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Fast Recovery Epitaxial Diode (FRED)

DSEI 60 IFAVM = 60 A
VRRM = 1000 V = 35 ns trr
C

VRSM V 1000

VRRM V 1000

Type

TO-247 AD

DSEI 60-10A
C A C

Symbol I FRMS I FAVM  I FRM I FSM

Test Conditions TVJ = TVJM TC = 60C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45 C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

Maximum Ratings 100 60 800 500 540 450 480 1250 1200 1000 950 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm/lb.in. Nm/lb.in. g

A = Anode, C = Cathode

TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine i2 dt TVJ = 45 C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

Features International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meet UL 94V-0 Applications Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling

TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque with screw M3 Mounting torque with screw M3.5

189 0.45/4 0.55/5 6

Symbol

Test Conditions typ. TVJ = 25 C TVJ = 25 C TVJ = 125C IF = 60 A;

Characteristic Values max. 3 0.5 14 1.8 2.3 1.43 6.1 0.66 mA mA mA V V V m K/W K/W K/W ns A

IR

VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM TVJ = 150C TVJ = 25C

VF VT0 rT RthJC RthCK RthJA t rr I RM

For power-loss calculations only TVJ = TVJM 0.2

35 IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 540 V; IF = 60 A; -diF/dt = 480 A/s L 0.05 H; TVJ = 100 C 35 32 50 36

IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to DIN/IEC 747 IXYS reserves the right to change limits, test conditions and dimensions

96504A

1997 IXYS All rights reserved

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DSEI 60, 1000 V

Fig. 1 Forward current versus voltage drop.

Fig. 2 Recovery charge versus -diF /dt.

Fig. 3 Peak reverse current versus -diF/dt.

Fig. 4 Dynamic parameters versus junction temperature.

Fig. 5 Recovery time versus -diF/dt.

Fig. 6 Peak forward voltage versus -diF/dt.


Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102

Dimensions

Fig. 7 Transient thermal impedance junction to case.

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1997 IXYS All rights reserved