APSCOLLEGEOFENGINEERING

SOMANAHALLI,BANGALORE82

DEPARTMENTOFTELECOMMUNICATIONENGINEERING
MULTIPLECHOICEQUESTIONSFORTRANSISTORS(CHAP2)

Jun13

Thecurrentrelationshipbetweentwocurrentgainsinatransistoris
a)=/(1)b)=(1+)/(1)c)=(1)/(1+)d)=(+1)/

Thedcofatransistorisitsa)currentgainb)voltagegainc)powergaind)internalresistance

Inatransistorthecurrentconductionisdueto______carriers.
A)majorityb)minorityc)bothaandbd)none

Inatransistorcircuit,a)IE=ICb)IE>ICc)IE<ICd)IEveryverylessthanIC.

Thetransistoroperatingpointisalongthe_____.(a)xaxis(b)resistanceline(c)loadline(d)yaxis
Jan11
The______transistorisusedforimpedancematching.(a)CB(b)CE(c)CC(d)none

The______transistorhasthehighestpowergain.(a)CE(b)CC(c)CB(d)none

Inatransistorthecurrentconductionisdueto_______carriers.(a)Majority(b)Minority(c)Botha&b
(d)none

Jun11

Whenatransistorisusedasaswitch,itworksinthefollowingregion:
(a)active&cutoff(b)saturation&cutoff(c)saturation&active(d)none
Ifthetransistoramplifierhasavoltagegainof100,iftheinputvoltageis15mV,thentheoutputvoltageis
(a)1.5V(b)15V(c)0.15V(d)1.15V

Thephasedifferencebetweeninputandoutputofanemitterfolloweris(a)inphase(b)outofphase(c)90o
(d)45o

Anamplifierisgenerallyconnectedin_______mode.(a)saturation(b)cutoff(c)active(d)short

Dec11

Thecurrentconductioninbipolarjunctiontransistorisbecauseof(a)electrons(b)holes
(c)bothelectrons&holes(d)current
Incutoffregion,bothbasetocollectorandbasetoemitterjunctionsare_________
(a)forwardbiased(b)ON(c)Reversebiased(d)None

InatransistorIB=30AandIE=10mA.Whatisthevalueof?(a)0.92(b)0.99(c)0.98(d)0.96

InCBmodeofatransistor,whenthereversebiasvoltageincreases,thewidthofdepletionregionalso
increases,whichreducestheelectricalbasewidthcalledas
(a)depletionwidth(b)earlyeffect(c)cutin(d)punchthrougheffect

Thearrowinthegraphicsymbolofatransistordefinesthedirectionof______current.
(a)Base(b)collector(c)emitter(d)none

Incutoffregion,emitterbasejunctionis(a)forwardbiased(b)reversebiased(c)unbiased(d)none

Thecommonbasecurrentgain(dc)ofatransistorisgivenby(a)IC/IB(b)IC/IE(c)IE/IC(d)none

Incommonemitterconfiguration,ICEOisgivenby(a)ICBO(b)ICBO(c)(1+)ICBO(d)None

Bipolarjunctiontransistoris______________controlleddevice
A)voltageB)currentC)powerD)temperature
Jun12
Operatingpointmustbe_________________forproperfunctioningoftransistor
A)increasingB)decreasingC)stableD)high

TheDCloadlineofatransistorisa_____________
A)curvedlineB)negativeslopelineC)positiveslopelineD)zeroslopeline

Inatransistorandarerelatedby_____________
A) =

B) =
C) =
D) =

1+
1
1
1+

Insaturationregion,basetocollectorjunctionis_____(a)reversebiased(b)forwardbiased(c)notbiased
(d)None

TheinputresistanceofaCEmodetransistorismuch_____thanitsoutputresistance.
(a)more(b)less(c)Larger(d)none

Commoncollectorarrangementisgenerallyusedfor_______
(a)Impedancematching(b)voltageamplification(c)currentamplifier(d)none

Thecollectorcurrentinatransistoris5mA.If=140andthebasecurrentis35A,thenleakagecurrentICBOis
(a)10A(b)0.714A(c)0.78A(d)20A

