DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA2790GR
SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION
The PA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application.
8

PACKAGE DRAWING (Unit: mm)

5

N-channel 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 P-channel 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 0.3

FEATURES
Low on-state resistance N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A)
1.8 Max.

RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 80 m MAX. (VGS = 4.5 V, ID = 3 A) Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP.

4
+0.05 0.10

5.37 Max.

4.0

1.0

0.20

0.10 Min.

0.6 1.27 +0.11 0.12 M 0.40 0.05

0.5 0.2

0.10

Built-in gate protection diode Small and surface mount package (Power SOP8)

EQUIVALENT CIRCUITS
N-channel
Drain

P-channel
Drain

ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
Gate Protection Diode Source Gate

Body Diode

Gate

Body Diode

PA2790GR

Gate Protection Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16954EJ3V0DS00 (3rd edition) Date Published September 2006 NS CP(K) Printed in Japan

2004

The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

 PA2790GR
ABSOLUTE MAXIMUM RATINGS (TA = 25C. All terminals are connected.)
PARAMETER Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2

SYMBOL VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg

N-CHANNEL 30 20 6 24 1.7 2.0 150 55 to +150 6 3.6

P-CHANNEL 30

UNIT V V A A W W C C

m20 m6 m24

Total Power Dissipation (1 unit)

Total Power Dissipation (2 units) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3

IAS EAS

6 3.6

A mJ

Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on ceramic substrate of 2000 mm x 1.6 mm 3. Starting Tch = 25C, VDD =
1 2
2

x VDSS, RG = 25 , L = 100 H, VGS = VGSS 0 V

Data Sheet G16954EJ3V0DS

 PA2790GR
ELECTRICAL CHARACTERISTICS (TA = 25C. All terminals are connected.)
N-channel
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note

SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3

TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3 A VGS = 10 V, ID = 3 A VGS = 4.5 V, ID = 3 A VGS = 4.0 V, ID = 3 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 3 A VGS = 10 V RG = 10

MIN.

TYP.

MAX. 10

UNIT

A A
V S

10
1.5 2 21 28 34 500 135 77 9.2 8.8 28 7.4 28 40 53 2.5

Drain to Source On-state Resistance

m m m pF pF pF ns ns ns ns nC nC nC V ns nC

Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note

Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr

ID = 6 A VDD = 24 V VGS = 10 V IF = 6 A, VGS = 0 V IF = 6 A, VGS = 0 V di/dt = 100 A/s

12.6 1.7 3.8 0.85 18 11

Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L VDD PG. RG

RL VDD

VGS VGS
Wave Form

10%

VGS

90%

VDS
90% 90% 10% 10%

BVDSS IAS ID VDD VDS

VGS 0 = 1 s Duty Cycle 1%

VDS VDS
Wave Form

td(on) ton

tr

td(off) toff

tf

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T. IG = 2 mA PG. 50

RL VDD

Data Sheet G16954EJ3V0DS

 PA2790GR
P-channel
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note

SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3

TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = m16 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3 A VGS = 10 V, ID = 3 A VGS = 4.5 V, ID = 3 A VGS = 4.0 V, ID = 3 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 3 A VGS = 10 V RG = 10

MIN.

TYP.

MAX. 10

UNIT

A A
V S

m10
1.0 2 43 58 65 460 130 77 8.5 4.8 42 19 60 80 110 2.5

Drain to Source On-state Resistance

m m m pF pF pF ns ns ns ns nC nC nC V ns nC

Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note

Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr

ID = 6 A VDD = 24 V VGS = 10 V IF = 6 A, VGS = 0 V IF = 6 A, VGS = 0 V di/dt = 100 A/s

11 1.7 3.3 0.92 21 12

Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V ID VDD 50 L VDD PG. BVDSS VDS VGS() 0 Starting Tch = 1 s Duty Cycle 1% VDS
Wave Form

