AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description
The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard product AO4914 is Pb-free (meets ROHS & Sony 259 specifications).

Features Q1
VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 18m RDS(ON) < 28m

Q2
VDS(V) = 30V ID = 8.5A (VGS = 10V) <18m (VGS = 10V) <28m (VGS = 4.5V)

SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A UIS TESTED! Rg,Ciss,Coss,Crss Tested
D1 K D2

S1/A G1 S2 G2

1 2 3 4

8 7 6 5

D1/K D1/K D2 D2

Q1

Q2

SOIC-8

G1 S1

G2 S2

Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current B Power Dissipation B Avalanche Current TA=25C TA=70C TA=25C TA=70C ID IDM PD IAR EAR TJ, TSTG Symbol VDS TA=25C TA=70C TA=25C TA=70C
B

Max Q1 30 20 8.5 6.6 30 2 1.28 17 43 -55 to 150

Max Q2 30 20 8.5 6.6 30 2 1.28 17 43 -55 to 150

Units V V A W A mJ C Units V A

Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward AF Current

Maximum Schottky 30 3 2.2 20 2 1.28 -55 to 150

IF IFM PD TJ, TSTG

Pulsed Diode Forward Current Power Dissipation

A

W C

Junction and Storage Temperature Range

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4914 Parameter: Thermal Characteristics MOSFET Q1 A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Parameter: Thermal Characteristics MOSFET Q2 A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol RJA RJL Symbol RJA RJL Typ 48 74 35 Typ 48 74 35 Max 62.5 110 40 Max 62.5 110 40 Units C/W

Units C/W

t 10s Steady-State Steady-State

RJA RJL

47.5 71 32

62.5 110 40

C/W

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev: 8 Dec 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4914

Q1 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=8.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A IS=1A,VGS=0V Diode + Schottky Forward Voltage Maximum Body-Diode + Schottky Continuous Current TJ=125C 1.2 30 15.5 22.3 23 23 0.45 0.5 3.5 971 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.35 190 110 0.7 19.2 VGS=10V, VDS=15V, ID=8.5A 9.36 2.6 4.2 5.2 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s IF=8.5A, dI/dt=100A/s 4.4 17.3 3.3 18.8 9.2 7.5 6.5 26 5 23 11 154 0.85 23 11.2 1165 18 27 28 1.8 Min 30 0.007 3.2 12 0.05 10 20 100 3 mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC Typ Max Units V

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current. (Set by Schottky leakage) Gate-Body leakage current Gate Threshold Voltage On state drain current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET + Schottky) Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode + Schottky Reverse Recovery Time Body Diode + Schottky Reverse Recovery Charge

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev: 8 Dec 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4914 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 20 4V 10V 4.5V 3.5V 12 ID(A) 125C 8 VGS=3V 4 25C 16 VDS=5V

0 1.5 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 2 4

28 Normalized On-Resistance 26 24 RDS(ON) (m) 22 20 18 16 14 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 VGS=10V VGS=4.5V

1.6 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2

0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature

40

1.0E+01 1.0E+00 125

40 RDS(ON) (m)

ID=8.5A IS (A)

1.0E-01 1.0E-02 1.0E-03 25

30

125C

20 25C

1.0E-04 1.0E-05

FET+SCHOTTKY

10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts) Figure 6: Body-Diode Characteristics (Note F)

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4914 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=15V ID=8.5A Capacitance (pF) 1500 1250 1000 750 500 250 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 50 RDS(ON) limited 1ms 10ms 0.1s 1.0 1s TJ(Max)=150C TA=25C 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 100s 10s Power (W) 40 30 20 10 TJ(Max)=150C TA=25C Crss 5 10 15 20 25 30

Ciss

VGS (Volts)

Coss FET+SCHOTTKY

VDS (Volts) Figure 8: Capacitance Characteristics

ID (Amps)

10.0

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

40
10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

ZJA Normalized Transient Thermal Resistance

0.1 Single Pulse 0.01 0.00001

PD Ton

0.0001

0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

0.001

0.01

100

1000

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4914

Q2 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250 A, VGS=0V VDS=30V, V GS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250 A VGS=10V, V DS=5V VGS=10V, ID=8.5A TJ=125C 1.2 30 15.5 22.3 23 23 0.75 1 3 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.35 180 110 0.7 19.2 VGS=10V, V DS=15V, ID=8.5A 9.36 2.6 4.2 5.2 VGS=10V, V DS=15V, R L=1.8, RGEN=3 IF=8.5A, dI/dt=100A/ s IF=8.5A, dI/dt=100A/ s 4.4 17.3 3.3 16.7 6.7 7.5 6.5 26 5 21 10 154 0.85 23 11.2 1250 18 27 28 1.8 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev: 8 Dec 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4914

Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 28 Normalized On-Resistance 26 24 RDS(ON) (m ) 22 20 18 16 14 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 VGS=10V VGS=4.5V 1.6 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2 20 4V 10V 4.5V 3.5V ID(A) 12 125C 8 VGS=3V 4 25C 16 VDS=5V

0 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics

0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature

40

1.0E+01 1.0E+00

40 RDS(ON) (m )

ID=8.5A IS (A)

1.0E-01 125C 1.0E-02 25C 1.0E-03

30

125C

20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4914

Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=15V ID=8.5A Capacitance (pF) 1500 1250 Ciss 1000 750 500 Coss 250 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 50 RDS(ON) limited 1ms 10ms 0.1s 1.0 1s TJ(Max)=150C TA=25C 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 100s 10s Power (W) 40 30 20 10 TJ(Max)=150C TA=25C Crss 5 10 15 20 25 30

8 VGS (Volts)

VDS (Volts) Figure 8: Capacitance Characteristics

ID (Amps)

10.0

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

40
10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1 Single Pulse 0.01 0.00001

PD Ton

0.0001

0.001

0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

0.01

100

1000

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com