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Ordering number : ENN7767

2SK3747

Ordering number : ENN7767 2SK3747 2SK3747 Features N-Channel Silicon MOSFET High-Voltage, High-Speed Switching

2SK3747

Features

N-Channel Silicon MOSFET

High-Voltage, High-Speed Switching Applications

Low ON-resistance, low input capacitance, ultrahigh-speed switching.

High reliability (Adoption of HVP process).

Attachment workability is good by Mica-less package.

Avalanche resistance guarantee.

Specifications

Absolute Maximum Ratings at Ta=25C

Parameter

Symbol

Conditions

 

Ratings

 

Unit

Drain-to-Source Voltage

V

DSS

   

1500

 

V

Gate-to-Source Voltage

V

GSS

   

±20

 

V

Drain Current (DC)

 

I

D

   

2

 

A

Drain Current (Pulse)

 

I

DP

PW 10 s, duty cycle 1%

 

4

 

A

Allowable Power Dissipation

 

P

     

3.0

 

W

D

Tc=25C

 

50

 

W

Channel Temperature

 

Tch

   

150

 

C

Storage Temperature

 

Tstg

   

--55 to +150

 

C

Avalanche Energy (Single Pulse) *1

 

E

AS

   

42

 

mJ

Avalanche Current *2

 

I

AV

   

2

 

A

*1 V DD =99V, L=20mH, I AV =2A *2 L 20mH, single pulse

Electrical Characteristics at Ta=25C

 

Parameter

Symbol

Conditions

 

Ratings

 

Unit

min

typ

max

 

Drain-to-Source Breakdown Voltage

V

(BR)DSS

I D =1mA, V GS =0

1500

     

V

Zero-Gate Voltage Drain Current

 

I

DSS

V DS =1200V, V GS =0

   

100

 

A

Gate-to-Source Leakage Current

 

I

GSS

V GS = ±16V, V DS =0

   

±10

 

A

Cutoff Voltage

V

GS (off)

V DS =10V, I D =1mA

 

2.5

 

3.5

 

V

Forward Transfer Admittance

 

yfs

V DS =20V, I D =1A

 

0.7

1.4

   

S

Static Drain-to-Source On-State Resistance

R

DS (on)

I D =1A, V GS =10V

 

10

13

 

Marking : K3747

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.SANYO assumes no responsibility for equipment failures that result from using products at values that

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.your SANYO representative nearest you before using any SANYO products described or contained herein in such

SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO,
SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO,

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

81004QB TS IM TB-00000018 No.7767-1/4

2SK3747

Continued from preceding page.

Ratings Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss V DS =20V, f=1MHz
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
Input Capacitance
Ciss
V DS =20V, f=1MHz
400
pF
Output Capacitance
Coss
V DS =20V, f=1MHz
85
pF
Reverse Transfer Capacitance
Crss
V DS =20V, f=1MHz
45
pF
Turn-ON Delay Time
t
(on)
See specified Test Circuit.
12.5
ns
d
Rise Time
t
See specified Test Circuit.
30
ns
r
Turn-OFF Delay Time
t
d
(off)
See specified Test Circuit.
152
ns
Fall Time
t
See specified Test Circuit.
45
ns
f
Total Gate Charge
Qg
V DS =200V, V GS =10V, I D =2A
37.5
nC
Gate-to-Source Charge
Qgs
V DS =200V, V GS =10V, I D =2A
2.7
nC
Gate-to-Drain “Miller” Charge
Qgd
V DS =200V, V GS =10V, I D =2A
20
nC
Diode Forward Voltage
V
I S =2A, V GS =0
0.88
1.2
V
SD
Note) Although the protection diode is contained between gate and source, be careful of handling enough.
Package Dimensions
unit : mm
2076B
16.0
5.6
3.4
3.1
2.8
2.0
2.0
1.0
0.6
1 : Gate
1
2
3
2 : Drain
3 : Source
5.45
5.45
SANYO : TO-3PML
21.0
4.0
3.5
5.0
8.0
22.020.4
2.0
SANYO : TO-3PML 21.0 4.0 3.5 5.0 8.0 22.020.4 2.0 Switching Time Test Circuit V DD

Switching Time Test Circuit

V DD =200V V IN 10V 0V I D =1A V IN R L =200
V DD =200V
V IN
10V
0V
I
D =1A
V IN
R
L =200
D
V OUT
PW=10 s
D.C. 0.5%
G
2SK3747
P.G
S
R GS =50
Unclamped Inductive Test Circuit L ≥50 DUT 10V 50 0V
Unclamped Inductive Test Circuit
L
≥50
DUT
10V
50
0V