TEST CIRCUIT 2 SWITCHING TIME

D.U.T. RL RG VDD VDS()

90% 10% 10% 90%

VGS() VGS
Wave Form

10%

VGS

90%

IAS

VDS
0

td(on) ton

tr td(off) toff

tf

TEST CIRCUIT 3 GATE CHARGE

D.U.T. IG = 2 mA PG. 50 RL VDD

Data Sheet G16954EJ3V0DS

 PA2790GR
TYPICAL CHARACTERISTICS (TA = 25C)
(1) N-channel
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
PT - Total Power Dissipation - W/package

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 2.4 2 units 2.0 1 unit 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160
Mounted on ceramic substrate of 2000 mm2 x 1.6 mm

dT - Percentage of Rated Power - %

100 80 60 40 20 0

20

40

60

80

100 120 140 160

TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA

TA - Ambient Temperature - C

100
ID(pulse) RDS(on) Limited (at VGS = 10 V) PW = 100 s ID(DC)

ID - Drain Current - A

10

DC

10 ms 100 ms Power Dissipation Limited

1 ms

0.1

TA = 25C Single pulse Mounted on ceramic substrate of 2000 mm x 1.6 mm

2

0.01 0.01

0.1

10

100

VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
rth(t) - Transient Thermal Resistance - C/W

100

Rth(ch-A) = 73.5C/W

10

1 TA = 25C, Single pulse, 1 unit Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000

0.1 100

Data Sheet G16954EJ3V0DS

 PA2790GR
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS

25 10 V
ID - Drain Current - A

100
4.5 V
ID - Drain Current - A

20 15 10 5 Pulsed 0 0 0.5 1 1.5 2

VDS - Drain to Source Voltage - V

10 TA = 55C 25C 75C 150C

VGS = 4.0 V

0.1 VDS = 10 V Pulsed 0.01 0 1 2 3 4 5

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

3
VGS(off) - Gate Cut-off Voltage - V

100 TA = 55C 25C 75C 150C

10

1 VDS = 10 V ID = 1 mA 0 -50 0 50 100 150

Tch - Channel Temperature - C

1 VDS = 10 V Pulsed 0.1 0.1 1 10 100

ID - Drain Current - A

150 Pulsed 125 100 75 50 25 0 0.1 1 10 100

ID - Drain Current - A

RDS(on) - Drain to Source On-state Resistance - m

RDS(on) - Drain to Source On-state Resistance - m

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

150 125 100 75 50 25 0 0 5 10 15 20

VGS - Gate to Source Voltage - V

ID = 3 A Pulsed

VGS = 4.0 V 4.5 V 10 V

Data Sheet G16954EJ3V0DS

 PA2790GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

RDS(on) - Drain to Source On-state Resistance - m

50 40 30 20 10 0 -50 0 50 100 150

Tch - Channel Temperature - C Ciss, Coss, Crss - Capacitance - pF

10000
VGS = 4.0 V 4.5 V 10 V

VGS = 0 V f = 1 MHz 1000 Ciss 100

Coss Crss

ID = 3 A Pulsed

10 0.1 1 10 100
VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

<R>
30
VDS - Drain to Source Voltage - V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100
td(on), tr, td(off), tf - Switching Time - ns

15 VDD = 24 V 15 V 6V
VGS - Gate to Source Voltage - V

tf 10 td(on)

td(off)

20

10

10

tr

VGS VDS

VDS = 15 V VGS = 10 V RG = 10 1 10 100

ID = 6 A 0 10 15

1 0.1
ID - Drain Current - A

0 0 5
QG - Gate Charge - nC

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT

100
trr - Reverse Recovery Time - ns IF - Diode Forward Current - A

100

10 VGS = 10 V 1 0V

10

0.1 Pulsed 0.01 0 0.5 1

VF(S-D) - Source to Drain Voltage - V

di/dt = 100 A/s VGS = 0 V 1 0.1 1 10 100

IF - Diode Forward Current - A

Data Sheet G16954EJ3V0DS

 PA2790GR
(2) P-channel
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
PT - Total Power Dissipation - W/package

