OPTICAL DRIVERS AND DETECTORS

IDC

Light sources
G

Characteristics required
Effective coupling to fibres down to 8.5 microns diameter Easily modulated with linear characteristics igh output power igh reliability !mall si"e and weight #ow cost

IDC

#ight emitting diodes $#EDs%

&ade from p' and n'type semiconductor substrates &ost common materials
( )allium aluminium arsenide $)a*l*s% for 8++ to ,++ nm wavelengths ( )allium arsenide $)a*s% for ,-+ nm ( )allium arsenide phosphorous $)a*s.% for //+ nm $red for plastic fibres% ( Indium gallium arsenide phosphide $In)a*s.% for 0-++ and 055+ nm

IDC

 . ' type substrate

( &ore protons than electrons ' holes ( *pply 1ve voltage

2 ' type substrate

( &ore electrons than protons ( *pply 've voltage

Electrons and holes flow toward the 3unction and combine4 emitting photons 5orbidden bandgap determines the energy of the emitted photon
IDC

Basic LED operation

#ight Emission

p ' region

6ias 7oltage

'

'1 '

n ' region

IDC

'1 '
8ecombination

1
9unction

Bandgap determines photon energy emission

Energy $e7%

'

Conduction 6and $5ree Electrons%

6andgap $w%

hf *mount of Energy released when electron drops to valence band and recombination occurs

IDC

7alence 6and 1 $6ound Electrons ' 5ree oles%

'

#ED geometry
!tandard #EDs emit light in all directions 5ibre #EDs must emit light in a narrower confined beam :ypes
( 6urrus
G

* hole is etched into the substrate for fibre ;ses a very thin active region to confine the light

( Edge emitting diodes

G

IDC

Edge emitting LED

-++ m &etal

. ' 8egion 5+ m *ctive #ayer n ' 8egion $substrate% !i<2 Insulating #ayer &etal 0++
IDC

#ight Emission

&etal !tripe Confines Charge Carriers #aterally

<perating characteristics
<utput power
( 0 m= ma>. Down to several =

.ower consumption
( ?+ to 0++ m*4 0.? to 0.8 74 up to 08+ m=

!pectral widths
( - d6 optical power bandwidth ( @+ nm at 85+ nm4 8+ nm at 0-++ nm ( Increased spectral width causes increased dispersion

<perating lifetime
IDC

( =hen output power has dropped by - d6 ( A 00 years

Cont.

DIODE AND LASER CHARACTERISTICS

IDC

 &odulation
( &ostly digital ' $#ED turned on and off% ( *nalogue possible $requires forward DC bias%

:emperature effects
( <perating range '/5 to 0?5 degrees C ( <utput power decreases with temperature +.+0? d6 B CC

IDC

Practica LED pac!ages

5ibre a% #E2! #ED :<08 &etal Cap #E2! coupling $for large fibres A0+++ microns%

eader

5ibre :ransparent =indow &icrolens #ED

IDC

b%

&icrolensed #ED $5+ micron fibres%

&etal Cap

:<08

eader

Diode Packaging

IDC

Integrated Connectors

IDC

ANALOG AND DIGITAL DIODE CONTROLS

IDC

Laser diodes
#aser Dlight amplification by stimulated emission of radiationE G <perate on similar principles to edge #EDs. G * resonant optical cavity
G

8eflective ends Dc biased .hotons striFe electrons and stimulate further photon emission #ight amplified and escapes as laser beam
IDC

Laser diode operation

IDC

<perating characteristics
<utput power
( 0m= to several hundred m=

.ower consumption
( -+ to ?5+ m*4 0.? to ? 74 -+ to 5++ m=

!pectral width
( 0 nm at 85+nm4 - nm at 0-++nm

#ifetimes
( 00 years at ?? degrees C ( 0 year at G+ degrees C
IDC

 &odulation
( &ostly digital
G

!witched onBoff close to threshold *bove threshold current

( *nalogue possible
G

:emperature effects
( :hreshold current increases with temperature ' 0.5 H per degree C ( <utput power decreases as temperature increases

IDC

Laser diode po"er # current # temperature cur$es

IDC

VCSEL
7ertical Cavity !urface Emitting #aser G Cheap laser diode G #ess energy required for laser operation G Emits narrow4 more circular beam G <perate at 85+ and 0-++ nm G !peeds up to 0+ )bps
G
IDC

VCSEL Chip

IDC

ANALOG AND DIGITAL LASER CONTROL CIRCUITS

IDC

Laser diode pac!age

Insulation Contact =ire #aser Diode Circuit Connection

5ibre .igtail

)rooved 6locF
IDC

:hreaded )round :erminal

Cap

Laser diode transmitter modu e

.hotodetector

#aser Diode

Diode :erminal

)rooved 6locF

5ibre
IDC

Laser

od!"e

IDC

Laser sa%ety &

*ll laser devices should be considered ha"ardous to the human eye. Under no circumstances look directly into the laser path! G :he 0-++ and 055+ nm wavelengths are invisible to the human eye but will burn the retina.
G

IDC

Optica detectors
G

Converts photon light energy to electrical energy

G G
IDC

&ust be very low inherent noise device .rovide amplification of low level signals

.in photodiodes
;se reverse process of the #ED Common response times of +.5 to 0+ ns $? ) " to 0++ & "%. !pecial devices down to 0+ ps $0++ ) "%

IDC

Pin photodiode
.hoton

'

'
7 .1

1
I Intrinsic 8egion n1 8# 7<;:

IDC

*valanche photodiodes
igh reverse bias voltages cause an increasing avalanche of charges in the semiconductor areas.
( Increased sensitivity to incoming light ( Internal amplification ( :wice the response time for standard devices

*dvantages

Disadvantages
( &ore comple> ( Increase costs ( #ess reliable
IDC

;sed for low signal to noise requirements and long distance telecommunications.

A$a anche photodiodes

IDC

IDC

APD Recei#er

IDC

*mplifiers
8equired because the very low levels of light produce tiny currents in the detectors
( * light signal of 0 = will produce /++ n* in a pin diode ( need to amplify..

Can be 5E:
( )reater sensitivity at lower data rates I lowest noise

<r bipolar
( 5or high data rates

IDC

Optical amplifiers
*mplification without conversion to electrical energy ;se stimulated emission principle for single photon pass Doped fibres
( Erbium for 055+ nm ( .raseodymium for 0-++ nm

!emiconductor lasers
( .roblems matching wide diameter fibre cores to small laser areas ( *ctive layer narrow ' , m to 0 m

IDC

Doped 'i(re Amp i%ier

.ump laser ,8+nm Erbium doped fibre 8aises energy of Erbium atoms

Incident #ight 05@+nm

IDC

!timulates Emission at 05@+nm

*mplified <utput 05@+nm

IDC

ED$A

IDC

Semiconductor Laser Amp i%ier

!emiconductor #aser *mplifier Core Core

I2.;: 5I68E Incident light beam *ctive #ayer

IDC

<;:.;: 5I68E <utput light beam