FQP5N60C

FQP5N60C / FQPF5N60C N-Channel MOSFET
March 2013
N-Channel QFET MOSFET

600 V, 4.5 A, 2.5 Description
FQP5N60C / FQPF5N60C
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
4.5 A, 600 V, RDS(on) = 2.5 (Max) @VGS = 10 V, ID = 2.25 A Low Gate Charge (Typ. 15 nC) Low Crss (Typ. 6.5 pF) 100% Avalanche Tested
!
!
G! G DS
#
! !
"
TO-220
FQP Series
GD S
TO-220F
FQPF Series
Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
FQP5N60C 600 4.5 2.6 18
FQPF5N60C 4.5 * 2.6 * 18 * 30 210 4.5 10 4.5
Unit V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
100 0.8 -55 to +150 300
33 0.26
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP5N60C 1.25 0.5 62.5 FQPF5N60C 3.79 -62.5 Unit C/W C/W C/W
www.fairchildsemi.com
2003 Fairchild Semiconductor Corporation FQP5N60C / FQPF5N60C Rev. C0
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance
VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.25 A VDS = 40 V, ID = 2.25 A

(Note 4)
2.0 ---
-2.0 4.7
4.0 2.5 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---515 55 6.5 670 72 8.5 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 4.5A, VGS = 10 V
(Note 4, 5)
VDD = 300 V, ID = 4.5A, RG = 25

(Note 4, 5)
--------
10 42 38 46 15 2.5 6.6
30 90 85 100 19 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/s
(Note 4)
------
---300 2.2
4.5 18 1.4 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Typical Characteristics
10
ID, Drain Current [A]
10
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
150 C -55 C
10
0
25 C
10
-1
% Notes : 1. 250& s Pulse Test 2. TC = 25$
% Notes : 1. VDS = 40V 2. 250& s Pulse Test
10
-2
10
-1
-1
10
10
10
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
5
RDS(ON) [' ], Drain-Source On-Resistance
VGS = 10V
IDR, Reverse Drain Current [A]
10
VGS = 20V
1
% Note : TJ = 25$
150$ 25$
10
-1
% Notes : 1. VGS = 0V 2. 250& s Pulse Test
0 0 2 4 6 8 10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
800
10
VDS = 120V VDS = 300V
Ciss
VGS, Gate-Source Voltage [V]
VDS = 480V
Capacitance [pF]
600
Coss
400
% Notes ; 1. VGS = 0 V 2. f = 1 MHz
200
Crss
2
% Note : ID = 4.5A
0 -1 10
10
10
12
16
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
% Notes : 1. VGS = 10 V 2. ID = 2.25 A
0.9
% Notes : 1. VGS = 0 V 2. ID = 250 & A
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
Operation in This Area is Limited by R DS(on)
Operation in This Area is Limited by R DS(on)
10 s 100 s 1 ms
10
100 s 1 ms
10
10 ms 100 ms
10
0
DC
10
10 ms 100 ms DC
10
-1
% Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

o o
10
-1
% Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

o o
10
-2
10
10
10
10
10
-2
10
10
10
10
Figure 9-1. Maximum Safe Operating Area for FQP5N60C
Figure 9-2. Maximum Safe Operating Area for FQPF5N60C
0 25
50
75
100
125
150
TC, Case Temperature [$]
Figure 10. Maximum Drain Current vs Case Temperature

(Continued)
(t), T h e rm a l R e s p o n s e
10
D = 0 .5
0 .2 0 .1
10
-1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
% N o te s : 1 . Z ( JC( t ) = 1 . 2 5 $ / W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T J M - T C = P D M * Z ( JC( t )
JC
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP5N60C
( t) , T h e r m a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
% N o te s : 1 . Z ( J C ( t) = 3 .7 9 $ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z ( J C ( t)
10
-1
0 .0 2 0 .0 1
( JC
PDM
s i n g le p u ls e
10
-2
t1 t2
10
-3
10
-5
10
-4
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF5N60C
Gate Charge Test Circuit & Waveform
50K) 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg 10V Qgs Qgd
VGS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG DUT
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp
ID (t) VDS (t) Time
10V
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
dv/dt controlled by RG ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
I SD ( DUT )
IFM , Body Diode Forward Current di/dt
IRM
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
Mechanical Dimensions
TO - 220
Dimensions in Millimeters
Package Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10