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 2.4 2 units 2.0 1 unit 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160
Mounted on ceramic substrate of 2000 mm2 x 1.6 mm

dT - Percentage of Rated Power - %

100 80 60 40 20 0

20

40

60

80

100 120 140 160

TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA

TA - Ambient Temperature - C

-100
ID(DC) ID(pulse) PW = 100 s

ID - Drain Current - A

-10

RDS(on) Limited (at VGS = 10 V) DC

-1

1 ms 10 ms 100 ms Power Dissipation Limited

-0.1

TA = 25C Single pulse Mounted on ceramic substrate of 2000 mm x 1.6 mm

2

-0.01 -0.01

-0.1

-1

-10

-100

VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
rth(t) - Transient Thermal Resistance - C/W

100

Rth(ch-A) = 73.5C/W

10

1 TA = 25C, Single pulse, 1 unit Mounted on ceramic substrate of 2000 mm2 x 1.6 mm 0.1 100
1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000

Data Sheet G16954EJ3V0DS

 PA2790GR
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS

-25 VGS = 10 V
ID - Drain Current - A

-100
4.5 V
ID - Drain Current - A

-20 -15 4.0 V -10 -5 Pulsed 0 0 -0.5 -1 -1.5 -2

VDS - Drain to Source Voltage - V

-10

-1

-0.1

TA = 55C 25C 75C 150C VDS = 10 V Pulsed

-0.01 0 -1 -2 -3 -4 -5
VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

-3
VGS(off) - Gate Cut-off Voltage - V

100 TA = 55C 25C 75C 150C

-2

10

-1 VDS = 10 V ID = 1 mA 0 -50 0 50 100 150

Tch - Channel Temperature - C

1 VDS = 10 V Pulsed 0.1 -0.1 -1 -10 -100

ID - Drain Current - A

300 250 200 150 100 50

RDS(on) - Drain to Source On-state Resistance - m

RDS(on) - Drain to Source On-state Resistance - m

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

Pulsed

300 250 200 150 100 50 0 0 -5 -10

I D = 3 A Pulsed

VGS = 4.0 V 4.5 V 10 V

0 -0.1

-1

-10

-100

-15

-20

ID - Drain Current - A

VGS - Gate to Source Voltage - V

Data Sheet G16954EJ3V0DS

 PA2790GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

RDS(on) - Drain to Source On-state Resistance - m

100 80 60 40 20 0 -50 0 50 100 150

Tch - Channel Temperature - C Ciss, Coss, Crss - Capacitance - pF

10000
VGS = 4.0 V 4.5 V 10 V

VGS = 0 V f = 1 MHz 1000 Ciss 100

Coss Crss

ID = 3 A Pulsed

10 -0.1

-1

-10

-100

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

<R>
VDS - Drain to Source Voltage - V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100
td(on), tr, td(off), tf - Switching Time - ns

-30

-15
VGS - Gate to Source Voltage - V

td(off) tf 10 td(on
)

-20

V DD = 24 V 15 V 6 V

-10

tr

-10

V GS

-5

1 -0.1

VDS = 15 V VGS = 10 V RG = 10 -10 -100

V DS 0 0 5 10

ID = 6 A 0 15

-1

ID - Drain Current - A

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT

100
IF - Diode Forward Current - A

100
VGS = 10 V
trr - Reverse Recovery Time - ns

10

0V

10

0.1 Pulsed 0.01 0 0.5 1

VF(S-D) - Source to Drain Voltage - V

di/dt = 100 A/s VGS = 0 V 1 0.1 1 10 100

IF - Diode Forward Current - A

10

Data Sheet G16954EJ3V0DS

 PA2790GR

The information in this document is current as of September, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1