Jun09

Inatransistorthepartheavilydopedis
A)EmitterB)baseC)collectorD)allareequallydoped
Therelationbetweenandgivenby
A)=B) =

C) =

1+

D) =

Inactiveregionthecollectorbasejunctionis
A)ForwardbiasedB)reversebiasedC)drivenfromforwardbiastoreversebiasD)notbiased

InCEconfigurationwhencollectorcurrentiszeroVCE equals
A)

VCC
V
V
B)VCCC) CC D) CC
RC + R E
RC
RE

InaCEconfigurationcircuitifthebaseresistorisopentheQpointwillbeA)inthemiddleoftheloadline
B)attheupperendoftheloadlineC)atthelowerendoftheloadlineD)OFFtheloadline
Dec10
InaBJTthecollectorcurrentis10mAifthecurrentgainis100thebasecurrentis
A)1AB)10AC)100AD)1mA

andinaBJTareconnectedbytheequation
A) =

B) =

C) =
D)BothBandC
1
1+

Inthesaturationregionthecollectorbaseandemitterbasejunctionsare_______biased

A)forwardB)reverseC)unbiasedD)noneofthese
DEC2008
Commonemittercurrentgaindcofatransistorisgivenbya)

IC
I
I
b) E c) C d)noneofthese
IC
IE
IB

Inatransistor,thecurrentconductionisduetoa)Majorityb)Minorityc)bothd)noneofthese

ThestabilityfactorSistherateofchangeofcollectorcurrentwithrespectto________.
A)Reversesaturationcurrentb)collectorcurrentc)emittercurrentd)basecurrent

Thedopingofemitterregionofatransistoris_______thebaseregion.

(a)greaterthan(b)equalto(c)lessthan(d)muchlesserthan
DEC2009
If=0.95,thenthevalueofofthetransistoris_____(a)190(b)19(c)0.05(d)25

Theinputresistanceishighestfor___amplifier(a)CB(b)CC(c)CE(d)None

Forcascading,oneshoulduse____configuration(a)CE(b)CB(c)CC(d)None

Inatransistor,thebaseis
a)aninsulatorb)aconductoroflowresistancec)aconductorofhighresistanced)anextrinsic
semiconductor
Thebaseofatransistorismadethinandisverylightlydopedsothat
a)mostofthechargecarrierscrossovertothecollectorb)averysmallnumberofchargecarriersmay
crossovertothecollectorc)thetransistormaybesavedfrombeingdamagedbylargecurrents
d)noneoftheabove
Inatransistor
a)boththeemitter&collectorareequallydopedb)emitterislightlydopedthanthecollector
c)collectorisheavilydopedthantheemitterd)thebaseismadeverythin&islightlydoped

Thepartofatransistor,whichisheavilydopedtoproducealargenumberofmajoritycarrieris
a)emitterb)collectorc)based)none

Regionwithoutfreeelectrons&holesinapnjunctionis
a)depletionregionb)pregionc)nregiond)junction

Transistorsareprimarilya)currentdrivendevicesb)voltagedrivendevices
c)powerdrivendevicesd)resistancedrivendevices
Thediodeequivalentcircuitofapnptransistoris

Inaproperlybiasedtransistora)bothdepletionregionarelargeb)bothdepletionregionaresmall
c)emitterbasedepletionregionissmall&collectorbasedepletionregionislarge
d)emitterbasedepletionregionislarge&collectorbasedepletionregionissmall

10

Theleakagecurrentinannpntransistorisduetoa)flowofelectronsfromcollectortobase
b)flowofholesfromcollectortobasec)flowofholesfrombasetocollectord)flowofholesfrom
collectortoemitter

11

Whenannpntransistorisusedasanamplifier,thena)electronsflowfromemittertobase
b)electronsflowfrombasetoemitterc)electronsflowfromcollectortobase
d)holesflowfrombasetocollector

