Microwave Sources

Semiconductor Sources
Reference: Samuel Y. Liao S. M. Sze

Prof. D. Kannadassan, School of Electronics Engineering

ECE102 - Microwave Engineering Fall 2012_13

Semiconductor Microwave Sources

Low Power microwave generators

Transferred Electron Devices (TEDs)

Gunn diode LSA diode InP diode CdTe diode

Avalanche Transit Time Devices (ATTDs)

Read diode IMPATT diode TRAPATT diode BARITT diode

ECE102 - Microwave Engineering Fall 2012_13

Transferred Electron Devices (TEDs)

Transferred electron effect is generally happening when the electron is moving/transferring between various levels of conduction and valance bands When we sweep the voltage across the n-type GaAs specimen (of length L), The current increases initially, it reaches maximum at voltage VP (Peak Potential). Immediately, it starts to decrease till voltage VV (valley voltage). It increases after that. The region where current decrease for increase in voltage (dV/dI = -ve) is called Negative differential resistance (NDR) region. This NDR region is responsible for microwave oscillations. The explanation for the effect is called Transferred Electron Effect.

Drift velocity

NDR

Electric field [KV/cm] Momentum

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Avalanche Transit Time Devices (ATTDs)

After Gunn Oscillators, the first Negative resistance device has been designed was Tunnel Diode, which is proposed with heavily doped p-n junction (later p-i-n configuration). Remember Gunn oscillator doesnt have any p-n junction. ATTDs also working with of p-n junction, but with breakdown at reverse bais for large production of electrons and holes Originally it was proposed as theoretical model by Read, so-called Read Diode, with n+ - p i - p+ configuration. It has two distinct modes:
Impact Ionization effect (IMPATT) Trapped Plasma effect (TRAPATT)

As extension of IMPATT, by extending the length of drift region, the BARITT diodes were developed. Though, DC-to-RF efficiency is less (less than 15%), the very high power and frequency of operations are possible
ECE102 - Microwave Engineering Fall 2012_13 4

Read Diode
Basic working model, usually, has been understood by referring Read diode. In its configuration, first n+-p junction is called Avalanche region. Then an intrinsic region, also called drift region. The charges produced at avalanche region drift over intrinsic region. Final p+ region collects charges from drift region, also called inactive region. At reverse bias, the read diode can produce negative ac resistance, in tern, delivers high power oscillations.
ECE102 - Microwave Engineering Fall 2012_13

Heavily doped

Source: S. Y. Liao

Avalanche Multiplication
At reverse bias, the n+-p junction regions depletion region is always extended till drift region. This is due to lightly doped p region whose depletion region width is much wider than at n+ side. The immobile charges, at junction, forms a high field region, acquires energy at very high reverse bias and move from valance to conduction band. This form electron hole pair. Further production of electron-hole pair, also called avalanche multiplication, takes place at junction as field continue to impact. This rate of multiplications is defined as

Vb-breakdown voltage of junction; V applied voltage and n is numerical factor of material. ,, and are resistivity, mobility and permittivity of space charge region
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ECE102 - Microwave Engineering Fall 2012_13

Working
When total bias voltage (Vdc+Vac) is higher than breakdown voltage (at positive half cycle), the avalanche multiplication occurs as diode is reverse bias. The accumulated charges at n+-p junction said as internal current, it drain into drift region as like a pulse. The charges flow through drift region has been shaped at negative half cycle. This current has got square wave and comes as oscillation.

Remember, the external current is 90o phase lag from internal current

ECE102 - Microwave Engineering Fall 2012_13

IMPATT diode
Practical Read-diode is IMPATT diode, first achieved by Johnston et al. The IMPATT diode has two effects to form negative resistance effect:
The impact ionization (forms internal current with delay of 90o with ac input) drift of internal current form (forms external current with delay of 90o with internal current pulse)

The transits angle or drift region length decides the negative resistance

ECE102 - Microwave Engineering Fall 2012_13

Practical IMPATTs

Source: S. Y. Liao

ECE102 - Microwave Engineering Fall 2012_13

Output power and Efficiency: State-of-art

Source: S. Y. Liao

ECE102 - Microwave Engineering Fall 2012_13

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