(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 0.05 2.54TYP [2.54 0.20] 4.70 0.20

+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS Sync-Lock 2Cool F-PFS AccuPower * FRFET PowerTrench AX-CAP * SM BitSiC Global Power Resource PowerXS TinyBoost Green Bridge Build it Now Programmable Active Droop TinyBuck Green FPS CorePLUS QFET TinyCalc Green FPS e-Series QS CorePOWER TinyLogic CROSSVOLT Gmax Quiet Series TINYOPTO CTL GTO RapidConfigure TinyPower Current Transfer Logic IntelliMAX TinyPWM DEUXPEED ISOPLANAR TinyWire Dual Cool Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time TranSiC EcoSPARK and Better SignalWise TriFault Detect EfficentMax MegaBuck SmartMax TRUECURRENT* ESBC MICROCOUPLER SMART START SerDes MicroFET Solutions for Your Success MicroPak SPM STEALTH MicroPak2 Fairchild UHC SuperFET MillerDrive Fairchild Semiconductor Ultra FRFET SuperSOT-3 MotionMax FACT Quiet Series UniFET SuperSOT-6 mWSaver FACT VCX SuperSOT-8 OptoHiT FAST VisualMax SupreMOS OPTOLOGIC FastvCore VoltagePlus OPTOPLANAR SyncFET FETBench XS
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition
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Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I64

FQP5N60C

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FQP5N60C / FQPF5N60C N-Channel MOSFET

N-Channel QFET MOSFET

Absolute Maximum Ratings

TC = 25C unless otherwise noted

FQP5N60C 600 4.5 2.6 18

FQPF5N60C 4.5 * 2.6 * 18 * 30 210 4.5 10 4.5

Unit V A A A V mJ A mJ V/ns W W/C C C

100 0.8 -55 to +150 300

* Drain current limited by maximum junction temperature.

2003 Fairchild Semiconductor Corporation FQP5N60C / FQPF5N60C Rev. C0

FQP5N60C / FQPF5N60C N-Channel MOSFET

TC = 25C unless otherwise noted

VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.25 A VDS = 40 V, ID = 2.25 A

VDD = 300 V, ID = 4.5A, RG = 25

Drain-Source Diode Characteristics and Maximum Ratings

4.5 18 1.4 ---

2003 Fairchild Semiconductor Corporation FQP5N60C / FQPF5N60C Rev. C0

FQP5N60C / FQPF5N60C N-Channel MOSFET

ID, Drain Current [A]

ID, Drain Current [A]

% Notes : 1. 250& s Pulse Test 2. TC = 25$

% Notes : 1. VDS = 40V 2. 250& s Pulse Test

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

RDS(ON) [' ], Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

% Notes : 1. VGS = 0V 2. 250& s Pulse Test

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage

VDS = 120V VDS = 300V

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2003 Fairchild Semiconductor Corporation FQP5N60C / FQPF5N60C Rev. C0

FQP5N60C / FQPF5N60C N-Channel MOSFET

BV DSS , (Normalized) Drain-Source Breakdown Voltage

RDS(ON) , (Normalized) Drain-Source On-Resistance

% Notes : 1. VGS = 0 V 2. ID = 250 & A

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs Temperature

Figure 8. On-Resistance Variation vs Temperature

Operation in This Area is Limited by R DS(on)

Operation in This Area is Limited by R DS(on)

ID, Drain Current [A]

ID, Drain Current [A]

% Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

% Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

VDS, Drain-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area for FQP5N60C

Figure 9-2. Maximum Safe Operating Area for FQPF5N60C

ID, Drain Current [A]

TC, Case Temperature [$]

Figure 10. Maximum Drain Current vs Case Temperature

FQP5N60C / FQPF5N60C N-Channel MOSFET

% N o te s : 1 . Z ( JC( t ) = 1 . 2 5 $ / W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T J M - T C = P D M * Z ( JC( t )

Figure 11-1. Transient Thermal Response Curve for FQP5N60C