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60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172.
Features
60A, 600V, TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG30N60B3D PACKAGE TO-247 BRAND G30N60B3D
Symbol
C
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000
HGTG30N60B3D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied HGTG30N60B3D Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 600 60 30 25 220 20 30 60A at 600V 208 1.67 -55 to 150 260 4 10 UNITS V A A A A V V W W/oC oC oC s s
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 3.
Electrical Specications
PARAMETER
TC = 25oC, Unless Otherwise Specied SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3 VCE (PK) = 480V VCE (PK) = 600V 200 60 TYP 1.45 1.7 5 7.2 170 230 36 25 137 58 550 680 MAX 250 3 1.9 2.1 6 250 190 250 800 900 UNITS V A mA V V V nA A A V nC nC ns ns ns ns J J
VCE(SAT)
IC = IC110 , VGE = 15V IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 3, VGE = 15V L = 100H
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA
VGEP QG(ON)
IC = IC110, VCE = 0.5 BVCES IC = IC110 , VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3)
IGBT and Diode at TJ = 25oC, ICE = IC110 , VCE = 0.8 BVCES , VGE = 15V, RG = 3 , L = 1mH, Test Circuit (Figure 19)
HGTG30N60B3D
Electrical Specications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specied (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 30A IEC = 1A, dIEC/dt = 200A/s IEC = 30A, dIEC/dt = 200A/s Thermal Resistance Junction To Case RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode at TJ = 150oC, ICE = IC110 , VCE = 0.8 BVCES , VGE = 15V, RG = 3 , L = 1mH, Test Circuit (Figure 19) MIN TYP 32 24 275 90 1300 1600 1.95 32 45 MAX 320 150 1550 1900 2.5 40 55 0.6 1.3 UNITS ns ns ns ns J J V ns ns
oC/W oC/W
VGE = 15V
50
75
100
125
150
10
TC f = 0.05 / (td(OFF)I + td(ON)I) 1 MAX1 75oC fMAX2 = (PD - PC) / (EON + EOFF) 75oC PC = CONDUCTION DISSIPATION 110oC (DUTY FACTOR = 50%) 110oC RJC = 0.6oC/W, SEE NOTES 0.1 20 5 10
tSC
225
DUTY CYCLE <0.5%, VGE = 10V 200 PULSE DURATION = 250s 175 150 125 100 75 50 25 0 0 2 4 6 8 10 TC = 25oC TC = -55oC TC = 150oC
TC = -55oC TC = 150oC
TC = 25oC 50 0
100
50
0 10
20
30
40
50
60
120
250 TJ = 150oC, VGE = 10V, VGE = 15V TJ = 25oC, VGE = 10V, VGE = 15V 200
100
80
150
60
100
10
20
30
40
50
60
40 10
20
30
40
50
60
300
16 14 12
VCE = 600V 10 8 6 VCE = 200V 4 VCE = 400V 2 0 0 50 100 QG , GATE CHARGE (nC) 150 200
TC = 25oC TC = 150oC
10
11
C, CAPACITANCE (nF)
4 COES CRES 0 0 5 10 15 20 25
100 0.50
0.20 10-1 0.10 0.05 0.02 0.01 10-2 10-5 DUTY FACTOR, D = t1 / t2 SINGLE PULSE 10-4 10-3 10-2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 100 PD t2 101 t1
50
40
trr
30
ta
20
tb
10
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 2 5 10 20 30 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A)
fMAX1 is dened by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). 1. Prior to assembly into a circuit, all leads should be kept Deadtime (the denominator) has been arbitrarily held to 10% shorted together either by the use of metal shorting springs of the on-state time for a 50% duty factor. Other denitions or by the insertion into conductive material such as are possible. td(OFF)I and td(ON)I are dened in Figure 20. ECCOSORBD LD26 or equivalent. Device turn-off delay can establish an additional frequency 2. When devices are removed by hand from their carriers, the limiting condition for an application other than TJM. td(OFF)I hand being used should be grounded by any suitable is important when controlling output ripple under a lightly means - for example, with a metallic wristband. loaded condition. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The circuits with power on. allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. 5. Gate Voltage Rating - Never exceed the gate-voltage rating The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the of VGEM . Exceeding the rated VGE can result in permanent conduction losses (PC) are approximated by PC = (VCE x ICE)/2. damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are EON and EOFF are dened in the switching waveforms essentially capacitors. Circuits that leave the gate shown in Figure 20. EON is the integral of the instantaneous open-circuited or floating should be avoided. These power loss (ICE x VCE) during turn-on and EOFF is the conditions can result in turn-on of the device due to voltage integral of the instantaneous power loss (ICE x VCE) during buildup on the input capacitor due to leakage currents or turn-off. All tail losses are included in the calculation for pickup. E ; i.e., the collector current equals zero (ICE = 0). OFF 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certication.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
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