ECE137A Problem set #1 Problem 1. bipolar transistor biasing. Assume a Vbe(on) of 0.7 volts. a) Vcc beta=100 Vcc=10 Volts.

What base current is required for Ic=1 mA ? Ib Rc If Ic=1 mA, what Rc is required for Vc=5 Volts ?

Vc

(this biasing circuit not recommended)

Vcc Rc

Rb

b) beta=100 Vcc=10 volts We want 200 microamps collector current, and Vce=5 Volts Find Rc and Rb (this biasing circuit not recommended)

Vcc Rc

c) Bias stability of the circuit of problem 1(b). First, keeping the same values for Rb and Rc you found above, compute the collector current and the collector voltage if beta is increased to 200. Second, keeping the same values for Rb and Rc you found above, compute collector current and the collector voltage if beta is returned back to 100 but Vcc is increased 10%. Caution: You must consider the possibility of saturation.

Rb

Vcc Rc Vc Ve Rb2 Ree

Rb1

d) beta=100 Vcc =10 Volts You are to work to the following conditions. Collector voltage Vc= 4 Volts Emitter voltage Ve=2 volts current in Rb2=200 microamps collector current = 2 mA Find Rb1, Rb2, Ree, Rc

Vcc Rc Vc Ve Rb2 Ree

e) Bias stability of the circuit of problem 1(d). First, keeping the same values for Rb1, Rb2, Ree and Rc you found above, compute the collector current and the collector voltage if beta is increased to 200. Second, keeping the same values for Rb1, Rb2, Ree and Rc you found above, compute the collector current and the collector voltage if beta is returned back to 100 but Vcc is increased 10%. Caution: You must consider the possibility of saturation. d) beta is 300 Vee=10 Volts You are to work to the following conditions collector voltage Vc=1 volts emitter voltage is 2 volts 2 mA collector current 200 microamps current in Rb2. Find Rb1, Rb2, Ree, Rc

Rb1

Vee Rb2 Ree Ve Vc Rb1 Rc

Problem 2 MOS Biasing: Vdd

Rg2

Rd

a) The MOSFET has a +0.3 Volt threshold voltage and v satCoxWg =1 mA/V (assume velocity-limited characteristics) Rg1 is 400 kOhms. Vdd is 2.0 Volts. lambda=0 We would like to bias the MOSFET at 1 mA drain current and 1.5 volts between drain and source. Please find the required values of Rg2 and Rd.

Rg1

Vdd

b) Bias stability of the circuit of problem 2(a). First, keeping the same values for Rg1, Rg2, and Rd you found above, compute the drain current and the drain voltage if v satCoxWg is increased to 10%. Second, using the original value v satCoxWg , and keeping the

Rg2

Rd

Rg1

same values for Rg1, Rg2, and Rd you found in 2(a), compute the drain current and the drain voltage if the power supply voltage is increased 10%.

Vss

Rg2

Rs

c) The P MOSFET has a -0.3 V threshold voltagemeaning the gate is 0.3 V negative of the source at the onset of conduction. lambda=0. v satCoxWg = 2 mA/V. Vss=3.3 Volts, and Rg1 has 1 microamp flowing through it.

Rg1

Rd

We would like to bias the MOSFET at 1 mA drain current. We would like to have +2.25 volts source voltage and +0.5 V drain voltage. Find all 4 resistors.

Vss

d) Bias stability of the circuit of problem 2(c) First, keeping the same values for Rg1, Rg2, Rs, and Rd you found above, compute the drain current and the drain voltage if v satCoxWg is increased to 10%. Second, using the original value v satCoxWg , and keeping the

Rg2

Rs

Rg1

Rd

same values for Rg1, Rg2, Rs, and Rd you found in 2(c), compute the drain current and the drain voltage if the power supply voltage is increased 10%.