EE-215 ELECTRONIC DEVICES AND CIRCUITS

ABASYN UNIVERSITY

Lab # 10 Forward V-I characteristic of LED

Using KVL to calculate value of resistance R

S.NO

Vf (volts)

If (mA)

Marks: ___________ Signature: ______________

EE-215 ELECTRONIC DEVICES AND CIRCUITS

ABASYN UNIVERSITY

Lab # 11
Experimental Problem: In todays lab you are required to demonstrate:1). 2). 3). Transistor (BJT) Operation Measurement of Transistors Currents and Verification of IE = IC + IB Calculation of DC and DC

Required components: Use 2222A or other General Purpose BJT. Variable DC power Supply Multimeter Resistors

Objectives of the Exercise: Introduction to Transistors with emphasis on BJTs. Introduction to different characteristic parameters related to BJT and their Measurement/ Calculation. Analysis of Transistor circuit with the help of these parameters.

Background: The transistor was invented by a team of 3 men in 1947 at Bell Laboratories.This invention brought a revolution in every field of the technology. Two basic types of transistors are BIPOLAR JUNCTION TRANSISTOR and FIELD-EFFECT TRANSISTORS (FET). In todays lab we shall consider the basic operation of the BJT. Generally, devices in which currents are established due to the motion of both the N-type and P-type carriers are referred to as the bipolar devices. Consequently, the transistors in which the current flow is due to Both the Holes and electrons are termed as the BJTs. BJTs are also known as current controlled devices.

EE-215 ELECTRONIC DEVICES AND CIRCUITS

ABASYN UNIVERSITY

Basic BJT Biasing Circuit: RC

RC

RB VBB

Q1 PNP

RB + VCC +V BB

Q1 NPN

+ V CC

Experimental Activity: A. Implement the following Circuit and then determine the values for the IC, IB, IE, VBE, VCE, VCB, DC, and DC.

RC 100 RB VBB 5V + 10K Q1 NPN + VCC 10V

EE-215 ELECTRONIC DEVICES AND CIRCUITS

ABASYN UNIVERSITY

Fill the Table for the experimental values. IB IC IE VCE VBE VBC DC

DC

Marks: ___________ Signature: ______________ Comments:

EE-215 ELECTRONIC DEVICES AND CIRCUITS

ABASYN UNIVERSITY

LAB # 12
Experimental Constraints: 1). 2). Use 2222A or other General Purpose BJT. Variable Dc power Supply Multimeter Resistors Generation of set of collector characteristic curves DC Load Line on the Collector characteristic curves, Cutoff and Saturation Points on the Curves. Generation of the Collector Characteristics Curve. Using the circuit shown below one can generate a set of collector characteristic curves that show how the collector current IC, varies with the collector-to-emitter voltage VCE, for specified values of base current, IB. RC 100 RB VBB 5V First Set VCC and VBB equal to zero. Measure IC, IB and IE. Justify the Readings that you get. What should be the ideal case readings under this situation? + 10K Q1 NPN + VCC 10V

Increase the VBB and obtain a reasonable value of IB , at this value fix the VBB. Sweep the VCC and record the values of IC and VCE at reasonable points along the sweep. The step shall generate a curve. This is the first curve among the set of curves which we shall generate. Repeat the above step for higher values of VBB and correspondingly a higher value of IB. Record the reading to generate a total of 7 curves. Draw DC Load Line and identify the Cutoff and Saturation on the set of curves.

EE-215 ELECTRONIC DEVICES AND CIRCUITS

ABASYN UNIVERSITY

Sr. No. 2

IB

Fill in the table according to your Readings. Draw the Plots for IC vs. VCE on the same Graph. VCE IC

VCE

IC

VCE

IC

VCE

IC

VCE

IC

EE-215 ELECTRONIC DEVICES AND CIRCUITS 7 VCE IC

ABASYN UNIVERSITY

Marks: ___________ Signature: ______________ Comments: