FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode

August 2005

FDFM2N111
Integrated N-Channel PowerTrench MOSFET and Schottky Diode
General Description
FDFM2N111 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low on-state resistance.

Applications
Standard Buck Converter

Features
4 A, 20 V RDS(ON) = 100m @ VGS = 4.5 V RDS(ON) = 150m @ VGS = 2.5 V Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm

PIN 1 A

S/C

G A
1 2 3 6 5 4

A S/C D

S/C G

A TOP MLP 3x3

S/C

BOTTOM

Absolute Maximum Ratings TA = 25C unless otherwise noted

Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation (Steady State) Power dissipation (Steady State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) (Note 1a) Ratings 20 12 4 10 20 2 1.7 0.8 -55 to +150 Units V V A V A W
o

Thermal Characteristics
RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 70 150
o

C/W

oC/W

Package Marking and Ordering Information

Device Marking 2N111 Device FDFM2N111 Reel Size 7inch
1

Tape Width 12mm

Quantity 3000 units

FDFM2N111 Rev. C2 (W)

2005 Fairchild Semiconductor Corporation

FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode

Electrical Characteristics TA = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, ID = 250A, VGS = 0V ID = 250A, Referenced to 25C VGS = 0V, VDS = 16V VGS = 12V, VDS = 0V 20 12 1 100 V mV/C A nA

On Characteristics (Note 2)
VGS(TH) VGS(TH) TJ RDS(ON) ID(ON) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250A ID = 250A, Referenced to 25C ID = 4.0A, VGS = 4.5V ID = 3.3A, VGS = 2.5V ID = 4.0A, VGS = 4.5V, TJ = 125C VGS = 2.5V, VDS = 5V ID = 4A, VDS = 5V 0.6 10 1.0 -3 54 83 74 9.7 1.5 100 150 147 A S m V mV/C

Dynamic Characteristics
CISS COSS CRSS RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz VGS = 0V, f = 1MHz, 273 63 37 1.6 pF pF pF

Switching Characteristics (Note 2)

td(ON) tr td(OFF) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10V, ID = 4.0A, VGS = 4.5V VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6 6 7 11 1.7 2.7 0.6 0.9 12 14 20 3.4 3.8 ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS = 1.4 A (Note 2) IF= 4.0A, dIF/dt=100A/s 0.8 11 3 1.4 -1.2 A V ns nC

Schottky Diode Characteristic

VR IR VF Reverse Voltage Reverse Leakage Forward Voltage IR = 1mA VR = 5V IF = 1A TJ = 25C TJ = 100C TJ = 25C 20 0.32 100 10 0.39 V A mA V

FDFM2N111 Rev. C2 (W)

FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode

Electrical Characteristics TA = 25C unless otherwise noted

Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RCA is guaranteed by design while RCA is determined by the user's board design.

a) 70oC/W when mounted on a 1in2 pad of 2 oz copper

b) 150oC/W whe mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper

2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

FDFM2N111 Rev. C2 (W)

FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode

Typical Characteristics
10

ID, DRAIN CURRENT (A)

3.5V

2.5V

RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

VGS = 4.5V

2
3.0V

1.8 VGS = 2.5V 1.6 1.4 1.2 1 0.8 3.0V 3.5V 4.0V 4.5V

4
2.0V

0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V)

10

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage

1.6
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)

0.2

ID = 4A VGS = 4.5V 1.4

ID = 2A 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 TA = 25oC

1.2

TA = 125oC

0.8

0.6 -50

-25

25

50

75

100

125

150

1.5

2.5

3.5

4.5

TJ, JUNCTION TEMPERATURE (oC)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature

Figure 4. On-Resistance Variation with Gate-to-Source Voltage

10 TA = -55oC 25oC 125oC 6

100
-IS, REVERSE DRAIN CURRENT (A)
VDS = 5V

ID, DRAIN CURRENT (A)

10 1 0.1 0.01 0.001 0.0001

VGS = 0V TA = 125oC 25oC -55oC

0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature

FDFM2N111 Rev. C2 (W)

FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode

Typical Characteristics
6 VGS, GATE-SOURCE VOLTAGE (V) ID = 4A 5 4 3 2 1 0 0 1 2 Qg, GATE CHARGE (nC) 3 4 VDS = 5V 15V
CAPACITANCE (pF) 400

10V

350 300 250 200 150 100 50 0 0 4 8 12 16

Crss Coss Ciss

f = 1MHz VGS = 0 V

20

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

IF, FORWARD LEAKAGE CURRENT (A)

IR, REVERSE LEAKAGE CURRENT (A)

10 TJ = 125oC

0.1 TJ = 125 C 0.01

o

TJ = 25 C 0.1

0.001

TJ = 100 C

0.0001
o

0.01

0.00001

TJ = 25 C

0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V)

0.000001 0 5 10 15 20 VR, REVERSE VOLTAGE (V)

Figure 9. Schottky Diode Forward Voltage

Figure 10. Schottky Diode Reverse Current

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

Figure 11. Transient Thermal Response Curve

FDFM2N111 Rev. C2(W)

FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode

FDFM2N111 Rev. C2 (W)

FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode

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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

FDFM2N111 Rev. C2 (W)

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