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Power MOSFET
SYMBOL
ORDERING INFORMATION
Order Number Normal 2N60-TA3-T 2N60-TF3-T 2N60-TM3-T 2N60-TN3-R 2N60-TN3-T Lead Free Plating 2N60L-TA3-T 2N60L-TF3-T 2N60L-TM3-T 2N60L-TM3-T 2N60L-TN3-T Package TO-220 TO-220F TO-251 TO-252 TO-252
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2N60
Power MOSFET
THERMAL DATA
PARAMETER Thermal Resistance Junction-Ambient PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F SYMBOL JA RATINGS 112 112 54 54 12 12 4 4 UNIT
Jc
C / W
VDS = VGS, ID = 250A VGS = 10V, ID =1A VDS = 50V, ID = 1A (Note 1) VDS =25V, VGS =0V, f =1MHz
4.0 5
V S pF pF pF
350 50 7
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2N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage Continuous Drain-Source Current Pulsed Drain-Source Current Reverse Recovery Time Reverse Recovery Charge SYMBOL tD (ON) tR tD(OFF) tF QG QGS QGD VSD ISD ISM tRR QRR TEST CONDITIONS VDD =300V, ID =2.4A, RG=25 (Note 1,2) MIN TYP 10 25 20 25 9.0 1.6 4.3 MAX 30 60 50 60 11 UNIT ns ns ns ns nC nC nC V A A ns C
Note: 1. Pulse Test: Pulse Width 300s, Duty Cycle2% 2. Essentially Independent of Operating Temperature
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2N60
Power MOSFET
www.artschip.com
2N60
Power MOSFET
www.artschip.com
2N60
Power MOSFET
TYPICAL CHARACTERISTICS
On-Region Characteristics Transfer Characteristics
Drain-Source Voltage, VDS (V) On-Resistance Variation vs. Drain Current and Gate Voltage
Gate-Source Voltage, VGS (V) Body Diode Forward Voltage Variation vs. Source Current and Temperature
Source-Drain Voltage, VSD (V) Gate Charge vs. Gate Charge Voltage
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2N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage vs. Temperature On-Resistance vs. Temperature
Case Temperature, TC ()
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