5MV Tandem (Pelletron) Accelerator and its Applications

Dr. Aqeel Ahsan Khurram

Experimental Physics Labs

INTRODUCTION

Technical Specifications
Model Make Terminal Voltage Charging Ion sources Ion beams Beam lines Beam energy Beam current 5UDH-2 NEC, USA 5MV Pelletron charging system Two (SNICS and RF) H, He, C, Si, Ni, Cu, & Au Two (-15o and -30o) Up to 25MeV (depends on the charge state of the ion beam) Up to 200nA

Data acquisition system LINUX BASED COMPUTER CONTROLLED SYSTEM Data analysis software RUMP FOR RBS/ERDA SPECTRUM ANALYSIS GUPIX FOR X-RAY SPECTRUM ANALYSIS SIMNRA FOR NUCLEAR REACTION ANALYSIS Detection System Si surface barrier detector Resolution=11KeV Si(Li) detector Resolution=138eV NaI scintillator (-Ray detection) (X-ray detection) (Particle detection)

APPLICATION AREAS OF THE ACCELERATORS

Materials science Biology Solid State Physics Nano-technology Nuclear Physics Environmental Science Chemistry Archeology Geology
5

TECHNIQUES AVAILABLE

Rutherford Backscattering Spectrometry (RBS) Elastic Recoil Detection Analysis (ERDA) Particle Induced X-ray Emission (PIXE) Nuclear Reaction Analysis (NRA) Ion Beam Channeling

Rutherford Backscattering Spectrometry

Non-destructive multi-element compositional analysis independent of type of matrix. Quantitative measurements (atoms/cm2) without using any standard. Measuring low levels of Be to U in thin films to a depth of 3 microns. Absolute thickness of thin films, surface layers and coatings. Depth profiling of the elements. Surface/interface impurities and impurity distribution in depth. Quantitative dopant profiles in semiconductors.

Sensitivity: 10-3 at. Fraction for light elements & 10-5 for heavy elements Accuracy: <1% Stoichiometry & 4% thickness Depth resolution 10 nm Elemental composition of complex materials i.e. alloy films, oxides, ceramics, glassy carbon, etc. Low-Z element sensitivity

Elastic Recoil Detection Analysis

Non-destructive compositional analysis. Light elements on heavy substrates. Quantitative measurements. Frequently used for measuring low levels of Hydrogen in thin films and metals. H-U are detectable depending upon the type of incident particle. Elements heavier than hydrogen (Z<9) are detected with heavy ion beams.

Sensitivity:0.3% . Accuracy:10% for Hydrogen). Depth resolution 1-10nm. Accessible depth range is 1m.

10

Particle Induced X-ray Emission

Non-destructive, quantitative analysis of heavier elements. Identification of elements that RBS cannot resolve. Generally used for trace element analysis 1-100ppm. Identify high-Z elements (11<Z<92). Quantifying ratios of elements that cannot be resolved by RBS. Composition of Magnetic multilayers - storage media and head structures. Major applications include: aerosol analysis, pigment composition of paintings, studies of Polynesian artifacts, Materials science, Bio sciences and Medical applications.

Probed depth tens of m. Sensitivity up to 1ppm. Accuracy 10%. Higher signal to background ratio as compared to electron beam induced x-ray spectroscopy. Low velocities at PIXE energies as compared to electron, hence no bremsstrahlung. PIXE is 100 times more sensitive than EDX.

12

Nuclear Reaction Analysis

Measuring low levels of B, C, N, and O which are not visible in RBS spectrum due to huge background of heavy elements. Light element depth profiling (Z<15). Non-destructive compositional analysis. Isotope specific/tracing is easy. There is no natural background from high Z components of the target as in RBS. Quantitative measurements by calibration standards.

13

The yield of reaction products is proportional to the concentration of elements present in the sample. The depth profile is measured by stepping the energy of accelerator to produce reactions with narrow resonances. The absolute concentrations are determined with the help of standard samples. Probed depth is ~m with depth resolution 1-20nm. Accuracy is 10%.

EXAMPLES OF SOME NUCLEAR REACTIONS

15N(p,)12C

and 14N(p,)15O for 15N & 14N profiling at resonance energies 429 and 898 KeV respectively. 19F(p,)16O at resonances 340, 484, and 872KeV for fluorine profiling. 18O(p,)19F is used for oxygen profiling.

EXAMPLES

NRA of 500 Ti-O-N-C thin film on Si substrate using 1 MeV 1H2

RBS of 500 Ti-O-N-C thin film on Si substrate using 2.275 MeV He.

ION BEAM CHANNELING

DETECTOR Random yield

DETECTOR

Channeled yield

The channeling phenomena gives information about the crystal structure of single crystal and thin films. Types of Channeling RBS channeling PIXE channeling NRA channeling

The ratio of the aligned yield to random yield is called the minimum yield, min. Generally the yield is reduced by a factor of 100 from an aligned sample. For a crystal the min of 2-3 % shows high degree of crystallinity.

ION BEAM CHANNELING

Crystallographic analysis of thin films. Crystal damage/defect profiling; change of crystallinity with depth. Lattice location of dopants and point defects; XRD can not detect point defects but only the extended defects. Determination of percent amorphization and thickness of amorphized layers.

19

EXAMPLES

Channeling and random spectra from a MgO <1 0 0> single crystal S. Thevuthasan et. al NIMA 420, 81 (1999)

Randomand <0 00 1> aligned RBS spectra of GaN:Eras grown sample and samples implanted at 200 and 400 keV S.F. Song, Journal of Crystal Growth 265 (2004) 7882

Experimental Physics Labs

Data analysis lab Materials Science Lab Solid State Physics Lab Nuclear Physics Lab Nuclear Instrumentation Lab Health Physics Lab Electronic Lab Vacuum Lab Computer Applications Lab

THANK YOU ALL