12

Inannpntransistorcircuit,thecollectorcurrentis10mA.If90%oftheelectronsemittedreachthe
collector,theemittercurrent(IE)&basecurrent(IB)aregivenby
a)1mA,9mAb)9mA,1mAc)1mA,11mAd)11mA,1mA

13

Thearrowheadinatransistorsymbolalwayspointsthedirectionof
a)holeflowintheemitterregionb)electronflowintheemitterregion
c)majoritychargecarrierflowinemitterregiond)minoritychargecarrierflowinemitterregion

Ifl1,l2andl3arethelengthsoftheemitter,baseandcollectorofatransistor,then
a)l1=l2=l3b)l3<l2>l1c)l3<l1<l2d)l3>l1>l2

14

15

Inatransistorcircuit,
a)IE=ICb)IE>ICc)IE<ICd)IE<<IC

16

Thecorrectrelationshipbetweentwocurrentgainsinatransistoris
a)=/1b)=1+/1c)=1/1+d)=+1/1

17

Theperformanceofatransistorisanalyzedbydrawingthestatic
a)inputcharacteristicsb)outputcharacteristicsc)transfercharacteristicsd)allofthe
above

18

TheslopeofthetransfercharacteristicsintheCEconfigurationgivesthe
a)inputresistanceofthetransistorb)outputresistanceofthetransistorc)ofthetransistor
d)ofthetransistor

19

Theregioninwhichthetransistoroperateswhenitisusedtoamplifyweaksignalis
a)breakdownregionb)saturationregionc)activeregiond)cutoffregion

20

Foratransistor,
a)>b)<c)=d)=1/

21

Foroperationasanamplifier,thebaseofannpntransistormustbe
a)positivewithrespecttotheemitterb)negativewithrespecttotheemitter
c)positivewithrespecttothecollectord)0V

22

Thedcofatransistorisits
a)currentgainb)voltagegainc)powergaind)internalresistance

23

Thebiasconditionforatransistortobeusedasalinearamplifieriscalled
a)forwardreverseb)forwardforwardc)reversereversed)collectorbias

24

Whenafreeelectronrecombineswithaholeinthebaseregion,thefreeelectronbecomes
a)anotherfreeelectronb)amajoritycarrierc)avalanceelectrond)aconductionband
electron

25

Whatisthemostimportantfactaboutthecollectorcurrent?
a)itismeasuredinmillamperesb)itissmallc)Itequalsthebasecurrentdividedbythecurrentgain
d)Itapproximatelyequalstheemittercurrentgain

26

Whileacollectortoemittervoltageisconstantinatransistor,thecollectorchangesby8.2mAwhenthe
emittercurrentchangesby8.3mA.Thevalueofforwardcurrentratiohfe(=)is
a)82b)83c)8.2d)8.3

Whenoperatedincutoff&saturation,thetransistoractslike
a)alinearamplifierb)aswitchc)avariablecapacitord)avariableresistor

27

28

Insaturation,VCEis
a)0.7Vb)equaltoVCCc)minimumd)maximum

29

Thecollectoremittervoltageisusually
a)lessthanthecollectorsupplyvoltageb)equaltothecollectorsupplyvoltage
c)morethanthecollectorsupplyvoltaged)noneofthese

30

Atransistoractslikeadiodeand
a)voltagesourceb)currentsourcec)resistanced)powersupply

31

Thebaseemittervoltageofanidealtransistoris
a)0.7Vb)0.3Vc)1Vd)0V

32

Inthesaturationregion,thecollectoremittervoltageofanidealtransistoris
a)0.7Vb)0.3Vc)1Vd)0V

33

Ifthebaseemitterjunctionisopen,thecollectorvoltageis
a)VCCb)0Vc)0.3Vd)floating

34

Ifthebaseresistorisopen,whatisthecollectorcurrent?
a)0b)1mAc)2mAd)10mA

35

Inthesaturationregion,thecollectorbase&emitterbasejunctionarebiased
a)forwardb)reversec)und)noneofthese

36

Commonemittercurrentgain,dcofatransistorisgivenby
a)IC/IBb)IE/ICc)IC/IEd)noneofthese