V DD

2SK3747

I D -- V DS 4.0 Tc=25∞C pulse 3.5 3.0 2.5 6V 2.0 1.5 1.0
I D
--
V DS
4.0
Tc=25∞C
pulse
3.5
3.0
2.5
6V
2.0
1.5
1.0
5V
0.5
V
GS =4V
0
0
5 10
15
20
25
30
35
40
45
50
8V
10V
Drain Current, I D -- A

Drain-to-Source Voltage, V DS -- V

IT07130

R DS (on) -- V GS 30 I D =1A 25 20 Tc=75∞C 15 25∞C
R DS (on) -- V GS
30
I
D =1A
25
20
Tc=75∞C
15
25∞C
10
--25∞C
5
0
0
2 4
6
8
10
12
14
16
18
20
Static Drain-to-Source
On-State Resistance, R DS (on) --
I D -- V GS 3.0 V DS =20V pulse 2.5 Tc= --25∞C 2.0 25∞C
I D
--
V GS
3.0
V
DS =20V
pulse
2.5
Tc= --25∞C
2.0
25∞C
1.5
75∞C
1.0
0.5
0
Drain Current, I D -- A
0 2 4 6 8 10 12 14 16 18 20 Gate-to-Source Voltage, V --
0
2 4
6
8
10
12
14
16
18
20
Gate-to-Source Voltage, V
--
V
GS
IT07131
R DS (on) -- Tc
30
I
1A
D =
V
GS =10V
25
20
15
10
5
0
--50
--25
0
25
50
75
100
125
150
Static Drain-to-Source
On-State Resistance, R DS (on) --
Gate-to-Source Voltage, V GS -- V IT07132 Case Temperature, Tc -- ∞C IT07133 y fs
Gate-to-Source Voltage, V GS -- V
IT07132
Case Temperature, Tc -- ∞C
IT07133
y fs
--
I D
I F
--
V SD
5
10
V
DS =20V
V
7
GS =0
5
3
3
2
2
1.0
7
1.0
5
7
3
2
5
0.1
3
7
5
2
3
2
0.1
0.01
3
57
3
57
3
0.2
0.4
0.6
0.8
1.0
1.2
0.1 2
1.0 2
Drain Current, I D -- A
IT07134
Diode Forward Voltage, V SD -- V
IT07135
Tc= --25∞C
25∞C
75∞C
Forward Transfer Admittance, y fs
--
S
Tc=75∞C
Forward Drain Current, I F -- A
25∞C
--25∞C
SW Time -- I D 5 V DD =200V t d (off) t V GS
SW Time
--
I D
5
V
DD =200V
t
d (off)
t
V
GS =10V
f
3
2
100
7
5
3
2
t
d (on)
10
2
3
57
2
3
0.1
1.0
Drain Current, I D -- A
IT07136
t
r
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- V DS 5 f=1MHz Crss 3 2 Coss 1000 7 5
Ciss, Coss, Crss -- V DS
5
f=1MHz
Crss
3
2
Coss
1000
7
5
Ciss
3
2
100
7
5
3
2
10
0
5 10
15
20
25
30
35
40
45
50
Ciss, Coss, Crss -- pF

Drain-to-Source Voltage, V DS -- V

IT07137

2SK3747

V GS -- Qg 10 V DS =200V 9 I D =2A 8 7 6
V GS --
Qg
10
V
DS =200V
9
I
D =2A
8
7
6
5
4
3
2
1
0
Gate-to-Source Voltage, V GS -- V
0 10 20 30 40 Total Gate Charge, Qg -- nC IT07138 -- Ta P
0
10
20
30
40
Total Gate Charge, Qg -- nC
IT07138
--
Ta
P D
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 20
40
60 80
100
120
140
160
Allowable Power Dissipation, P D -- W

Ambient Temperature, Ta -- C

IT07140

A S O

10 s 100 s 1ms 10ms 100ms DC operation 7 I =4A 5 DP <10
10 s
100 s
1ms
10ms
100ms
DC operation
7
I
=4A
5
DP
<10
s
3
I
=2A
D
2
1.0
7
5
3
2
Operation in this area
0.1
7
is limited
by R DS (on).
5
3
2
Tc=25∞C
Single pulse
0.01
Drain Current, I D -- A
57 3 57 2 3 57 2 3 1.0 23 10 2 100 1000 Drain-to-Source
57
3
57
2
3
57
2
3
1.0 23
10 2
100
1000
Drain-to-Source Voltage, V
--
V
DS
IT07139
P D
--
Tc
60
50
40
30
20
10
0
0
20
40
60 80
100
120
140
160
Allowable Power Dissipation, P D -- W

Case Temperature, Tc -- C

IT07141

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.devices mounted in the customer’s products or equipment. In the event that any or all SANYO

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.for safe design, redundant design, and structural design. No part of this publication may be reproduced

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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.the prior written permission of SANYO Electric Co., Ltd. Information (including circuit diagrams and circuit

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend

This catalog provides information as of August, 2004. Specifications and information herein are subject to change without notice.