate and gate are flat, VFB=-2F, where 36

F=(kT/q)ln(NA/ni ). Hence the net capacitance is Cox in series with CFB in series with CFB. The overall normalized capacitance is shown below. 2F=0.6 V.

6.4 When the gate is the same type and doping density as the substrate, there is an additional capacitance due to the gate (Cs1) in series with the usual Cox in series with Cs2 (substrate). When the substrate depletes, the gate inverts and vice versa. At VG=0, both substrate and gate are at flatband; hence the net capacitance is Cox in series with CFB in series with CFB. The overall normalized capacitances are shown below.
` `

For all three capacitances in series, we have

` `

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6.5 (a) With Cox = Koxo/tox = 8.6x10-8 F/cm2, we get

(b) After B-T stress, all of the negative charge is at the gate side of the oxide and all of the positive charge is at the substrate side of the oxide. Hence

VFB(a) = 0.81 V; VFB(b) = - 0.93 V 6.6 Divide the contaminated device into two equal halves, of which one is shifted by -2 V. The Chf/Cox-VG curves of the two parallel capacitors are drawn and the net capacitance is the sum.

6.7 (a) At flatband, Clf/Cox = 1/(1+Cox/Clf) = 1/(1+KoxLD/Kstox), where the Debye length is LD = [kTKso/q2(p+n)]1/2 = [kTKso/q22ni]1/2 29 m in Si at room temperature. Since LD>>tox we find Clf/Cox 0 at flatband. For VG lower or higher than VFB, the Clf/Cox - VG curve is symmetrical with respect to VG=0. (b) The width of the curve decreases slightly.

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Chapter7
7.1 Calculate SRH, rad, Auger, and r and plot.
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7.2 Solve

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7.3 (a) (b)

B(intercept) = 6.65 ms, sr(slope=2sr) = 1 cm/s B(intercept) = 1.05 ms, D(slope=2D) = 36.5 cm2/s.

7.4 Choose sr , then solve the equation Knowing determine eff, using

for . Equation solvers will do this. . Repeat for other values of sr.

7.5 NA=1015 cm-3 gives =13.6 cm, giving rdk=410 . For ?n(0)=1014 cm-3 (low-level injection), the lifetime can be extracted from any part of the curve. For ?n(t)=?n(0)exp(-t/), ln(? n(t)=ln(?n(0)-t/. To obtain we need the slope which is d[ln(?n(t)]/dt=-1/. However, for higher ?n(0) the curve becomes nonlinear and one must use that part of those curves where the slope becomes linear. Note all three slopes are identical in that regime. 40

7.6 Convert wavelength to absorption coefficient using Eq. (7.53); then plot versus 1/.
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The intercept is From

Ln = 1.75x10-2 cm = 175 m

n =

(1 R) L n d n(s 1 + Dn / L n ) 17 3 1 = = 1.145x0 cm s (s1 + Dn / L n )(L n + 1/ ) d(1/ ) (1 R)L n

s1 = 1.38x105 cm/s

7.7 The SPV plots are:

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Curve fitting gives: Ln=100 m, s1=100 cm/s: Ln=100 m, s1=10,000 cm/s: Ln=10 m, s1=100 cm/s:

y=4.60x1013+4.51x1015 x Ln=100 m, s1=100 cm/s y=1.93x1014+1.89x1016 x Ln=100 m, s1=10,000 cm/s y=4.55x1014+4.40x1017 x Ln=10 m, s1=100 cm/s

7.8 n=1/(nvthNT), Ln=(Dnn)1/2, no=ni2/po, Plot versus 1/. The minority carrier diffusion lengths are the intercepts on the 1/ axis.

Ln(Fe) = 0.0074 cm = 74 m; Ln(Fe-B) = 0.0245 cm = 245 m 7.9 First calculate Cox=108.3 pF, then form (Cox/C)2, then differentiate to form -d(Cox/C)2/dt. From the table, we find for large t, CCf=17.65 pF. Then form (Cf/C-1) and plot -d(Cox/C)2/dt versus (Cf/C-1).

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The slope of this plot is m=1.08 and the generation lifetime is g = 2niCox/mNACf . g = 325 s. 7.10 The pulsed MOS capacitor is shown when the gate is pulsed from 0 to VG1. At t=0 the space-charge region is widest and gradually decreases to its final value Winv. Electron-hole pairs are generated during the entire time 0=t=tf. The current that results is highest at t=0 and gradually decreases to zero at t=tf. The I-t curve has the general shape shown on the figure below.