37

Inatransistorthecurrentconductionisduetocarriers
a)majorityb)minorityc)bothd)noneofthese

38

39

Incutoff,VCEis
a)0Vb)minimumc)halfofVCCd)equaltoVCC

Thestabilityfactor,S,istherateofchangeofcollectorcurrentwithrespectto
a)reversesaturationcurrentb)collectorcurrentc)emittercurrent
d)basecurrent
Theinteractionofdcloadline&theoutputcharacteristicsofatransistoriscalled
a)Qpointb)Quiescentpointc)operatingpointd)allofthese

40

ReversesaturationcurrentdoublesforeveryoCriseintemperature
a)50b)40c)30d)10

41

Thetransistoroperatingpointisalongthe
a)Xaxisb)resistancelinec)loadlined)Yaxis

42

Thetransistorisusedforimpedancematching
a)CBb)CEc)CCd)noneofthese

43

Thetransistorhasthehighestpowergain
a)CEb)CCc)CBd)noneofthese

44

Inatransistorthecurrentconductionisduetocarriers
a)majorityb)minorityc)bothd)noneofthese

Q.No.
1
2
3
4
5
6
7
8
9
10

110
D
A
D
A
A
A
A
A
C
B

1120
A
D
D
A
B
A
D
D
C
A

2130
A
A
A
C
C
B
D
C
A
B

3140
D
D
A
A
A
A
C
A
D
D

4150
C
C
A
C

The common-emitter configuration (CE) is the arrangement most frequently

used in practical amplifier circuits, since it provides good voltage,
current, and power gain. The common emitter also has a somewhat low input
resistance (500 ohms-1500 ohms), because the input is applied to the


forward-biased junction, and a moderately high output resistance (30
kilohms-50 kilo ohms or more), because the output is taken off the reversebiased junction.
The common-base configuration (CB)is mainly used for impedance matching,
since it has a low input resistance (30 ohms-160 ohms) and a high output
resistance (250 kilohms-550 kilo ohms). However, two factors limit its
usefulness in some circuit applications: (1) its low input resistance and
(2) its current gain of less than 1. Since the CB configuration will give
voltage amplification, there are some additional applications, which require
both a low-input resistance and voltage amplification, that could use a
circuit configuration of this type; for example, some microphone amplifiers.
The common-collector configuration (CC) is used mostly for impedance
matching. It is also used as a current driver, because of its substantial
current gain. It is particularly useful in switching circuitry, since it has
the ability to pass signals in either direction (bilateral operation).The
input resistance for the common collector ranges from 2 kilo ohms to 500
kilo ohms, and the output resistance varies from 50 ohms to 1500 ohms. The
current gain is higher than that in the common emitter, but it has a lower
power gain than either the common base or common emitter. Like the common
base, the output signal from the common collector is in phase with the input
signal. The common collector is also referred to as an emitterfollower because the output developed on the emitter follows the input
signal applied to the base.

1). A Transistor has

a). One P-N Junction b). Two P-N Junction c). Three P-N Junction

4). Four P-N Junction

Ans- Two P-N Junction
2). The number of depletion layer in a Transistor is

a). 1 b). 2 c). 3 d). 4

Ans 2
3). The base of the Transistor is . Doped
None of the above

a). Heavily 2). Lightly 3). Moderately 4).

Ans- Lightly

3). The element that has biggest size in a transistor is

d). Emitter- Base junction

a). Collector b). Emitter c). Base

Ans- Collector

4). In a PNP transistor, the current carriers are a). Acceptor Ions b). Donar ions c). Free electrons
d). Holes

Ans- Holes

5). The Collector of the Transistor is . Doped

None of the above

a). Heavily 2). Lightly 3). Moderately 4).

