Fast Recovery Epitaxial Diode (FRED)

DSEI 60

IFAVM = 60 A VRRM = 600 V trr = 35 ns

VRSM V 600

VRRM V 600

Type

TO-247 AD
C

DSEI 60-06A

A = Anode, C = Cathode

Symbol IFRMS IFAVM x IFRM IFSM

Test Conditions TVJ = TVJM TC = 70C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

Maximum Ratings 100 60 800 550 600 480 520 1510 1490 1150 1120 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm g

Features
G

G G G G

TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

G G

International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0

TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque

Applications
G

G G G

166 0.8...1.2 6

G G

Symbol

Test Conditions TVJ = 25C TVJ = 25C TVJ = 125C IF = 70 A;

Characteristic Values typ. max. 200 100 14 1.5 1.8 1.13 4.7 0.75 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A

Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders

IR

VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM TVJ = 150C TVJ = 25C

Advantages
G G

VF VT0 rT RthJC RthCK RthJA trr IRM

G G G

For power-loss calculations only TVJ = TVJM

High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling

IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C VR = 350 V; IF = 60 A; -diF/dt = 480 A/ms L 0.05 mH; TVJ = 100C

35 19

50 21

2000 IXYS All rights reserved

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036

x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions

DSEI 60, 600 V

Fig. 1 Forward current versus voltage drop.

Fig. 2 Recovery charge versus -diF/dt.

Fig. 3 Peak reverse current versus -diF/dt.

Fig. 4 Dynamic parameters versus junction temperature.

Fig. 5 Recovery time versus -diF/dt.

Fig. 6 Peak forward voltage versus diF/dt.

Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102

Dimensions

Fig. 7 Transient thermal impedance junction to case.

2000 IXYS All rights reserved

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