TPC8016-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (High-Speed U-MOS III)

TPC8016-H
High-Efficiency DCDC Converter Applications Notebook PC Applications Portable-Equipment Applications
Small footprint due to small and thin package High-speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON-resistance: RDS (ON) = 3.7 m (typ.) High forward transfer admittance: |Yfs| = 25 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm

Absolute Maximum Ratings (Ta = 25C)

Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 20 15 60 1.9 Unit V V V A

JEDEC JEITA TOSHIBA

2-6J1B

Pulsed (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b)

Drain power dissipation

Weight: 0.085 g (typ.)

W

Drain power dissipation

1.0

Circuit Configuration
8 7 6 5

Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy

146 15 0.19 150 55 to 150

mJ A mJ C C

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

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Thermal Characteristics
Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W

Thermal resistance, channel to ambient (t = 10 s) (Note 2b)

Rth (ch-a)

125

C/W

Marking (Note 5)

TPC8016 H

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

Note 1: The channel temperature should not exceed 150C during use.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

FR-4 25.4 25.4 0.8 (unit: mm)

FR-4 25.4 25.4 0.8 (unit: mm)

(a)

(b)

Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 15 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)

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Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (Miller) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 24 V, VGS = 10 V, ID = 15 A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = 20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 7.5 A VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A Min 30 15 1.1 12.5 ID = 7.5 A VOUT RL = 2 Typ. 5.5 3.7 25 2380 410 980 9.8 21 15 60 46 26 7.2 12.2 15.6 Max 10 10 2.3 7.5 5.7 ns nC pF Unit A A V V m S

VDD 15 V < Duty = 1%, tw = 10 s VDD 24 V, VGS = 10 V, ID = 15 A VDD 24 V, VGS = 5 V, ID = 15 A

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 15 A, VGS = 0 V Min Typ. Max 60 1.2 Unit A V

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ID VDS
10 4.5 8 10 3.5 3.2 3.15
Common source Ta = 25C, pulse test

ID VDS
20 4.5 3.5 16 3.05 10 3.2 12 3.1 8 3.0 4 2.9 3.3
Common source Ta = 25C, pulse test

3.1

Drain current ID (A)

6 3.0 4 2.9 2 2.8 VGS = 2.7 V 0.2 0.4 0.6 0.8 1.0

Drain current ID (A)

0 0

0 0

VGS = 2.8 V 0.4 0.8 1.2 1.6 2.0

Drain-source voltage

VDS (V)

Drain-source voltage

VDS (V)

ID VGS
50 Common source VDS = 10 V Pulse test 1

VDS VGS
Common source Ta = 25C Pulse test

VDS (V) Drain-source voltage

25

40

0.8

Drain current ID (A)

30

0.6

20

0.4 ID = 15 A 7.5 3.8

10 100 Ta = 55C 0 0 1 2 3 4 5 6

0.2

0 0

10

12

Gate-source voltage

VGS (V)

Gate-source voltage

VGS (V)

|Yfs| ID
100 100

RDS (ON) ID
Common source Ta = 25C Pulse test

|Yfs| (S)

Ta = 55C 10 100 25

Forward transfer admittance

Drain-source ON-resistance RDS (ON) (m)

10 VGS = 4.5 V 10

Common source VDS = 10 V Pulse test 0.1 0.1 1 10 30 1 0.1 1 10 100

Drain current ID (A)

Drain current ID (A)

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RDS (ON) Ta
12 100 5

IDR VDS

Drain-source ON-resistance RDS (ON) (m)

Drain reverse current IDR

(A)

10

10

ID = 15, 7.5, 3.8 A

10

3 VGS = 0 V 1

VGS = 4.5 V ID = 15, 7.5, 3.8 A 10 Common source Pulse test

0 80

40

40

80

120

160

0.1 0

Common source Ta = 25C Pulse test 0.2 0.4 0.6 0.8 1

Ambient temperature Ta (C)

Drain-source voltage

VDS (V)

Capacitance VDS
10000 2.5

Vth Ta

Vth (V) Gate threshold voltage

Ciss

(pF)

1000 Coss Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10 100

1.5

Capacitance C

Common source 0.5 V DS = 10 V ID = 1 mA Pulse test 0 80 40 0

40

80

120

160

Drain-source voltage

VDS (V)

Ambient temperature Ta (C)

PD Ta
2 (1)
(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b)

Dynamic input/output characteristics

40 Common source Ta = 25C ID = 15 A Pulse test VDD = 24 V 12 20 VDS 12 10 6 2 VGS 6 VDD = 24 V 8 6 4 16 14 12 10

Drain power dissipation PD (W)

VDS (V)

1.6

30

Drain-source voltage

(2) 0.8

0.4

0 0

50

100

150

200

0 0

10

20

30

40

50

0 60

Ambient temperature Ta (C)

Total gate charge Qg (nC)

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Gate-source voltage

1.2

t = 10 s

VGS (V)

TPC8016-H

rth tw
1000
(1) (2) Device mounted on a glass-epoxy board (a) (Note 2a) Device mounted on a glass-epoxy board (b) (Note 2b)

(2)

Normalized transient thermal impedance rth (C/W)

100 (1)

10

Single pulse

0.1 0.001

0.01

0.1

10

100

1000

Pulse width

tw

(S)

Safe operating area

100 ID max (pulse) * t =1 ms* 10

Drain current ID (A)

10 ms*

0.1

0.01 0.01

* Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 1

VDSS max 10 100

Drain-source voltage

VDS (V)

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RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

20070701-EN

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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