7.11 (a) The grounded diode is a source of minority carriers. C-VG: the low-frequency curve is observed since minority carriers are supplied from the diode. C-t: the capacitance returns very quickly to equilibrium. (b) The open-circuited diode plays no role. C-VG: the conventional high-frequency curve is observed. C-t: the capacitance returns normally to equilibrium. (c) The reverse-biased diode is a sink of minority carriers; no channel can form under the gate. C-VG: the deep-depletion high-frequency curve is observed. C-t: the capacitance does not return to equilibrium at all.

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44

Chapter8
8.1 From the ID-VG curve we find VT = VGi-VD/2 = 0.7 V. Using eff=LgD/WCox(VG-VT), the eff versus VG curve gives o = 475 cm2Vs. A plot of o/eff versus VG gives = 0.04 V-1.
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Considering the gate-voltage dependence of the effective mobility, the transconductance becomes

and the modified field-effect mobility FE can be written as

FE and FE are shown below and compared to eff. Note that FE is similar to eff.
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8.2 From the ID-VDS data plot ID vs. VGS for low VDS and find the threshold voltage as VT=0.7 V. 45

The slopes of the ID-VDS data are the drain conductance gD. Find eff from the equation

eff vs. (VGS-VT) is shown below. The intercept is o=233 cm2/Vs. The plot o/eff vs. (VGS-VT) is also shown below. Its slope is =0.04 V-1.

VT = 0.7 V, o = 233 cm2/Vs, = 0.04 V-1 8.3 The threshold voltage is . The transconductance is . For non-constant eff, both drain current and eff degrade.

8.4 When the minority carrier pulse has reached x1 it has broadened. O What material parameters can be determined with this experiment? One can determine Dn from the pulse width, n from the pulse area, and n from the delay time t1.

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8.5 A sheet of electrons and holes is generated at x=0.5 mm at t=0. These carriers drift in the electric field. The electron velocity is 107 cm/s and the hole velocity is 5x106 cm/s. Electrons: , holes: , In=2Ip.

8.6 (a) Electrons drift to the right; td = W/vn = 10-2/107 = 10-9 s Holes drift to the left; td = W/vp = 10-2/5x106 = 2x10-9 s (b) I=Q/td=qn(or p)/td=1.6x10-19x6.25x106/td=10-12/td In = 10-12/10-9 = 10-3 A, Ip = 10-12/2x10-9 = 5x10-4 A

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8.7 Imagine the charge to be made up of charge planes and add the current due to each charge plane.

8.8 One way to solve this problem is consider the currents due to individual electrons and add the currents. The electron at the very left flows the longest until it reaches the n+ side giving current I1. The next electron flows for a slightly shorter time giving I2, etc. By adding the currents in the limit of very low current for each, we obtain the heavy line below.

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8.9 The pulse shape is given by determined by . Equating this term to 1/2 gives

. The x-dependent behavior is or .

The time spread t is related to by t=2/v, where v=E=d/t. This leads to

8.10 Starting with giving

, take the ln of this expression and then differentiate, and or

Using the original ID equation ; Hence and since dVD/dVG=0. This gives the desired result

gives .

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Chapter9
9.1 From right figure we find for the wavelength range where T is constant, T=0.55. From Eq.(2) with =0

From R = [(n0-n1)/(n0+n1)]2 we find n1=0.3 or 3.35 for R=0.29 and n0=1. Since n1 cannot be less than unity, it must be n1=3.35. From left figure and d=(2n1?(1/))-1 we find d=0.5/[3.35x(2025-1525)]=3x10-4 cm=3 m. To find 1 we use the equation

with T=0.25, R=0.29 and d=3x10-4 cm, we find 1=2500 cm-1, and N1=4x1015x2500=1019 cm-3. From the - curve at low , E=1.24/ and as given in the table below: (m) E (eV) T (cm-1) 0.883 1.405 0.0338 100 0.879 1.41 0.0726 780 0.876 1.415 0.1455 2300 0.873 1.42 0.2610 4200 0.870 1.425 0.4251 6500 0.867 1.43 0.5359 9500

