MOSFET TRANSISTORS LAB 6

Lab Objective:
This lab focuses on the metal-oxide-semiconductor field effect transistor (MOSFET). There are two types of MOSFETs: enhancement and depletion. At zero gate voltage, no current is exhibited by the enhancement MOSFET while a channel current is exhibited by the depletion MOSFET. The experiments done in this lab will be dealing with the I-V characteristics of the enhancement n-channel MOSFET and its application as an analog amplifier. The type of MOSFET being used is from the CD4007 MOS array, an IC package containing 3 n-channel and 3 p-channel transistors.

Activity 1: Measurement of device parameter, vt and k Procedure:

-Assemble the circuit of Fig.3 and make connection to ground via D.V.M (digital volt meter). Remember that Pin 14 should be connected to most positive in the circuit, while Pin 7 connected to most negative in the circuit. -First measure Vt (almost) directly by measuring the voltage at pin 7 with D.V.M. -Then, shunting the D.V.M. by 1k-ohm resistor, find the device voltages, current, and then K.

Results:
BEFORE SHUNTING: VDD = 10V VT = 8.98V ID = 4.83 mA K = ID/(VGS-VT)^2 = 4.6 AFTER SHUNTING WITH 1K-OHMS: VDD=10V VT=4.85 ID = 4.94 mA K = ID/(VGS-VT)^2 = 0.2

Conclusion and Analysis:

This experiment was extremely simple. We merely had to measure the output before and after shunting. We learned from this how a mosfet acts realistically and how shunting a D.V.M. can indeed alter the output. This makes sense and all our values are within acceptable range which provides evidence that our experiment was indeed a success. The only real value we had to calculate was the k parameter.

Activity 2: Drain current as a voltage of gate-source voltage Procedure:

-Construct the circuit of Fig.4. Use the enhancement n-channel MOSFET (pin#6,7, and 8) and VDS=+5 volts. -Vary VGS with the interval of 0.3 V until ID = 0. -Record the values of ID in Table 1. -From the plot, find the following values and show all calculations. (threshold voltage and conductivity parameter)

Results:

VGS (V) 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9

ID (mA) 1.205 0.844 0.561 0.323 0.151 0.047 0.006 0.001

K 0.218198 0.200833 0.183184 0.153627 0.114178 0.065052 0.019835 0.016

Drain Current vs. Gate-Source Voltage

1.5 ID (milli-Amps) 1 0.5 0 0 1 2 VGS (Volts) 3 4

0.65 (Vt)

Conclusion and Analysis: We find out that Vt = 0.65. From there we calculate the conductivity parameter K with the following formula: K=ID/(VGS-Vt )^2 Theoretically, the conductivity parameter should be a constant value, but we find out in this experiment that it varies between 0.016 and 0.218. This is probably due to certain factors that could have impacted the results, human error for example. Activity 3: Graphical Analysis of operating point Procedure:
-Set up the circuit of Fig.5 -Measure the drain voltage and calculate current with the variation of VDD. Fill out the table 2. -Draw the current ID vs. VDS on the rectangular graph paper. -Find the operating point for VDD = 15V by using load line. -You may refer to page 334 of the textbook.

Results:
VDD (V) 0.02 4.57 7.87 11.84 13.32 14.43 15.49 16.52 17.56 18.58 19.6 VDS (V) 0 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 ID (mA) 0.009 1.850 3.122 4.473 4.691 4.741 4.768 4.782 4.800 4.809 4.818

Drain Current vs. Drain Voltage

8 ID (milli-Amps) 6 4 2 0 0 5 VDS (Volts) 10 Drain Current Line Load

Vds = 5V, Id = 4.768 mA Conclusion and Analysis:

From this experiment, we have figured out two very important concepts. One is that by changing VDD, we can change the values of VDS and ID. And eventually by graphing out the plot, we can also figure out the operating point for any value. According to our graph and our table of results, it is clear that we had little to no experimental error. There will be a little bit of error due to this not being a simulation but it is well within acceptable range. The experiment was a success and we learned exactly how we can control various outputs by tweaking inputs. We also learned how these outputs behave by tweaking the input.

Activity 4: Analog Amplifiers Procedure:

-Construct the circuit of Fig.6 (no RL and no Vi). -Measure VDS,VGS, and ID without the connection of AC source and compare the values with the data of activity 3 (operating point). Measure the DC values before the capacitors. What can you find from the comparison?

-Apply a f = 1 kHz sinusoidal signal (VPP = 1V) at gate (with no RL). Observe vi and vo from the oscilloscope. Measure output voltage and calculate the voltage gain. Compare with the theoretical value. -Connect load resistor, RL = 1k-ohm. Observe both signals from the oscilloscope. Measure the output voltage. Compare the experimental gain with the theoretical one. -Increase the amplitude of AC signal to see the distortion of the output signal. What is your maximum value of AC input before the distortion and the output voltage at that time? vi,max = ________________ volt (p-p) vo,max = ____________________ volt (p-p)

-Sketch the low frequency small-signal equivalent circuit of Fig.6.

Results, Conclusion, and Analysis:

Without the connection of the AC source, we take measurements:

These values are basically the exact same as activity 3. Vi = 1.10, Vo = 3.982, Gain = 4. In the second part, we are asked to measure by applying a frequency to the system and connect Vpp. As a result, our gain is 4 and thus our output quadruples compared to the input. Now we are asked to attach the load and as the load greatly reduces the output, by half exactly, our results follow perfectly as the following: Vi = 1.10,Vo=1.9, Gain = 2. The last part asks us to figure out the Vi max and Vo max. What we found are the following: Vi Max = 7.4, Vo Max = 6.7 Overall the experiment was a success and our values are within acceptable range.