C791 100mm THYRIST OR PRESSP AK THYRISTOR PRESSPA 5000V / 3600A

Type C791 thyristor is suitable for phase control applications such as for HVDC valves,static VAR compensators and synchronous motor drives.The silicon junction design utilizes a second generation pilot gate and a unique orientation of emitter shorts which promote the lateral expansion of conducting plasma resulting in lower spreading losses while achieving high dv/dt withstand.It is supplied in an industry accepted disc-type package,ready to mount using commercially available heat dissipators and mechanical clamping hardware .

On-State Characteristic
On-State Current, It (A) 60000

10000 Process Maximum pulsed currents Tcase = 125 C

REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE TJ= 0 t o1 2 5oC MODEL VD R M VR R M ( v o l t s ) ( v o l t s ) C791EP 5000 5000 C791DT 4900 4900 C791DN 4800 4800 C791DS 4700 4700 C791DM 4600 4600 C791DE 4500 4500 MECHANICAL OUTLINE
J

1000 0 1 2 3 4 5 6 7 8 9 10 11 12 On-State Voltage, Vt (volts)

01a:C791

C L

C L

Thermal Impedance
.01 Zthj-case (degC/watt)
A B

2 0 5

.001 Rthj-c=.005 degC/W add .002 for case to sink

A F = 5.65 in (143.5 mm) B F =3.92 in (99.4 mm) D=1.45in (36.8 mm)

.0001 0.001
o1a:t305tau

0.01

0.1 1 Power On-time (seconds)

10

ELECTRICAL CREEPAGE / STRIKE 1 . 6/1 . 0i n 40.6 / 25.4 mm CLAMPING FORCE ( r a n g e ) 17000-19000 lb.

175 GREAT VALLEY PKWY. MALVERN, PA 19355 USA Rev. 4 10/29/01

C791 / 6RT302
LIMITING CHARACTERISTICS AND RATINGS
Repetitive peak offstate & reverse volts @ 5Hz Repetitive working crest voltage, 60Hz Off-state & reverse leakage current, 60Hz Average on-state current Peak half-cycle non-rep surge current On-state voltage VD R M VR R M T J=0 t o1 2 5oC u pt o 5000 V

Non-Repetitive Surge Current and I2t for Fusing Itsm (kA)

100000

VD W M VD R M I D W M I R W M I T(AV)

T J=0 t o1 2 5oC T J=0 t o1 2 5oC T case= 70oC 60 Hz 50 Hz I =4000A T =8.3ms t P T J=125oC T J=125oC 60 Hz T J=125oC V D =.67VD R M T J=125oC 2 A / u s 5 A / u s Vd=.5VD R M 5A/us,-100V 20V/us to 2000V

0.8VD R M 0.8VR R M 200 200 3600 ma

I2t Mamp2sec
10

I2t Itsm
A

I TSM

4 4 . 5 4 1 . 5 2 . 0 0

kA

VT M

C r i t i c a lr a t eo fr i s e of on-state current C r i t i c a lr a t eo fr i s e fo f f s t a t ev o l t a g e o Recovery current

d i / d t r e p d v / d t

100

A/us

1000

V/us

I R M

A 90 195
10000

Turn-on delay Turn-off time

t d T off

4 500

u s u s
01l:C791ITSM

1 Half Sine Pulse Duration, tp (ms)

1 10

Thermal resistance Externally applied clamping force

R thJC F

. 0 0 5 17000 -19000

c/w l s . b

Gate Characteristics and Gate Supply Requirements

Instantaneous Voltage (V) 50 dynamic @ 105 C 40

THYRISTOR GATE IMPEDANCE Enhanced by fast rising gate voltage,increasing anode bias and junction temperature.It is at a minimum for dc current, zero anode bias and low temperature. GATE SUPPLY Prefer 50V/10 ohm for supporting the di/dt rating and life expectancy. The short circuit current risetime should be nominally 0.5us and the duration longer than the expected delay time for all magnitudes of anode bias. Practically 10-30us is recommended followed by a back porch of 750ma if needed to sustain conduction. MINIMUM ACCEPTABLE GATE CURRENT The intersection of the load line and gate impedance characteristic indicates the minimum value of actual current needed during the delay time interval to support di/dt.A different load line meeting this criterion may be used. MAXIMUM GATE RATINGS Peak gate power,Pgm(100us) = 300 W Average gate power,Pg(av) = 50W Peak gate current,Igfm = 25 A Peak reverse voltage,Vgrm = 25 V

30

load line

20

10 static (dc) @ 25 C

0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Instantaneous Current (A)

T302

Sh2 Rev. 4

10/29/01

C791 / 6RT302
FULL CYCLE AVERAGE POWER DISSIPATION
120-deg Conduction -includes spread loss as function of Overlap Angle , U

PEAK RECOVERY CURRENT versus COMMUTATING di/dt

Peak recovery Current (A) 200
di

Average Power , Pavg (watts) 3000 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0 500 1000 1500 2000 2500 3000 3500 4000
U = 2 deg U = 20 U = 40
120 degrees

dt

100

U
120 deg + U

U
di I dt
RM(REC) (REC)

Tj = 125degC

Process Maximum

10 0.1

Peak Current ,It (amperes)

5000V 100mm 6RT302

di/dt (A/us)

FULL CYCLE AVERAGE POWER DISSIPATION

Sine Wave - includes spread loss as function of conduction angle

INRUSH CURRENT (di/dt) RATING versus SWITCHING VOLTAGE

Switching Voltage,Vd (volts)

Avg. Power, Pavg (W) 2500

conduction angle (degrees)

180

5000

single shot
2000
150

4000

conduction angle

120

50/60 Hz
3000

1500
90

1000
60

2000

30

500

1000 Snubber resistor = 30 ohms snubber inductance = 12 uH

0 0 500 1000 1500 2000 2500 3000 3500 4000

0 0 100 200 300 400

Peak Current, It (amperes)

6RT302 T302

di/dt in A/us

sh 3.

Rev. 4. 10/29/01