TSSP4400

GaAs/GaAlAs Infrared Emitting Diode in Sideview Package

Description
TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue grey tinted plastic package with spherical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors.

Features
D D D D D D
High radiant power and high radiant intensity Suitable for high pulse current operation Low forward voltage Angle of half intensity = 22 Peak wavelength lp = 925 nm High reliability
94 8491

Applications
High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN photodiodes or phototransistors. Infrared remote control and free air transmission systems for long transmission distance and medium wide angle requirements in combination with PIN photo diodes or photo modules. Suitable as replacement of CQX47.

Absolute Maximum Ratings

Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.0 170 100 55...+100 55...+100 260 450 Unit V mA mA A mW C C C C K/W

tp/T=0.5, tp=100 ms tp=100 ms

x 5sec, 2 mm from case

TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96

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TSSP4400
Basic Characteristics
Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF VF TKVF IR Cj Ie Ie Min Typ 1.3 2.4 1.3 30 23 300 18 0.8 22 925 50 0.2 800 500 800 500 Max 1.8 3.2 100 10 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns

fe

TKfe

lp Dl

TKlp tr tr tf tf

Typical Characteristics (Tamb = 25_C unless otherwise specified)

250 PV Power Dissipation ( mW ) 200 IF Forward Current ( mA ) 100
94 7941 e

125 100

150 RthJA 100

75 50

50 0 0 20 40 60 80

25 0 0 20 40 60 80 100

94 8029 e

Tamb Ambient Temperature ( C )

Tamb Ambient Temperature ( C )

Figure 1. Power Dissipation vs. Ambient Temperature

Figure 2. Forward Current vs. Ambient Temperature

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TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96

TSSP4400
101 I e Radiant Intensity ( mW/sr ) 102
94 8189 e

1000

I F Forward Current ( A )

tp / T = 0.01, IFM = 2 A 0.02 100 0.05 0.1 0.2 0.5 101 102

100

10

0.1 101 100 101 tp Pulse Duration ( ms ) 100 101 102 103 IF Forward Current ( mA ) 104

94 7947 e

Figure 3. Pulse Forward Current vs. Pulse Duration

104 IF Forward Current ( mA )

Figure 6. Radiant Intensity vs. Forward Current

1000

103

Fe Radiant Power ( mW )
4

100

102

tp = 100 ms tp / T = 0.001

10

101

100 0
94 7952 e

0.1 1 2 3 100
94 7965 e

VF Forward Voltage ( V )

101 102 103 IF Forward Current ( mA )

104

Figure 4. Forward Current vs. Forward Voltage

1.2 V Frel Relative Forward Voltage 1.1 I e rel ; Fe rel IF = 10 mA 1.0 0.9

Figure 7. Radiant Power vs. Forward Current

1.6

1.2 IF = 20 mA 0.8

0.4 0.8 0.7 0 20 40 60 80 100

94 7993 e

0 10 0 10

50

100

140

94 7990 e

Tamb Ambient Temperature ( C )

Tamb Ambient Temperature ( C )

Figure 5. Relative Forward Voltage vs. Ambient Temperature

Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature

TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96

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TSSP4400
1.25 1.0 I e rel Relative Radiant Intensity 0 10 20 30

Fe rel Relative Radiant Power

40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6

0.75 0.5

0.25 IF = 100 mA 0 875 925 975

12757

l Wavelength ( nm )

94 7966 e

Figure 9. Relative Radiant Power vs. Wavelength

Figure 10. Relative Radiant Intensity vs. Angular Displacement

Dimensions in mm
95 11325

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TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96

TSSP4400
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96

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