Ans- Moderately


6). The Emitter of the Transistor is . Doped
d). None of the above

a). Heavily 2). Lightly 3). Moderately

Ans- Heavily

7). A transistor is a .. operated device. a). Current b). Voltage c). Both Current and Voltage
d). Non of the above

Ans - Current

8). In a NPN transistor.are minority carriers

d). Donar ions

a). Free electrons b). Holes c). Acceptor Ions

Ans Holes

9). In a transistor, the base current is about . Of emitter current

d). 5%

a). 25% b). 20% c). 50%

Ans 5%

10). At the Base-emitter junction of a transistor is

c). Low resistance d). Non of the above

a). Reverse Biased b). A wide depletion layer

Ans- Low resistance

11). The input impedance of the transistor is ..

High b). Low c). Very high d). Almost Zero

Ans- Low
12). In a transistor,.

a) IE = Ic- IB b). Ic = IE + IB c). IB= Ic + IE d) IE = Ic+ IB

Ans - IE = Ic+ IB
13). The value of Alpha of a transistor is

a). > 1 b). < 1 c). = 1 d). none of the above

Ans - < 1
13). The value of of a transistor is

a). > 1 b). < 1 c). = 1 d). Between 20 and 500

Ans - Between 20 and 500

14). The output impedance of a transistor is
Ans - High

RB ( + 1),,,,, ( 1),,,,, ( + 1)....

15). The relation between

d).

a). High b). Low c). zero d). Very Low

and is

= 1/ + 1

a).
Ans-

= /1

c).

= 1/

a). CCC b). CEC c). CBC d). None of the

Ans - CEC

17). The voltage gain of a transistor connected in CCC is

c). More than 100 d). Less than 1

= 1/ 1

= /1

16). The most commonly used transistor Configuration is

above

b).

a). Equal to 1 b). More than 10

Ans - Less than 1


18). In a transistor, signal is transferred from a . Circuit
a). High resistance to Low resistance b). Low resistance to High resistance c). Low resistance to
Low resistance d).High resistance to High resistance.

Ans - Low resistance

to High resistance
19). The Arrow in the symbol of a transistor indicates the direction of
a). Electron current in the emitter b). Electron current in the Collector c). Hole current in the
emitter d). None of the above

Ans - Electron current in the emitter

20). The leakage current in CE configuration is . That in CB arrangement

than b). Less than c). The same as d). None of the above

a). More

Ans - More than

21). The most commonly used SC material for the manufacture of a transistor is
c). Cu d). None of the above

a). Ge b). Si

Ans - Si

22). The collector Base junction in a transistor has

c). Low resistance d). None of the above

a). F.W.B at all times b). R.V.B at all times

Ans - R.V.B at all times

1. A regular transistor is also known as:

Bipolar.

BJT.

NPN or PNP.

All the above is correct.

None of the above.

2. A bipolar transistor has always three terminals, called:

Emitter, Collector and Base.
Emitter, Base and Common.

Source, Gate and Drain.

Anode, Cathode and Gate.

None of the above.

3. If a NPN bipolar transistor is connected to a circuit using a common-emitter

configuration, what we can say about the relationship of its currents?
IE = IB + IC

IC = IB + IE

IB = IC + IE

= IC + IE

None of the above.

4. On a simple amplifier circuit using a NPN bipolar transistor in common-emitter

configuration, the voltage gain (AV) will be equal to:
The transistor alpha.

The transistor beta.

The transistor hFE.

Vout / Vin

None of the above.

5. Again on a simple amplifier circuit using a NPN bipolar transistor in common-emitter
configuration, the output signal will be:


Always gre
eater than th
he input signal.
180 out of
o phase co
ompared to the inputt signal.
Equal to th
he input sign
nal times the alpha of the transisto
or.
Equal to th
he input sign
nal times the beta of th
he transistorr.
None of the
e above.
6. A transisto
or can also be used as
s a switch,, working at
a its:
Saturation
n and cuto
off regions.
reverse bias.

Quiescen
nt point.

Avalan
nche breakdo
own region..

Forwarrd bias and

None of th
he above.

7. The
T
curren
nt gain of a transistorr is defined
d by a para
ameter called:
Beta or hF
FE.
con
nfiguration.

Alph
ha.
AV.

Beta
a on commo
on-emitter configuration
c
n or alpha on
o common--base

None of the
e above