Extrapolating to 1/2=0 gives E=Eg=1.4 eV. R = 0.29, n1 = 3.35, d = 3 m, 1 = 2500 cm-1, N1 = 1019 cm-3, Eg = 1.4 eV 9.2 From that part of the data with T=0.504, where =0, we find

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From R = [(n0-n1)/(n0+n1)]2 we find n1 = 0.27 or 3.7 for R = 0.33 and n0 = 1. Since n1 cannot be less than unity (index of refraction of air is unity), it must be that n1 = 3.7. d = 1/[2n1?(1/)] giving d = 0.5/[3.7x14.3] = 94.5x10-4 cm = 94.5 m. To find i we use the equation

with T = 0.482, R = 0.33 and d = 94.5x10-4 cm, we find i = 4.18 cm-1, and Ni = 3x1017x4.18 = 1.25x1018 cm-3. R = 0.33, n1 = 3.7, d = 94.5 m, i = 4.18 cm-1, Ni = 1.25x1018 cm-3 9.3 From that part of the data with T=0.516, where =0, we find from Eq.(2)

From R = [(n0-n1)/(n0+n1)]2 we find n1=0.28 or 3.6 for R=0.319 and n0=1. Since n1 cannot be less than unity, it must be that n1=3.6. From the figure and d=(2n1?(1/))-1 we find d=0.5/[3.6x1.95]=710x10-4 cm=710 m. To find i we use the equation

with T=0.407, R=0.319 and d=710x10-4 cm, we find i=2.8 cm-1, and Ni=3x1017x2.8= 8.4x1017cm-3. R = 0.319, n1 = 3.6, d = 710 m, i = 2.8 cm-1, Ni = 8.4x1017 cm-3

9.4 (a) Solve the equation for d1. This gives d1 = 8x10-6 cm = 0.08 m = 80 nm (b)

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9.5 (a) Solve the equation for n1. This gives n1=1.7. (b) Plot R versus for =600 nm.

9.6 Averaging this expression gives

From integral tables

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giving in our case, with

With 9.7

, we have

, which is the desired result.

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For the eye h=2 cm, 2d=2.5x10-3 cm. Hence tan()=d/h=1.25x10-3/2=6.25x10-4. From the figure we find: tan() = 6.25x10-4=d/h=d/30000 2d=37.5 ft 2d = 11.4 m

9.8 In general:

In this case

Evaluating this function for (a) f2 = 2f1, and (b) f2 = 10f1, gives the plots for A=1 and f1=1.

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54

Chapter10
10.1
Re = 4.28x106 E1.75 = 1.59x106 E 1.75 for Al with =2.7 g/cm3.

For E=10 keV, Re=8.9x10-5 cm or 0.89 m. dAl = 8.9x10-5 cm

10.2

(1) (2) (3)

Solving (3) for sin() gives

Substituting for cos() into (2) gives or

; solving for v22 gives Substituting v22 into (1) gives

where R/M1/M2. Solving for v1 gives

For M1<M2, we choose the + sign, giving

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10.3 The He ion energy is 2 MeV and the angle is 164.

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For X1 on Y: [So]=45.5 eV/, E1=0.332 MeV, E2=0.91 MeV, E3=1.138 MeV, For X2 on Y: [So]=133.6 eV/, E1=0.338 MeV, E2=1.578 MeV, E3=1.847 MeV

Through trial and error or using quadratic equation: 1) K1=0.569; R1=0.143=m/M1; M1=4/0.143=28 Si 2) K2=0.924; R2=0.02=m/M2; M2=4/0.02=200 Au From Eq.(10.25) ?E=E3-E2=[So]d or d=?E/[So], also ?E=(1+K)Eloss assuming ?Ein=?Eout=Eloss; hence Eloss=[So]t/(1+K) 1) ?E1=2.28x105 eV d=2.28x105/45.5=5000 2) ?E2=2.69x105 eV d=2.69x105/133.6=2000 Substrate: From Eq.(10.24): E1 = E0K3 - (?EinK3+?Eout) = (E0-Eloss)K3-Eloss K3=(E1+Eloss)/(E0-Eloss) 1) K3=(0.332x106+0.145x106)/(2x106-0.145x106)=0.257 2) K3=(0.338x106+0.14x106)/(2x106-0.14x106)=0.257

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K3=0.257 corresponds to R3=0.333, hence M3=4/0.333=12 which is carbon. Layer 1: Silicon, 5000 ; Layer 2: Gold, 2000 ; Substrate: Carbon

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