MM

Overview of Microstrip Antennas
David R. Jackson
Dept. of ECE
University of Houston
Overview of Microstrip Antennas
Also called patch antennas
One of the most useful antennas at microwave frequencies
(f > 1 GHz).
It consists of a metal patch on top of a grounded
dielectric substrate.
The patch may be in a variety of shapes, but rectangular
and circular are the most common.

Geometry of Rectangular Patch
x
y
h
L
W
Note: L is the resonant dimension. The width W is usually
chosen to be larger than L (to get higher bandwidth).
Geometry of Rectangular Patch
view showing coaxial feed
x
y
L
W
feed at (x
0
, y
0
)
Advantages of Microstrip Antennas
Low profile (can even be conformal).
Easy to fabricate (use etching and phototlithography).
Easy to feed (coaxial cable, microstrip line, etc.) .
Easy to use in an array or incorporate with other
microstrip circuit elements.
Patterns are somewhat hemispherical, with a
moderate directivity (about 6-8 dB is typical).
Disadvantages of Microstrip Antennas
Low bandwidth (but can be improved by a variety of
techniques). Bandwidths of a few percent are typical .
Efficiency may be lower than with other antennas.
Efficiency is limited by conductor and dielectric
losses*, and by surface-wave loss**.
* Conductor and dielectric losses become more
severe for thinner substrates.

** Surface-wave losses become more severe for
thicker substrates (unless air or foam is used).
Basic Principles of Operation
The patch acts approximately as a resonant cavity (short
circuit walls on top and bottom, open-circuit walls on the
sides).
In a cavity, only certain modes are allowed to exist, at
different resonant frequencies.
If the antenna is excited at a resonant frequency, a strong
field is set up inside the cavity, and a strong current on the
(bottom) surface of the patch. This produces significant
radiation (a good antenna).
Modes of Rectangular Patch
x
y
L
W
(x
0
, y
0
)
cos cos
m x n y
E z
L W
t t
| | | |
=
| |
\ . \ .
Note: on edges,
0
z
E
n
c
=
c
To find the patch current, use
1
H E
je
= V

s
J n H z H = =
Resonance Frequencies
x
y
L
W
(x
0
, y
0
)
2 2
0
z z
E k E V + =
cos cos
z
m x n y
E
L W
t t
| | | |
=
| |
\ . \ .
2 2
2
0
z
m n
k E
L W
t t
(
| | | |
+ =
(
| |
\ . \ .
(

Hence
2 2
2
0
m n
k
L W
t t
(
| | | |
+ =
(
| |
\ . \ .
(

Resonance Frequencies
x
y
L
W
(x
0
, y
0
)
2 2
2
m n
k
L W
t t
| | | |
= +
| |
\ . \ .
0 0 r
k e c c =
Recall that
2 f e t =
Hence
2 2
2
r
c m n
f
L W
t t
t c
| | | |
= +
| |
\ . \ .
0 0
1/ c c =
Resonant Frequencies
x
y
L
W
(x
0
, y
0
)
2 2
2
mn
r
c m n
f
L W
t t
t c
| | | |
= +
| |
\ . \ .
Hence
mn
f f =
(resonance frequency of (m, n) mode)
(1,0) Mode
This mode is usually used because the
radiation pattern has a broadside beam.
10
1
2
r
c
f
L
c
| |
=
|
\ .
cos
z
x
E
L
t
| |
=
|
\ .
sin
s
x
J x
L
t
| |
=
|
\ .
This mode acts as a wide
microstrip line (width W)
that is resonant at 0.5
wavelengths long in the x
direction.
x
y
L
W
current
Basic Properties of Microstrip Antenna
The resonance frequency is controlled by the
patch length L and the substrate permittivity.
Resonance Frequency
10
1
2
r
c
f
L
c
| |
=
|
\ .
Note: a higher substrate permittivity allows for a
smaller antenna (miniaturization).
Approximately,
Note: this is equivalent to
saying that the length L is
one-half of a wavelength in the
dielectric:
0
/ 2
/ 2
d
r
L

c
= =
The calculation can be improved by adding a
fringing length extension AL to each edge of the
patch to get an effective length L
e
.
Resonance Frequency (cont.)
10
1
2
e
r
c
f
L
c
| |
=
|
\ .
2
e
L L L = + A
y
x
L
L
e
AL AL
Hammerstad formula:
( )
( )
0.3 0.264
/ 0.412
0.258 0.8
eff
r
eff
r
W
h
L h
W
h
c
c
(
| |
+ +
|
(
\ .
(
A =
| |
(
+
|
(
\ .

