A

&MOSPEC
HIGH-POWER NPN SILICON POWER TRANSISTORS

NPN

designed for use in general-purpose amplifier and switching application.

...

2SD718

FEATURES:
*

Recommend for 45 - 50W Audio Frequency Amplifier

Output stage. Complementary to 2SB688
8 AMPERE POWER
TRANASISTOR

120 VOLTS 80 WATTS

MAXIMUM RATINGS Characteristic

Symbol

2SD718 120
120

Unit
V

Collector-Emitter Voltage

Vceo VCBO
Vebo
'
c

Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
-

V V

50
.

TO-247(3P)
80
.

Peak

"CM

16 08
.

Base current

A
W
G

Total Power Dissipation @TC = 250C

Derate above 250C

80 0 64
.

Operating and Storage Junction Temperature Range

Tj TsTG
-

H- -

Un

55to+150

THERMAL CHARACTERISTICS
PIN 1.BASE

Characteristic

Symbol
Rejc

Max 1 56
.

Unit

2 COLLECTOR
.

S EMfTTER
.

Thermal Resistance Junction to Case

0C/W
MILLIMETERS

DIM
MIN

MAX

FIGURE -1 POWER DERATING

100

A
B

20.63 15.38
1 90
.

22.38 16.20 2 70
.

| 80

D E
F

5 10
.

6 10
.

14.81 11.72
4 20
.

15.22

1 60
a
o:

12.84
4 50
.

G H I J K L M N

1 82
.

2 46
.

40

2 92
.

3 23
.

0 89
.

1 53
.

| 20
o

5 26
.

0
C)

18.50 4 68
.

5 66 21.50 5 36
.
.

2 40
.

2 80
.

25

50 75 100 Tc , TEMPERATURE(C)

125

150

O
P

3 25
.

3 65
.

0 55
.

0 70
.

357~

2SD718 NPN

ELECTRICAL CHARACTERISTICS (Tc = 250C unless otherwise noted )

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO
'

(lc= 50 mA, lB= 0 )

Collector Cutoff Current
CBO

120 uA 10

(VCB=120V, lE=0)
Emitter Cutoff Current

>EBO
10

uA

(VEB= 5.0 V, lc=0)

ON CHARACTERISTICS (1)
DC Current Gain

(lc=1.0AIVCE= 5.0 V)*

Collector-Emitter Saturation Voltage

hFE(2)

55

160
V 25
.

VCE(sat)

(lc= 5.0 A, lB= 0.5 A)

Base-Emitter On Voltage

VBE(on)

V 15
.

(lc= 5.0A,VCE=5.0V)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product '
t

MHz

( lc = 1.0 A, VCE = 5.0 V, f = 1.0 MHz )

Output capacitance

12(typ)

PF 170(typ)
2 0%
.

(VCB = 10V,IE = 0, f = 1.0MHz)

(1) Pulse Test: Pulse Width =300 us.Duty Cycle hFE(2) Classification :
*

55

110

80

160

358~

2SD718 NPN

le - Vce

DC CURRENT GAIN

1
Te-1
400 300 ?oc

soo 500

Mil
Ve
V

3UU

/
10C)

200

Tc=10ir
1

f f
2 3 4 5 6 7 8 9

ui

o:
o:

100

2!fC
-2C-

01

50

>mA

20

Ib=0
1

10

10

11

12

13

14

0 01
.

0.02

0 05
.

0.1

0.2

0.5

1.0

2.0

50
.

10

Vcc . COLLECTOR-EMITTER VOLTAGE (V)

le , COLLECTOR CURRENT (AMP)

le - Vbe
10
.

CEsat-'C

COMMON EMITTER

Ic/Ib-10

Ul

<2

02
.

UJ

01
.

Tc-100 5

0.05
-

efe

2 C
2 0

0 02
.

08
.

16
.

18
.

0 01 0 01
. .

0.02

0 05
.

0.1

10
.

10

Vbe , BASE - EMITTER VOLTAGE (V)

IC , COLLECTOR CURRENT (mA)

ACTIVE-REGION SAFE OPERATING AREA (SOA)

30 20

I I 11
1 ms

There are two limitation on the power handling ability

10 E

Si:

lOms

JOOms = SOOms:
.

of a transistoraverage junction temperature and second breakdown safe operating rea curves indcate Ic-Vce
limits of the transistor that must be observed for reliable

i
z

50
.

20
.

< O
ni
_ _

10
.

) i

05
.

ZZ
.-

BondngWireUmit
-

operation i.e., the transistor must not be subjected to greater dissipation than curves indcate. The data of SOA curve is base on Tj k I 50 C; Te is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided

Second Breakdovwi Unit-

Tjipk ISCPC, At high case temperatures, thermal limitation will reduce the power that can be handied to vales less than the limitations imposed by second breakdown.
20 50 70 100
300

ThermalIyUmited

02
.

atTc
j
10
.

CfSngePse i 111 m
5.0 7.0 10

01
.

20
.

Vce . COLLECTOR EMnTER VOLTAGE (VOLTS)

359~