Lecture 3

Semiconductor Physics (II) Carrier Transport

Outline
Thermal Motion Carrier Drift Carrier Diffusion

Reading Assignment: Howe and Sodini; Chapter 2, Sect. 2.4-2.6

6.012 Spring 2009

Lecture 3

1. Thermal Motion
In thermal equilibrium, carriers are not sitting still: Undergo collisions with vibrating Si atoms (Brownian motion) Electrostatically interact with each other and with ionized (charged) dopants

Characteristic time constant of thermal motion: mean free time between collisions

c collison time [s]

In between collisions, carriers acquire high velocity:

v th thermal velocity [cms ]

. but get nowhere!
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Characteristic length of thermal motion: mean free path [cm]

= v th c
Put numbers for Si at room temperature:

c 10

13 7

s
1

vth 10 cms

0.01 m
For reference, state-of-the-art production MOSFET: Lg 0.1 m Carriers undergo many collisions as they travel through devices
6.012 Spring 2009 Lecture 3 3

2. Carrier Drift
Apply electric field to semiconductor: E electric field [V cm-1] net force on carrier F = qE
E

Between collisions, carriers accelerate in the direction of the electrostatic field:

qE v( t) = a t = t mn ,p
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But there is (on the average) a collision every c and the velocity is randomized:
net velocity in direction of field

time

The average net velocity in direction of the field:

v = vd =

qE q c c = E 2mn ,p 2mn ,p

This is called drift velocity [cm s-1] Define:

q c 2 1 1 n, p = mobility [cm V s ] 2mn ,p

Then, for electrons:

v dn = n E
and for holes:

v dp = p E
Lecture 3 5

6.012 Spring 2009

Mobility - is a measure of ease

of carrier drift

If c , longer time between collisions If m , lighter particle At room temperature, mobility in Si depends on doping:
1400 1200
electrons 1000

mobility (cm2/Vs)

800 600 holes 400 200 0

1013

1014

1015 1016 1017 1018 Nd + Na total dopant concentration (cm3)

1019

1020

For low doping level, is limited by collisions with lattice. As Temp ->INCREASES; -> DECREASES For medium doping and high doping level, limited by collisions with ionized impurities Holes heavier than electrons
For same doping level, n > p
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Drift Current
Net velocity of charged particles electric current:

Drift current density

carrier drift velocity carrier concentration carrier charge

Drift current densities:

drift Jn = qnv dn = qn n E drift J p = qpv dp = qp p E

Check signs:
E vdn Jndrift x
-

E vdp
+

Jpdrift x

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Lecture 3

Total Drift Current Density :

J
drift

= Jn

drift

+ Jp

drift

= q n n + p p E

Has the form of Ohms Law

J =E =
Where:

conductivity [-1 cm-1] resistivity [ cm]

Then:

= q n n + p p

)
8

6.012 Spring 2009

Lecture 3

Resistivity is commonly used to specify the doping level

In n-type semiconductor:

1 n qN d n
1 p qN a p

In p-type semiconductor:

1E+4 1E+3

Resistivity (ohm.cm)

1E+2 1E+1 1E+0

p-Si n-Si

1E-1 1E-2 1E-3 1E-4 1E+12 1E+13 1E+14 1E+15 1E+16 1E+17 1E+18 1E+19 1E+20 1E+21 Doping (cm-3)

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Lecture 3

Numerical Example:
Si with Nd = 3 x 1016 cm-3 at room temperature

n 1000 cm 2 / V s

n 0.21 cm
n 3X 1016 cm 3
Apply E = 1 kV/cm

vdn 10 6 cm / s << vth E drift Jn qnvdn = qn n E = E =

drift Jn 4.8 10 3 A / cm2

Time to drift through L = 0.1 m

fast!
6.012 Spring 2009

L td = = 10 ps vdn
Lecture 3 10

3. Carrier Diffusion
Diffusion = particle movement (flux) in response to concentration gradient

x
Elements of diffusion: A medium (Si Crystal) A gradient of particles (electrons and holes) inside the medium Collisions between particles and medium send particles off in random directions Overall result is to erase gradient

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Ficks first lawKey diffusion relationship Diffusion flux - concentration gradient

Flux number of particles crossing a unit area per unit time [cm-2 s-1] For Electrons:
Fn = Dn dn dx

For Holes:
Fp = Dp

dp dx

2 s-1] Dn Dp hole diffusion coefficient [cm2 s-1]

D measures the ease of carrier diffusion in response to a concentration gradient: D Fdiff D limited by vibration of lattice atoms and ionized dopants.

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Diffusion Current
Diffusion current density =charge carrier flux

dx dp diff J p = qD p dx
Check signs:
n Fn Jndiff x p Fp Jpdiff x

dn diff Jn = qDn

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Einstein relation
At the core of drift and diffusion is same physics: collisions among particles and medium atoms there should be a relationship between D and Einstein relation [will not derive in 6.012]
D kT = q

In semiconductors:
Dn n = kT q = Dp p

kT/q thermal voltage At room temperature:

kT 25 mV q

For example: for Nd = 3 x 1016 cm-3

n 1000 cm2 / V s Dn 25 cm 2 / s p 400 cm 2 / V s D p 10 cm 2 / s

6.012 Spring 2009 Lecture 3 14

Total Current Density

In general, total current can flow by drift and diffusion separately. Total current density:

diff J n = J drift + J = qn n E + qD n n n

Jp = Jp

drift

+ Jp

diff

dn dx dp = qp pE qD p dx

J total = J n + J p

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What did we learn today?

Summary of Key Concepts
Electrons and holes in semiconductors are mobile and charged Carriers of electrical current! Drift current: produced by electric field

drift

E J

drift

d dx

Diffusion current: produced by concentration gradient

diffusion

dn dp , dx dx

Diffusion and drift currents are sizeable in modern devices Carriers move fast in response to fields and gradients

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6.012 Microelectronic Devices and Circuits

Spring 2009

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