1/ 2
1 1
1 12
2 2
eff
r r
r
h
W
c c
c

( +
| | | |
= + +
| |
(
\ . \ .

Note:
0.5 L h A ~
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07
h /
0
0.75
0.8
0.85
0.9
0.95
1
N
O
R
M
A
L
I
Z
E
D

F
R
E
Q
U
E
N
C
Y
Hammerstad
Measured
W/ L = 1.5
c
r
= 2.2
The resonance frequency has been
normalized by the zero-order value (without
fringing):
f
N
= f / f
0
Resonance frequency
The bandwidth is directly proportional to substrate
thickness h.
However, if h is greater than about 0.05
0
, the
probe inductance becomes large enough so that
matching is difficult.
The bandwidth is inversely proportional to c
r
.
The bandwidth is directly proportional to the width
W. (Normally W < 2L to avoid excitation of (0,1)
mode before the (2, 0) mode, to maximize the
useable band. W = 1.5 L is typical.)
Bandwidth
Bandwidth (cont.)
For a typical substrate thickness (h /
0
= 0.02), and a
typical substrate permittivity (c
r
= 2.2) the bandwidth is
about 3%.
By using a thick foam substrate, bandwidth of about
10% can be achieved.
By using special feeding techniques (aperture coupling)
and stacked patches, bandwidth of over 50% have been
achieved.
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h /
0
0
5
10
15
20
25
30
B
A
N
D
W
I
D
T
H

(
%
)c
r
2.2
= 10.8
W/ L = 1.5 c
r
= 2.2 or 10.8
Bandwidth
discrete data points are
measured values
The resonant input resistance is almost independent
of the substrate thickness h.
The resonant input resistance is proportional to c
r.

The resonant input resistance is directly controlled by
the location of the fed point. (maximum at edges x = 0
or x = L, zero at center of patch.
Resonant Input Resistance
L
W
(x
0
, y
0
)
L
Resonant Input Resistance (cont.)
Note: patch is usually fed along
the centerline (y = W /2) to
maintain symmetry and thus
minimize excitation of
undesirable modes.
L
x
W
(x
0
, y
0
)
y
For a given mode, it can be shown that the resonant input
resistance is proportional to the square of the cavity-mode
field at the feed point.
( )
2
0 0
,
in z
R E x y
For (1,0) mode:
2
0
cos
in
x
R
L
t
| |
|
\ .
L
x
W
(x
0
, y
0
)
y
Hence, for (1,0) mode:
2
0
cos
in edge
x
R R
L
t
| |
=
|
\ .
L
x
W
(x
0
, y
0
)
y
The value of R
edge
depends strongly
on the substrate permittivity. For a
typical patch, it may be about 100-
200 Ohms.
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08
h /
0
0
50
100
150
200
I
N
P
U
T

R
E
S
I
S
T
A
N
C
E

(

O

)
2.2
r
= 10.8
c
c
r
= 2.2 or 10.8
W/L = 1.5
x
0
= L/4, y
0
= W/2
L
x
W
(x
0
, y
0
)
Resonant input resistance
discrete data
point are from
a CAD formula
Radiation Efficiency
The radiation efficiency is less than 100% due to
conductor loss
dielectric loss
surface-wave power
Radiation efficiency is the ratio of power radiated
into space, to the total input power.
r
r
tot
P
e
P
=
Radiation Efficiency (cont.)
surface wave
TM
0
cos (|) pattern
x
y
( )
r r
r
tot r c d sw
P P
e
P P P P P
= =
+ + +
P
r
= radiated power
P
tot
= total input power
P
c
= power dissipated by conductors
P
d
= power dissipated by dielectric
P
sw
= power launched into surface wave
Hence,
Conductor and dielectric loss is more important for thinner
substrates.
Conductor loss increases with frequency (proportional to f
)
due to the skin effect. Conductor loss is usually more
important than dielectric loss.
2
o
eo
=
1
s
R
oo
=
R
s
is the surface resistance
of the metal. The skin depth
of the metal is o.
Surface-wave power is more important for thicker
substrates or for higher substrate permittivity. (The
surface-wave power can be minimized by using a foam
substrate.)
For a foam substrate, higher radiation efficiency is
obtained by making the substrate thicker (minimizing the
conductor and dielectric losses). The thicker the better!
For a typical substrate such as c
r
= 2.2, the radiation
efficiency is maximum for h /
0
~ 0.02.
c
r
= 2.2 or 10.8 W/L = 1.5
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h /
0
0
20
40
60
80
100
E
F
F
I
C
I
E
N
C
Y

