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Siliconix
rDS(on) (W)
0.015 @ VGS = 10 V 0.024 @ VGS = 4.5 V
ID (A)a
"13 "8
S
TO-252
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
30 "20 "13 "8 "100 13 70 4a 55 to 150
Unit
V
W _C
Symbol
RthJA RthJC
Typical
Maximum
30 1.8
Unit
_C/W
Notes a. Calculated Rating for TA = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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SUD45P03-15
Siliconix Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VDS = 5 V, VGS = 4.5 V VGS = 10 V, ID = 13 A Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 13 A, TJ = 125_C VGS = 4.5 V, ID = 13 A Forward Transconductance b gfs VDS = 15 V, ID = 13 A 20 50 20 0.012 0.018 0.020 0.015 0.026 0.024 S W A 30 V 1.0 "100 1 50 nA mA
Symbol
Test Condition
Min
Typa
Max
Unit
ID(on) D( )
Dynamica
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.33 W ID ^ 45 A, VGEN = 10 V, RG = 2.4 W VDS = 15 V, VGS = 10 V, ID = 45 A VGS = 0 V, VDS = 25 V, F = 1 MHz 3200 800 280 50 14 6.2 13 10 50 20 20 20 100 40 ns 125 nC pF
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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SUD45P03-15
Siliconix
Output Characteristics
7V 6V
80
Transfer Characteristics
TC = 55_C
60
25_C 125_C
40
4V
20
VGS Gate-to-Source Voltage (V) 0.05 0.04 VGS = 4.5 V 0.03 0.02 VGS = 10 V 0.01 0
Transconductance
TC = 55_C 25_C rDS(on) On-Resistance ( W )
125_C
10
20
30
40
50
60
20
40
60
80
100
ID Drain Current (A) 4500 3600 C Capacitance (pF) 2700 1800 900 0 Crss Coss
Capacitance
Gate Charge
Ciss
10
15
20
25
30
10
20
30
40
50
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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SUD45P03-15
Siliconix
TJ = 150_C TJ = 25_C 10
25
50
75
100
125
150
Thermal Ratings
20 16 I D Drain Current (A) 12 8 4 0 I D Drain Current (A)
100 Limited by rDS(on) 10, 100 ms 10 1 ms 10 ms 1 TA = 25_C Single Pulse 100 ms 1s dc 0 25 50 75 100 125 150 0.1 0.1 1 10 100 VDS Drain-to-Source Voltage (V)
TA Ambient Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 104 103 102 101
10
30
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