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AO4604 Complementary Enhancement Mode Field Effect Transistor

General Description
The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications. AO4604 and AO4604L are electrically identical. -RoHS Compliant -AO4604L is Halogen Free SOIC-8
S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1

Features
n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28m (VGS=10V) < 42m (VGS=4.5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52m (VGS = -10V) < 87m (VGS = -4.5V) 100% Rg Tested!

D2

D1

G2 S2

G1 S1

SOIC-8
Top View Bottom View

n-channel

p-channel

Absolute Maximum Ratings T A=25C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 30 DS VGS Gate-Source Voltage 20 Continuous Drain Current A Pulsed Drain Current Power Dissipation
B

Max p-channel -30 20 -5 -4.2 -20 2 1.44 -55 to 150

Units V V A

TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG

6.9 5.8 30 2 1.44 -55 to 150

W C

Junction and Storage Temperature Range

Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead t 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-LeadC

Symbol RJA RJL RJA RJL

Device n-ch n-ch n-ch p-ch p-ch p-ch

Typ 48 74 35 48 74 35

Max 62.5 110 40

Units C/W C/W C/W

62.5 C/W 110 C/W 40 C/W

Alpha & Omega Semiconductor, Ltd.

AO4604

N-CHANNEL: Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=5.0A Forward Transconductance Diode Forward Voltage VDS=5V, ID=6.9A IS=1A 10 Conditions ID=250 A, VGS=0V VDS=24V, V GS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250 A VGS=4.5V, VDS=5V VGS=10V, ID=6.9A TJ=125C 1 20 22.5 31.3 34.5 15.4 0.76 1 3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 1.2 13.84 VGS=10V, V DS=15V, ID=6.9A 6.74 1.82 3.2 4.6 VGS=10V, V DS=15V, R L=2.2, RGEN=3 IF=6.9A, dI/dt=100A/ s IF=6.9A, dI/dt=100A/ s
2

Min 30

Typ

Max

Units V

0.004

1 5 100

A nA V A

1.9

3 28 38 42

m m S V A pF pF pF

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

820

2 17 8.1

nC nC nC nC ns ns ns ns

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

4.1 20.6 5.2 16.5 7.8 20

ns nC

A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4: Jan 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AO4604

N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

20
10V

25 20 ID (A)

6V 5V 4.5V

16
4V

VDS=5V

12
15

3.5V
10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics

ID(A) 8

125C
VGS=3V

25C
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics

60

1.6 Normalized On-Resistance 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8
0 5 10 15 20

50 RDS(ON) (m )

ID=5A

VGS=10V

40

VGS=4.5V

VGS=4.5V

30

20

VGS=10V

10 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage

50

100

150

200

Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature

70 60 50

1.0E+01

ID=5A
IS Amps

1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04

RDS(ON) (m )

125C
40 30

125C

25C

25C
20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics

Alpha & Omega Semiconductor, Ltd.

AO4604

N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics

1000

VDS=15V ID=6.9A
Capacitance (pF)

900 800 700 600 500 400 300 200 100 0 0

f=1MHz VGS=0V

Ciss

Coss Crss
5 10 15 20 25 30

VDS (Volts) Figure 8: Capacitance Characteristics

100

RDS(ON) limited
ID (Amps) 10

TJ(Max)=150C TA=25C
1ms 10ms 0.1s
100 s

40

TJ(Max)=150C TA=25C
30 Power W

10s

20

1s 10s DC

10

0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100

0 0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 Z JA Normalized Transient Thermal Resistance

D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=62.5C/W


1

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton
Single Pulse

T
100 1000

0.01 0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4604

Gate Charge Test Circuit & W aveform


Vgs
Qg

+
VDC

10V
VDC

DUT
Vgs

+ Vds -

Qgs

Qgd

Ig
Charge

R e s is tiv e S w itch in g T e s t C irc u it & W a v e fo rm s


RL

Vds
Vds

Vgs
Rg

DUT

+
VDC

90%

V dd
10% Vgs

t d (o n ) ton tr t d (o ff) t o ff tf

V gs

D io d e R e c o v e ry T e st C irc u it & W a ve fo rm s
Vds +
DUT

Q rr = Vgs

Id t

Vds -

Isd
Vgs

Isd

IF

t rr

d I/d t

+
VD C

Vdd
Vds

I RM Vdd

Ig

Alpha & Omega Semiconductor, Ltd.

AO4604

P-CHANNEL: Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-4A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-5A IS=-1A,VGS=0V 6 TJ=125C -1 -20 39 54 67 8.6 -0.77 -1 -2.8 700 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 75 10 14.7 VGS=-10V, VDS=-15V, ID=-5A 7.6 2 3.8 8.3 VGS=-10V, VDS=-15V, RL=3, RGEN=3 IF=-5A, dI/dt=100A/s
2

Min -30

Typ

Max

Units V

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

-1 -5 100 -1.8 -3 52 70 87

A nA V A m m S V A pF pF pF

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

900

15 19 10

nC nC nC nC ns ns ns ns

SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s

5 29 14 23.5 13.4 30

ns nC

A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4: Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AO4604

P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


20

10
-10V

-6V

-5V
-4.5V

8
-4V

VDS=-5V

15

-ID (A)

10

-3.5V
5

-ID(A)

125C

VGS=-3V

25C

-2.5V
0 0.00

0
1.00 2.00 3.00 4.00 5.00

-VDS (Volts) Figure 1: On-Region Characteristics

-VGS(Volts) Figure 2: Transfer Characteristics

100

1.60E+00

VGS=-4.5V
80 RDS(ON) (m )

Normalized On-Resistance

VGS=-4.5V
60

1.40E+00

VGS=-10V

1.20E+00

VGS=-10V
40

1.00E+00

ID=-5A

20 1 3 5 7 9

8.00E-01 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature

-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage

160 140 120 RDS(ON) (m )


-IS (A)

1E+01

ID=-5A

1E+00 1E-01 1E-02 1E-03 1E-04

125C

100 80 60 40 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

125C

25C

25C

1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4604

P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


10

1200

VDS=-15V ID=-5A
8

1000

Ciss
Capacitance (pF) 800 600 400

-VGS (Volts)

Coss
200 0

0 0 2 4 6 8 10 12 14 16 -Qg (nC) Figure 7: Gate-Charge Characteristics

Crss
0 5 10 15 20 25 30

-VDS (Volts) Figure 8: Capacitance Characteristics

100

TJ(Max)=150C TA=25C
RDS(ON) limited

40

10s
100 s
30 Power (W)

TJ(Max)=150C TA=25C

-ID (Amps)

10

1ms 0.1s
1

20

10ms

1s 10s DC
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100

10

0 0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 Z JA Normalized Transient Thermal Resistance

D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=62.5C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton
Single Pulse

0.01 0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4604

Gate Charge Test Circuit & Waveform


Vgs

Qg

-10V
VDC

VDC

DUT
Vgs

Ig

R e sistive S w itch in g T e st C ircuit & W a ve fo rm s


RL

V ds
V gs
td(on )

V gs
Rg

DUT

V DC

V gs
V ds

D iod e R ecove ry T est C ircu it & W ave form s


V ds +
Q rr = Idt

DUT

V ds -

Isd

V gs Ig

VD C

+ Vdd -V ds

Alpha & Omega Semiconductor, Ltd.

+
Charge
t on tr t d(o ff) t o ff tf

Vds

Qgs

Qgd

V dd

90%

10%

V gs
t rr

-Isd

-I F

d I/d t
-I R M

Vdd