(
%
)
exact
CAD
Conductor and dielectric losses are neglected
2.2
10.8
0 0.02 0.04 0.06 0.08 0.1
h /
0
0
20
40
60
80
100
E
F
F
I
C
I
E
N
C
Y

(
%
)
c = 10.8
2.2
exact
CAD
r
c
r
= 2.2 or 10.8 W/L = 1.5
Total radiation efficiency (accounting for all losses)
Radiation Patterns
The E-plane pattern is typically broader than the H-
plane pattern.
The truncation of the ground plane will cause edge
diffraction, which tends to degrade the pattern by
introducing:
rippling in the forward direction
back-radiation

Note: pattern distortion is more severe
in the E-plane, due to the angle
dependence of the SW pattern (cos (|)).
-90
-60
-30
0
30
60
90
120
150
180
210
240
-40
-30
-30
-20
-20
-10
-10
E-plane pattern
Red: infinite substrate and ground plane
Blue: 1 meter ground plane
H-plane pattern
Red: infinite substrate and ground plane
Blue: 1 meter ground plane

-90
-45
0
45
90
135
180
225
-40
-30
-30
-20
-20
-10
-10
Directivity
The directivity is insensitive to the substrate thickness.
The directivity is higher for lower permittivity, because
the patch is larger.
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h /
0
0
2
4
6
8
10
D
I
R
E
C
T
I
V
I
T
Y

(
d
B
)
exact
CAD
= 2.2
10.8
c
r
c
r
= 2.2 or 10.8 W/ L = 1.5
Directivity
Approximate CAD Model for Z
in

Near the resonance frequency, the patch cavity can be
approximately modeled as an RLC circuit.
A probe inductance L
p
is added in series, to account for the
probe inductance.
L
p
R

C

L

Z
in

probe patch cavity
Approximate CAD Model (cont.)
L
p
R

C

L

( )
0
1 2 / 1
in p
R
Z j L
j Q f f
e ~ +
+
0
R
Q
L e
=
1
2
BW
Q
=
BW is defined here
by SWR < 2.0.
0 0
1
2 f
LC
e t = =
L
p
R

C

L

in max
R R =
R
in max
is the input resistance at the resonance of
the patch cavity (the frequency that maximizes R
in
).
4 4.5 5 5.5 6
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
80
R
i
n

(

O

)
CAD
exact
Input resistance vs. frequency
c
r
= 2.2 W/L = 1.5 L = 3.0 cm
Input reactance vs. frequency
c
r
= 2.2
W/L = 1.5
4 4.5 5 5.5 6
FREQUENCY (GHz)
-40
-20
0
20
40
60
80
X
i
n

(

O

)
CAD
exact
L = 3.0 cm
frequency where the input
resistance is maximum
frequency where the input
impedance is real
shift due to probe reactance
0.577216
( )
( )
0
0
0
2
ln
2
f
r
X k h
k a
q

t
c
(
| |
= + (
|
|
(
\ .

(Eulers constant)
Approximate CAD formula for feed (probe) reactance
f p
X L e =
0 0 0
/ 376.73 q c = = O
a = probe radius h = probe height
( )
( )
0
0
0
2
ln
2
f
r
X k h
k a
q

t
c
(
| |
= + (
|
|
(
\ .

