Top down fabrication methods

Top down fabrication methods
z Optical
z X‐Ray
z EUV
z EBeam
z SPM
z Imprinting
 Optical Lithography
Optical Lithography
1. Preparation
p
z Chemically Cleaning to remove contamination

2. Coat Resist
z The wafer is covered with photo resist by
spin
i coating
ti

3. Expose
z typically uses ultraviolet light

4 Develop 
4. D l
z Positive photoresist – becomes soluble in
basic devolper
z negative photoresist -becomes insoluble in
(organic) developer

5. Etching
z liquid ("wet") or plasma ("dry") chemical
agent removes the uppermost layer of the
substrate
 Optical Lithography 
(Shadow and Projection)

Lithography Shadow Projection

Advantages z Higher Resolution z Defect due to direct contact
z Low defect
o de ec z Expensive system
pe s e sys e
Di d
Disadvantages z Reduction ratio z Lower resolution

• s = the gap between the  • k1 = constant related to the resist
mask and photo resist
• NA = numerical aperture 
• d = photo resist thickness
• NA = nSina
• n= refractive index
• a = maximum cone angle
Optical Lithography 
(Projection)
Extreme Ultraviolet Lithography (EUV)
Extreme Ultraviolet Lithography (EUV)
z Using the 13.5 nm EUV wavelength 
z EUV lithography needs to take place in a vacuum
EUV lithography needs to take place in a vacuum 
z As refractive lenses absorbing UVR, reflecting mirrors are 
used
z The precision machining of the mirror is required.
 X‐Ray Lithography
Ray Lithography
z X‐ray with wavelengths in the range of 0.04 to 0.5 nm
z X‐ray mask made with an x‐ray absorbing materials on a thin x‐ray 
transparent membrane
z An x‐ray source with sufficient brightness to exposure the resist through 
the shadow mask (there is no x‐ray lens)
z Advantages: high resolution, low defect
z Disadvantages: Expensive, 1:1 mass:pattern ratio
 Nanosphere Lithography
Nanosphere Lithography
z Cleaning the substrate
z Drop Coat
z Drying 
z Laying gold particles (Ag) 
z Lift off
 E‐Beam Lithography
Beam Lithography
z Using scanning a beam of electrons
z E beam in a patterned fashion on a resist
E‐beam in a patterned fashion on a resist
z Then removing the unnecessary 
z Etching
z Advantages: overcomes the diffraction limits of light and make features in nm
Advantages: overcomes the diffraction limits of light and make features in nm
region
z Disadvantages: beam drift or instability which may occur during the exposure