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FDD4243 40V P-Channel PowerTrench MOSFET

FDD4243 40V P-Channel PowerTrench MOSFET


-40V, -14A, 44m Features General Description
Max rDS(on) = 44m at VGS = -10V, ID = -6.7A Max rDS(on) = 64m at VGS = -4.5V, ID = -5.5A High performance trench technology for extremely low rDS(on) RoHS Compliant

November 2007

This P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

Application
Inverter Power Supplies

G S

D -PA K TO -2 52 (TO -252)

MOSFET Maximum Ratings TC = 25C unless otherwise noted


Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25C (Note 1a) (Note 3) TC= 25C TC= 25C TA= 25C (Note 1) (Note 1a) Ratings -40 20 -14 -24 -6.7 -60 84 42 3 -55 to +150 mJ W C A Units V V

Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.0 40 C/W

Package Marking and Ordering Information


Device Marking FDD4243 Device FDD4243 Package D-PAK(TO-252) Reel Size 13 Tape Width 12mm Quantity 2500 units

2007 Fairchild Semiconductor Corporation FDD4243 Rev.C1

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FDD4243 40V P-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25C unless otherwise noted


Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -32V, VGS = 0V TJ = 125C VGS = 20V, VGS = 0V -40 -32 -1 -100 100 V mV/C A nA

On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -6.7A VGS = -4.5V, ID = -5.5A VGS = -10V, ID = -6.7A, TJ = 125C VDS = -5V, ID = -6.7A -1.4 -1.6 4.7 36 48 53 16 44 64 69 S m -3.0 V mV/C

Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 1165 165 90 4 1550 220 135 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain Miller Charge VDD = -20V, ID = -6.7A VGS = -10V VDD = -20V, ID = -6.7A VGS = -10V, RGEN = 6 6 15 22 7 21 3.4 4 12 26 35 14 29 ns ns ns ns nC nC nC

Drain-Source Diode Characteristics


VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -6.7A (Note 2) 0.86 29 30 1.2 43 44 V ns nC IF = -6.7A, di/dt = 100A/s

Notes: 1: RJA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJC is determined by the users board design. a. 40C/W when mounted on a 1 in2 pad of 2 oz copper b. 96C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V.

FDD4243 Rev.C1

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FDD4243 40V P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted


60
-ID, DRAIN CURRENT (A)

3.5
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.0V

50 40 30 20 10 0 0

VGS = -10V VGS = - 6V VGS = -5V

3.0 2.5 2.0 1.5 1.0 0.5

VGS = -4.5V VGS = -4V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = - 3.0V

VGS = -4V VGS = -4.5V VGS = -5V VGS = -6V

VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX

1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V)

10

20 30 40 -ID, DRAIN CURRENT(A)

50

60

Figure 1. On Region Characteristics

Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage


120
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m)

NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50


ID = -6.7A VGS = -10V

ID = -6.7A

100 80 60

PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX

TJ = 125oC

TJ = 25oC

40 20

-25

0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC)

150

3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 3. Normalized On Resistance vs Junction Temperature


-IS, REVERSE DRAIN CURRENT (A)

Figure 4. On-Resistance vs Gate to Source Voltage


30
VGS = 0V

60 50 40 30 20 10 0 1
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX

-ID, DRAIN CURRENT (A)

10
TJ = 150oC TJ = 25oC

TJ = 150oC TJ = 25oC TJ = -55oC

1
TJ = -55oC

2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V)

0.1 0.4

0.6

0.8

1.0

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward Voltage vs Source Current

FDD4243 Rev.C1

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FDD4243 40V P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted


-VGS, GATE TO SOURCE VOLTAGE(V)

10
ID = -6.7A

3000
VDD = -10V

8 6 4 2 0

CAPACITANCE (pF)

1000

Ciss

VDD = -20V VDD = -30V

Coss

100
50 0.1

f = 1MHz VGS = 0V

Crss

12

16

20

24

Qg, GATE CHARGE(nC)

1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V)

30

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain to Source Voltage


25 -ID, DRAIN CURRENT (A) 20 15 10 5
RJC = 3.0 C/W
o

10
-IAS, AVALANCHE CURRENT(A)

8 6 4
TJ = 25oC

VGS = -10V

Limited by Package VGS = -4.5V

TJ = 125oC

1 0.01

0.1 1 tAV, TIME IN AVALANCHE(ms)

10

30

0 25

50

75

100

125
o

150

TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Switching Capability


P(PK), PEAK TRANSIENT POWER (W)

Figure 10. Maximum Continuous Drain Current vs Case Temperature


10000
FOR TEMPERATURES

100
-ID, DRAIN CURRENT (A)

100us

VGS = -10V

ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 TC --------------------125 TC = 25oC

10

1000

I = I25

1ms

1
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)
SINGLE PULSE TJ = MAX RATED TC = 25OC

10ms
100ms

100
SINGLE PULSE

0.1 0.5

10

100

30 -5 10

10

-4

-VDS, DRAIN to SOURCE VOLTAGE (V)

10 10 10 t, PULSE WIDTH (s)

-3

-2

-1

10

10

Figure 11. Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power Dissipation

FDD4243 Rev.C1

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FDD4243 40V P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted


2

1
NORMALIZED THERMAL IMPEDANCE, ZJC

DUTY CYCLE-DESCENDING ORDER

0.1

D = 0.5 0.2 0.1 0.05 0.02 0.01

PDM

t1 t2

0.01
SINGLE PULSE

NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC

0.003

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

FDD4243 Rev.C1

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FDD4243 40V P-Channel PowerTrench MOSFET

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

tm
Rev. I31

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
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No Identification Needed

Full Production

Obsolete

Not In Production

FDD4243 Rev.C1