Feed (probe) reactance increases proportionally with
substrate thickness h.
Feed reactance increases for smaller probe radius.
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
X
r
0
5
10
15
20
25
30
35
40
X
f

(
O
)
CAD
exact
Probe reactance (X
f
= eL
p
)

x
r
= 1 2 ( x
0
/ L)
x
r
is 0 at the center of the patch, and is
1.0 at the patch edge.
c
r
= 2.2
W/L = 1.5
h = 0.0254
0

a = 0.5 mm
CAD Formulas
In the following viewgraphs, CAD formulas for the important
properties of the rectangular microstrip antenna will be shown.
CAD Formula: Radiation Efficiency
0 0 1 0
1 3 1
1
/ 16 /
hed
r
r
hed
s r
r d
e
e
R L
e
h pc W h
c
t q
=
( (
| || | | | | |
| | | |
+ +
( ( | | | | | |
\ . \ .
\ . \ .\ . \ .

where
tan loss tangent of substrat
d
e o = =
1
surface resistance of metal
2
s
R
e
oo o
= = =
1
2
1 2/ 5
1
r r
c
c c
= +
( )
( )
( ) ( )
( ) ( )
2 4 2
2
2
0 2 4 0 2 0
2 2
2 2 0 0
3 1
1 2
10 560 5
1
70
a
p k W a a k W c k L
a c k W k L
| | | |
= + + + +
| |
\ . \ .
| |
+
|
\ .
and
2
0.16605 a =
4
0.00761 a =
2
0.0914153 c =
( )
3
0
1
1
3 1 1
1 1
4
hed
r
r
e
k h
c
t
c
=
| || |
+
| |
\ .\ .
and
(Physically, this term is the radiation efficiency of a
horizontal electric dipole (hed) on top of the substrate.)
CAD Formula: Bandwidth
1
0 0 0
1 1 16 1
/ 3
2
s
d
hed
r r
R pc h W
BW
h L e tq c
(
| |
| | | | | | | |
| | | |
= + + ( |
| | | |
| |
|
\ . \ .
(
\ . \ . \ . \ .
\ .

BW is defined from the frequency limits f
1
and f
2
at
which SWR = 2.0:
2 1
0
f f
BW
f
= (multiply by 100 if you want to get %)

CAD Formula: Resonant Input Resistance
( )
0
0 2
0
1
0 0 0
4
cos
1 16 1
/ 3
s
d
hed
r r
L h
W
x
R
L
R pc W h
h L e
q
t
t
t q c
(
| |
| | | |
( | | |
\ . \ . | |
\ .
(
=
|
(
| || | | | | | | |
\ . | | | |
+ +
(
| | | | | | |
\ . \ .
(
\ . \ . \ .\ . \ .

CAD Formula: Directivity
( )
( )
2
0
0
2 1
0
tanc
1
40
1
1 tan
r
r
r
k h
D
pc
k h
c
q
t
c
c
(
(
| | | |
(
=
| |
(
| |
\ .\ .
+
(
|
(
\ .

( ) ( )
tanc tan / x x x
where
CAD Formula: Directivity
0
1
1
40
D
pc
q
t
| | | |
~
| |
\ .\ .
For thin substrates,
(The directivity is essentially independent of the
substrate thickness.)
CAD Formula: Radiation Patterns
( )
2 2
sin
cos
2
2
( , , ) , ,
2
2
2 2
y
x
hex
i i
y
x
k W
k L
WL
E r E r
k W
k L
t
u | u |
t
( ( | |
| |
( ( |
|
| |
\ . \ .
( (
=
|
( (
\ .
| | | |

( (
| |
( ( \ . \ .

0
sin cos
x
k k u | =
0
sin sin
y
k k u | =
The hex pattern is for a horizontal electric dipole in the x
direction, sitting on top of the substrate.
or i u | =
CAD Formula: Radiation Patterns
( ) ( )
0
, , cos
hex
E r E G
u
u | | u =
( ) ( )
0
, , sin
hex
E r E F
|
u | | u =
where
( )
( ) ( )
( ) ( ) ( )
0
0
2tan
tan sec
k h N
F
k h N j N
u
u
u u u
=
( )
( ) ( )
( ) ( )
( )
0
0
2tan cos
tan cos
r
k h N
G
k h N j
N
u u
u
c
u u
u
=
( ) ( )
2
sin
r
N u c u =
0
0
0
4
jk r
j
E e
r
e
t

| |
=
|
\ .
Variations of the Microstrip Antenna
Different feeding methods
Ways to improve performance
Feeding Methods: Coaxial Feed
Advantages:
simple
easy to obtain input match
Disadvantages:
difficult to obtain input match for thicker substrates,
due to probe inductance.
significant probe radiation for thicker substrates
Feeding Methods: Microstrip Line
Advantages:
simple
allows for planar feeding
easy to obtain input match
Disadvantages:
significant line radiation for thicker substrates
for deep notches, pattern may shown distortion.
Feeding Methods: Proximity (EMC) Coupling
Advantages:
less line radiation compared
to microstrip feed
Disadvantages:
requires multilayer fabrication
alignment is important for input match
patch
microstrip line
Feeding Methods: Aperture Coupled Feed
Advantages:
feed radiation is isolated from patch radiation
allows for thicker patch substrates, to obtain
higher bandwidth
allows for use of different substrates to
optimize antenna and feed circuit
performance
Disadvantages:
requires multilayer fabrication
alignment is important for input match
patch
microstrip line
slot
Improving Bandwidth: Probe Compensation
L-shaped probe:
capacitive top hat on probe:
Improving Bandwidth: SSFIP
SSFIP: Strip Slot Foam Inverted Patch
microstrip substrate
patch
microstrip line
slot
foam
patch substrate
Bandwidths greater than 25% have been achieved
Improving Bandwidth: Stacked Patches
Bandwidths of 100% have been achieved
microstrip substrate
driven patch
microstrip line
slot
foam
patch substrate
parasitic patch
Increased bandwidth is due to a combination of
increased height and double-tuned resonance
3 4 5 6 7 8 9 10 11 12
Frequency (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
R
e
t
u
r
n

L
o
s
s

(
d
B
)
Measured
Computed
-10 dB S
11
bandwidth is about 100%
double resonance
0
0
. 2
0
. 5
125
1
0 1
8
0
1
7
0
1
6
0
1
5
0
1
4
0
1
3
0
1
2
0
1
1
0
100
90
80
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
- 1
0
- 2
0
-
3
0
-
4
0
-
5
0
- 6
0
- 7
0
- 8 0
- 9 0
- 1 0 0
- 1
1
0
- 1
2
0
-
1
3
0
-
1
4
0
-
1
5
0
- 1
6
0
- 1
7
0
4 GHz
13 GHz
double resonance
Improving Performance:
Reducing Surface-Wave Excitation and
Lateral Radiation
SIDE VIEW
z
b
h
x
shorted annular ring
ground plane
feed
a
0
TOP VIEW
a

o
b
feed
Reduced Surface Wave (RSW) Antenna
-90
-60
-30
0
30
60
90
120
150
180
210
240
-40
-30
-30
-20
-20
-10
-10
-90
-60
-30
0
30
60
90
120
150
180
210
240
-40
-30
-30
-20
-20
-10
-10
conventional RSW
Measurements were taken on a 1 m diameter circular ground plane at
1.575 GHz.
RSW: E-plane Radiation Patterns
Measurement
Theory
Reducing surface-wave excitation and lateral radiation
reduces mutual coupling.
RSW: Mutual Coupling
space-wave radiation
lateral radiation
surface waves
Reducing surface-wave excitation and lateral radiation reduces mutual
coupling.
RSW: Mutual Coupling
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0 1 2 3 4 5 6 7 8 9 10
Separation [Wavelengths]
S
1
2

[
d
B
]
RSW - Measured
RSW - Theory
Conv - Measured
Conv - Theory
References
Computer-Aided Design of Rectangular Microstrip Antennas, D. R.
Jackson, S. A. Long, J. T. Williams, and V. B. Davis, Ch. 5 of Advances
in Microstrip and Printed Antennas, K. F. Lee, Editor, John Wiley, 1997.

More information, references, and CAD formulas may be
found in:
Microstrip Antenna Design Handbook, Garg, Bhartia, Bahl, and
Ittipiboon, Editors, Artech House, 2001.

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Overview of Microstrip Antennas

= (multiply by 100 if you want to get %)

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